MC 340 TRANSISTOR Search Results

BUZ21

Abstract: sis8
Contextual Info: SIEM ENS BUZ 21 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vps A ^DS on) Package 1> Ordering Code BUZ 21 100 V 21 A 0.085 £2 TO -220 AB C67078-S1308-A2 M axim um Ratings Param eter Continuous drain current, Tc = 25 'C

BUZ21

Contextual Info: SIEMENS BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 21 Vbs 100 V b ^DSiort Package Ordering Code 21 A 0.085 Q TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current h Values

965 transistor

Abstract: MC 340 transistor D965
Contextual Info: MC C TO-92 Piastic-Encapsulate Transistors D 965 TRANSISTOR NPN F E A T U R E S P cm ; 0 .7 5 W (Tam b = 25T C ) \• Icm : 5 A V(BR)CBO: 42 V tlon tem perature range Tj.Tsig: -551C to + 15 0 t : E L E C T R I C A L C H A R A C T E R I S T I C S (Tam b=25°C u n le s s o th e rw is e

TRS601

Contextual Info: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors

MC 340 transistor

Abstract: D25A 2SK1251
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance : RDS(0N)= 0.15Q (Typ.)

T1IS

Abstract: 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-3204S TRS-3604S TRS-4014S TRS-4404S TRS-5204S
Contextual Info: 3869720 GENERAL'DIODE CORP GENERAL DIODE CORP 07C 00251 D -7”- 3 3 t£ / Dif| 3 0 ^ 7 8 0 DD0D551 5 07 SILICON NPN* Power Transistors TYPE NO. TRS-3204S tc MAX. COLL. OISS. HI Fit« Ah #25*C P« rc/D M U ) MAX. THERMAL RES. Janetion lo C t u I7.S ABSOLUT :MAX. RATINGS #2S* C.

MC 340 transistor

Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
Contextual Info: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

Contextual Info: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 40 B N channel Enhancem ent mode Avalanche-rated Type ^DS 1D ^DS on Package 1) O rdering Code BUZ 40 B 500 V 8.5 A 0.8 a TO-220 AB C67078-S1305-A4 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 35 'C

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2

Contextual Info: SIEMENS BUZ 61 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 61 A Vds 400 V b 11 A Abs on 0.5 0 Package Ordering Code TO-220AB C67078-S1341 -A3 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: SIEMENS BUZ 92 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 92 Vds 600 V b 3.3 A ffDS on 3 fì Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Symbol Parameter Continuous drain current Values Unit

transistor 372

Contextual Info: SIEMENS BSP 372 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = °-8 - 2 0 v Type lD ^DS(on) Package Marking 1.7 A 0.31 Q SOT-223 BSP 372 BSP 372 Vds 100 V Type BSP 372 Ordering Code Q 67000-S300

Contextual Info: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Vbs 500 V hi 9.5 A % S on Package Ordering Code 0.6 n TO-218AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

t 326 Transistor

Abstract: transistor TE 901 BUZ 14
Contextual Info: SIEMENS BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 326 Yds 400 V Id 10.5 A RoSlon 0.5 a Package Ordering Code TO-218AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Yds 500 V k> ^DS on Package Ordering Code 9.5 A 0.6 n TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

19Sg

Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Contextual Info: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.

transistor buz 311

Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx
Contextual Info: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 40 B Vds 500 V Id 8.5 A flDS on 0.8 n Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIEMENS BUZ 61 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 61 Vbs 400 V b 12.5 A ffDS on Package Ordering Code 0.4 £2 TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

IRFP450FI

Abstract: GC507 7W53 GC508 IRFP450 C18070 IRFW450 IRFP450F
Contextual Info: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O

DF 331 TRANSISTOR

Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

DF 331 TRANSISTOR

Abstract: transistor df 331
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values

2N539

Abstract: 2N539A mil-std-750 3076 Germanium power
Contextual Info: M IL -S-19500/38C 10 January 1969 SUPERSEDING MIL- S -19500/38B 31 January 1962 See 6 .3 . MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER T V P R S 9.NR3Q A N n 2N 5SQ A This specification is mandatory for use by all Depart­