SIS8 Search Results
SIS8 Datasheets (37)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIS811 | Xinwang Electronics | SMT Power Inductor | Original | 406.59KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS822DNT-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 12A POWERPAK1212 | Original | 203.43KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS83 | Xinwang Electronics | SMT Power Inductor | Original | 301.13KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85 | Unknown | SMT Power Inductor | Original | 305.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85 | Xinwang Electronics | SMT Power Inductor | Original | 302.4KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-100 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-101 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-102 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-150 | Unknown | SMT Power Inductor | Original | 305.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-151 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-1R0 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-1R5 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-220 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-221 | Unknown | SMT Power Inductor | Original | 305.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIS85-2R2 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-330 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-331 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-3R3 | Unknown | SMT Power Inductor | Original | 305.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-470 | Unknown | SMT Power Inductor | Original | 305.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS85-471 | Unknown | SMT Power Inductor | Original | 305.71KB | 1 |
SIS8 Price and Stock
Vishay Siliconix SIS892ADN-T1-GE3MOSFET N-CH 100V 28A PPAK1212-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS892ADN-T1-GE3 | Cut Tape | 9,259 | 1 |
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SIS892ADN-T1-GE3 | 2 |
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SIS892ADN-T1-GE3 | 6,000 | 1 |
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Vishay Siliconix SIS890ADN-T1-GE3MOSFET N-CH 100V 7.6A/24.7A PPAK |
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SIS890ADN-T1-GE3 | Digi-Reel | 8,301 | 1 |
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SIS890ADN-T1-GE3 | 27,000 | 1 |
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Vishay Siliconix SIS888DN-T1-GE3MOSFET N-CH 150V 20.2A PPAK |
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SIS888DN-T1-GE3 | Digi-Reel | 7,062 | 1 |
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SIS888DN-T1-GE3 | 6,000 | 1 |
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Vishay Siliconix SIS822DNT-T1-GE3MOSFET N-CH 30V 12A PPAK1212-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS822DNT-T1-GE3 | Cut Tape | 6,000 | 1 |
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Vishay Siliconix SIS862DN-T1-GE3MOSFET N-CH 60V 40A PPAK1212-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS862DN-T1-GE3 | Cut Tape | 4,365 | 1 |
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SIS862DN-T1-GE3 | 3,000 | 1 |
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SIS8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss |
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SiS888DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
inductor 221
Abstract: SIS811
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SIS811 100KHz, SIS811-331 SIS811-471 SIS811-102 SIS811-681 SIS811-220 SIS811-330 1000uH -20oC inductor 221 | |
Contextual Info: SPICE Device Model SiS890DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SiS888DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS822DNT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiS822DNT AN609, 4429u 9523u 6061m 9816m 9565m 5122m 6905m 29-Apr-14 | |
Contextual Info: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiS862DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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SiS892DN 2002/95/EC SiS892DN-T1-GE3 18-Jul-08 | |
10uH inductor
Abstract: SIS811
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SIS811 SIS811-100 SIS811-H) SIS811-680 SIS811-101 SIS811-151 SIS811-221 SIS811-331 SIS811-471 SIS811-681 10uH inductor | |
P54C
Abstract: SiS85C503 SiS85C501 SiS85C502 SiS+85C503
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OCR Scan |
Pentium/P54C 85C501/502/503 SiS85C501 SiS85C502 SiS85C503 85C502, 85C503 P54C SiS+85C503 | |
S1209
Abstract: SiS890DN
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SiS890DN SiS890DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1209 | |
SiS892ADNContextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
p54c
Abstract: SiS 85C503 85c501 3-8 decoder 74138 pin diagram 3-8 decoder 74138 85c503 9ROM SiS85C501 SiS chipset T54B
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Pentium/P54C 85C501/502/503 SiS85C501 SiS85C502 SiS85C503 85C502, 85C503 p54c SiS 85C503 85c501 3-8 decoder 74138 pin diagram 3-8 decoder 74138 9ROM SiS chipset T54B | |
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Contextual Info: SiS862DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () (Max.) ID (A)f 0.0085 at VGS = 10 V 40g 0.0105 at VGS = 6.0 V 40g 0.0125 at VGS = 4.5 V 40g • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm |
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SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIS83Contextual Info: SMT Power Inductor SIS83 Type Features • ■ ■ ■ ■ ■ Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, |
OCR Scan |
SIS83 SIS83-100 SIS83-150 SIS83-220 SIS83-330 SIS83-470 SIS83-680 SIS83-101 SIS83-151 | |
Contextual Info: SPICE Device Model SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SiS822DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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SiS892DN 2002/95/EC SiS892DN-T1-GE3 11-Mar-11 | |
SIS83Contextual Info: SMT Power Inductor SIS83 Type Features Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, |
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SIS83 100KHz, Is471 SIS83-221 SIS83-331 SIS83-471 SIS83-681 SIS83-102 1000uH -20oC | |
SIS811Contextual Info: SMT Power Inductor SIS811 Type Features • High current 3.5A, 10uH type. ■ Unshielded. ■ Self-leads .suitable fo r high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter, DC-AC Inverters |
OCR Scan |
SIS811 SIS811-100 SIS811-150 SIS811-220 SIS811-330 SIS811-470 SIS811-680 SIS811-101 | |
Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm |
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SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm |
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SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS888DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiS888DN AN609, 0033m 8804u 0137m 3078m 3392m 8067m 5000m 15-Sep-14 | |
SIS85
Abstract: SIS85-100 SIS85-150 SIS85-1R0 SIS85-1R5 SIS85-220 SIS85-2R2 SIS85-330 SIS85-3R3 SIS85-4R7
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SIS85 SIS85-680 SIS85-101 SIS85-151 SIS85-221 SIS85-331 SIS85-471 SIS85-681 SIS85-102 1000uH SIS85-100 SIS85-150 SIS85-1R0 SIS85-1R5 SIS85-220 SIS85-2R2 SIS85-330 SIS85-3R3 SIS85-4R7 |