MCD21 Search Results
MCD21 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MCD212 | Motorola | Video Decoder and System Controller(with JTAG) | Original | 881.67KB | 87 |
MCD21 Price and Stock
Carling Technologies VVCMCD2-100V-SERIES ROCKER SWITCH |
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VVCMCD2-100 |
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VVCMCD2-100 | Bulk | 8 Weeks | 100 |
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VVCMCD2-100 | 1 |
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Omega Engineering FT-PMCD21-04- Bulk (Alt: FT-PMCD21-04) |
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FT-PMCD21-04 | Bulk | 25 |
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FT-PMCD21-04 | Bulk | 1 |
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Omega Engineering FT-MCD21-04- Bulk (Alt: FT-MCD21-04) |
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FT-MCD21-04 | Bulk | 10 |
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Omega Engineering FT-MCD21-025- Bulk (Alt: FT-MCD21-025) |
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FT-MCD21-025 | Bulk | 12 Weeks | 10 |
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Omega Engineering FT-PMCD21-04-12- Bulk (Alt: FT-PMCD21-04-12) |
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FT-PMCD21-04-12 | Bulk | 7 Weeks | 25 |
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FT-PMCD21-04-12 | Bulk | 1 |
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MCD21 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MCD214
Abstract: 4116 Dram MCD211 MCD270 1/DRAM 4116
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OCR Scan |
cd214mcd214mcd214/d680x0+4 | |
RGB555
Abstract: 138G211 68070 h3bf MCD212 MD11
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Original |
mcd212mcd212/drgb555138g211+3 | |
MCD270
Abstract: MCD251 4116 Dram MCD212
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OCR Scan |
mcd212mcd212/dmcd211mcd214+3 | |
13006 TRANSISTOR
Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
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Original |
pmbfj620ot363msc89513006 transistor+6 | |
PMBFJ620,115Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken |
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pmbfj620ot363pmbfj620,115 | |
pmbfj310Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION |
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pmbfj308pmbfj309pmbfj310 | |
MCD270
Abstract: MCD211 MC44200 multi channel MPEG decoder
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OCR Scan |
cd270mcd270mcd270/dmc68000+5 | |
DR12
Abstract: DR14 MC68341 MCD251FU MCD251
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Original |
mcd251mcd251/dmk145bpmcd251ts/d+4 | |
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Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections |
OCR Scan |
j308/309/310-to-92mcd212bbs3831 | |
J310
Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
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j310j309 application notej308j310 applications+4 | |
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Contextual Info: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and |
OCR Scan |
002405tfj308/309/310ubb114-pmbfj308+4 | |
PMBFJ620Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken |
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pmbfj620ot363771-pmbfj620-t/r | |
ASTEC RF modulator um1233
Abstract: ASTEC um1233 um1233 ASTEC RF modulator mcm54400az PAL16LB MC44200 ASTEC RF modulator um1233 data sheet CSR1T RCA 8 way video splitter circuit diagram
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an492/dan4921d88tannersastec rf modulator um1233+9 | |
UC3843 spice model
Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
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br101/decl300uc3843 spice modelproject on water level control using ic 7400+8 | |
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Contextual Info: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability. |
OCR Scan |
blv13bbs3131mcd211 | |
UCD224
Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
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OCR Scan |
fj308/309/310pmbfj308pmbfj309pmbfj310+6 | |
ze 65 s encoder
Abstract: MCD251 D13CM MC44200 mcd221
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OCR Scan |
mcd251mcd251/dmcd211ze 65 s encoder+3 | |
marking code 10 sot23
Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2
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pmbfj308pmbfj309pmbfj310marking code 10 sot23+3 | |
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Contextual Info: 11 ELECTR ICA L SPECIFICATION 11.1 ABSOLUTE M AXIMUM RATINGS Parameter Symbol Min Max Unit Vd D - 0 .5 + 7.0 V Input Voltage V| - 1 .5 VDD + 1-5 V Output Voltage Vo - 0 .5 V q d + 0.5 V Output Current 'o - ±25 mA Power Dissipation Pd — 1200 mW Topr + 70 |
OCR Scan |
mcd212 | |
BFU309Contextual Info: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections |
OCR Scan |
bfu308/309/310msb032mbb114pinning-to-18+3 | |
pmbfj310
Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2
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Original |
pmbfj308pmbfj309pmbfj310msc895+2 | |