MC 340 TRANSISTOR Search Results

965 transistor

Abstract: MC 340 transistor D965
Contextual Info: MC C TO-92 Piastic-Encapsulate Transistors D 965 TRANSISTOR NPN F E A T U R E S P cm ; 0 .7 5 W (Tam b = 25T C ) \• Icm : 5 A V(BR)CBO: 42 V tlon tem perature range Tj.Tsig: -551C to + 15 0 t : E L E C T R I C A L C H A R A C T E R I S T I C S (Tam b=25°C u n le s s o th e rw is e

MC 340 transistor

Abstract: D25A 2SK1251
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance : RDS(0N)= 0.15Q (Typ.)

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

IRFP450FI

Abstract: GC507 7W53 GC508 IRFP450 C18070 IRFW450 IRFP450F
Contextual Info: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O

K2837

Abstract: toshiba k2837 transistor 2SK2837 2SK2837 SC-65
Contextual Info: TOSHIBA 2SK2837 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2837 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 MAX. 03.2 ± 0 .2

BSP320

Contextual Info: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

12vdc motor forward reverse control diagram

Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
Contextual Info: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,

CIMR-G7C4090

Abstract: CIMR-G7C4055
Contextual Info: Y203-EN2-02-Katalog.book Seite 249 Mittwoch, 24. Mai 2006 2:22 14 CIMR-G7C Varispeed G7 World first three level inverter architecture • • • • • • • • • • • • • • 3 level control 400 V class Current vector control and V/F with or without PG

2N389

Abstract: 2N424 l73a AAZ marking
Contextual Info: i c | 00001B5 HIL SPECS DOOltjfll b | MIL-S-1950 0 /17 3 A 24 November 1964-_ SUPERSEDING MIL-S-19500/1 7 3 NAVY 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 AND 2N424 This specification Is mandatory for use by all Departments and

irf614

Abstract: irf615 diode c226 diode c225
Contextual Info: H E D I 4 A S 5 4 55 QQ0Ö474 4 | INTERNATIONAL Data Sheet No. PD-9.475A T~ S R ECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRF614 IRFG15 N-CHANNEL 250 Volt, 2.0 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec­

2N43a

Abstract: 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 1999. INCH-POUND MIL-PRF-19500/6C 1 March 1999 SUPERSEDING MIL-S-19500/6B 28 December 1971 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,

P-8CM

Abstract: IC P605 8 pin DIODE P31A "triac protection" overcurrent MOV surge protection circuit diagram p31b DIODE P31B Teccor P0080SC MC marking code diode s4 do-214 P3100EB
Contextual Info: Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: techsalessidactor@littelfuse.com A Littelfuse company Teccor Electronics is the proprietor of the SIDACtor , Battrax®, and TeleLink®

MC340 transistor

Abstract: MC340 MC34004 MC33004 MC35004 MC35004B "Bandpass Filter" 50 hz
Contextual Info: MC33004/A/B MC34004/A/B MC35004/A/B GENERAL PURPOSE QUAD J-FET OPERATIONAL AMPLIFIERS . . . . . LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J–FET INPUT

2N1016B

Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Contextual Info: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­

K1496

Abstract: 2SK1495 K1495 2SK1496 2SK149 1496-Z tea 1037 2SK1495-Z 2SK1496-Z K1494
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2SK1495,2SK1495-Z/2SK1496,2SK1496-Z SWITCHING

CIMRF7Z4011

Contextual Info: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen

Contextual Info: Provisional Data Sheet No. PD - 9.1716 In t e r n a t io n a l IOR Rectifier ir f e 913o dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:MIL-PRF-19500/564] R EPETITIVE AVALANCHE AND -100Volt,0.30Q , HEXFET T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

CIMR-F7Z40151

Contextual Info: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control

2N297A JAN

Abstract: germanium transistor pnp 2n297a 2N297A transistor marking 3-020 3036
Contextual Info: M IL -S-19500/36C {j March 1967 SUPEH5EDÏNU M IL -S -19500,/36B 15 A pril 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, HIGH-POWER TVTiP QVT4n | 1 1• i r e «iì«9 — iB 1irn. T h is sp ecifica tio n Is mandatory for u se by a ll D epart­

IRF340

Abstract: IRF341 IRF342 IRF343 RC9S
Contextual Info: Standard Power MOSFETs- IRF340, IRF341, IRF342, IRF343 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8 A and 10 A, 350 V - 400 V rDscom = 0.55 O and 0.8 O

2N7380

Contextual Info: Preliminary Data Sheet No. PD - 9.1274C International TOR Rectifier IRHY7130CM IRHY8130CM JANSR2N7380 JANSH2N7380 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/614] N -C H A N N E L HEXFET TRANSISTOR MEGA RAD HARD 10OVolt, 0.18Q, MEGA RAD HARD HEXFET

2n5401ub

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 February 2013. INCH-POUND MIL-PRF-19500/766 26 November 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER,