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    SIS8 Search Results

    SIS8 Datasheets (37)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS811
    Xinwang Electronics SMT Power Inductor Original PDF 406.59KB 1
    SIS822DNT-T1-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 12A POWERPAK1212 Original PDF 203.43KB
    SIS83
    Xinwang Electronics SMT Power Inductor Original PDF 301.13KB 1
    SIS85
    Unknown SMT Power Inductor Original PDF 305.71KB 1
    SIS85
    Xinwang Electronics SMT Power Inductor Original PDF 302.4KB 1
    SIS85-100
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-101
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-102
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-150
    Unknown SMT Power Inductor Original PDF 305.69KB 1
    SIS85-151
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-1R0
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-1R5
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-220
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-221
    Unknown SMT Power Inductor Original PDF 305.71KB 1
    SIS85-2R2
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-330
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-331
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-3R3
    Unknown SMT Power Inductor Original PDF 305.7KB 1
    SIS85-470
    Unknown SMT Power Inductor Original PDF 305.71KB 1
    SIS85-471
    Unknown SMT Power Inductor Original PDF 305.71KB 1
    SF Impression Pixel

    SIS8 Price and Stock

    Vishay Siliconix

    Vishay Siliconix SIS892ADN-T1-GE3

    MOSFET N-CH 100V 28A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIS892ADN-T1-GE3 Cut Tape 9,259 1
    • 1 $1.25
    • 10 $0.88
    • 100 $0.68
    • 1000 $0.49
    • 10000 $0.49
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    SIS892ADN-T1-GE3 Digi-Reel 9,259 1
    • 1 $1.25
    • 10 $0.88
    • 100 $0.68
    • 1000 $0.49
    • 10000 $0.49
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    SIS892ADN-T1-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.39
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    Component Electronics, Inc SIS892ADN-T1-GE3 2
    • 1 $1.54
    • 10 $1.54
    • 100 $1.15
    • 1000 $1.00
    • 10000 $1.00
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    New Advantage Corporation SIS892ADN-T1-GE3 6,000 1
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    Vishay Siliconix SIS890ADN-T1-GE3

    MOSFET N-CH 100V 7.6A/24.7A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIS890ADN-T1-GE3 Digi-Reel 8,301 1
    • 1 $1.20
    • 10 $0.80
    • 100 $0.55
    • 1000 $0.40
    • 10000 $0.40
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    SIS890ADN-T1-GE3 Cut Tape 8,301 1
    • 1 $1.20
    • 10 $0.80
    • 100 $0.55
    • 1000 $0.40
    • 10000 $0.40
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    SIS890ADN-T1-GE3 Reel 8,200 3,000
    • 1 -
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    • 10000 $0.32
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    New Advantage Corporation SIS890ADN-T1-GE3 27,000 1
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    • 10000 $0.53
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    Vishay Siliconix SIS888DN-T1-GE3

    MOSFET N-CH 150V 20.2A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIS888DN-T1-GE3 Digi-Reel 7,062 1
    • 1 $2.18
    • 10 $1.40
    • 100 $0.97
    • 1000 $0.72
    • 10000 $0.72
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    SIS888DN-T1-GE3 Cut Tape 7,062 1
    • 1 $2.18
    • 10 $1.40
    • 100 $0.97
    • 1000 $0.72
    • 10000 $0.72
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    SIS888DN-T1-GE3 Reel 6,000 3,000
    • 1 -
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    • 10000 $0.59
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    New Advantage Corporation SIS888DN-T1-GE3 6,000 1
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    • 10000 $0.74
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    Vishay Siliconix SIS822DNT-T1-GE3

    MOSFET N-CH 30V 12A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIS822DNT-T1-GE3 Cut Tape 6,000 1
    • 1 $0.46
    • 10 $0.34
    • 100 $0.22
    • 1000 $0.15
    • 10000 $0.15
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    SIS822DNT-T1-GE3 Digi-Reel 6,000 1
    • 1 $0.46
    • 10 $0.34
    • 100 $0.22
    • 1000 $0.15
    • 10000 $0.15
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    SIS822DNT-T1-GE3 Reel 6,000 3,000
    • 1 -
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    • 10000 $0.09
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    Vishay Siliconix SIS862DN-T1-GE3

    MOSFET N-CH 60V 40A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIS862DN-T1-GE3 Cut Tape 4,365 1
    • 1 $1.39
    • 10 $0.97
    • 100 $0.73
    • 1000 $0.52
    • 10000 $0.52
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    SIS862DN-T1-GE3 Digi-Reel 4,365 1
    • 1 $1.39
    • 10 $0.97
    • 100 $0.73
    • 1000 $0.52
    • 10000 $0.52
    Buy Now
    SIS862DN-T1-GE3 Reel 3,000 3,000
    • 1 -
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    • 10000 $0.42
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    New Advantage Corporation SIS862DN-T1-GE3 3,000 1
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    • 10000 $0.59
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    SIS8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss


    Original
    SiS888DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    inductor 221

    Abstract: SIS811
    Contextual Info: SMT Power Inductor SIS811 Type Features High current 3.5A, 10uH type. Unshielded. Self-leads ,suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters


    Original
    SIS811 100KHz, SIS811-331 SIS811-471 SIS811-102 SIS811-681 SIS811-220 SIS811-330 1000uH -20oC inductor 221 PDF

    Contextual Info: SPICE Device Model SiS890DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original
    SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    SiS888DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS822DNT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SiS822DNT AN609, 4429u 9523u 6061m 9816m 9565m 5122m 6905m 29-Apr-14 PDF

    Contextual Info: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiS862DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS892DN 2002/95/EC SiS892DN-T1-GE3 18-Jul-08 PDF

    10uH inductor

    Abstract: SIS811
    Contextual Info: SMT Power Inductor SIS811 Type Features High current 3.5A, 10uH type. Unshielded. Self-leads ,suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters


    Original
    SIS811 SIS811-100 SIS811-H) SIS811-680 SIS811-101 SIS811-151 SIS811-221 SIS811-331 SIS811-471 SIS811-681 10uH inductor PDF

    P54C

    Abstract: SiS85C503 SiS85C501 SiS85C502 SiS+85C503
    Contextual Info: Pentium/P54C PCI/ISA Chipset 1 85C501/502/503 Overview SiS85C501 SiS85C502 SiS85C503 PCI/ISA Cache Memory Controller PCMC PCI Local Data Buffer (PLDB) PCI System I/O (PSIO) A whole set o f the SiS85C501, 85C502, and 85C503 provides fully integrated support for the


    OCR Scan
    Pentium/P54C 85C501/502/503 SiS85C501 SiS85C502 SiS85C503 85C502, 85C503 P54C SiS+85C503 PDF

    S1209

    Abstract: SiS890DN
    Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


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    SiS890DN SiS890DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1209 PDF

    SiS892ADN

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    p54c

    Abstract: SiS 85C503 85c501 3-8 decoder 74138 pin diagram 3-8 decoder 74138 85c503 9ROM SiS85C501 SiS chipset T54B
    Contextual Info: Pentium/P54C PCI/ISA Chipset 1 85C501/502/503 Overview SiS85C501 SiS85C502 SiS85C503 PCI/ISA Cache Memory Controller PCMC PCI Local Data Buffer (PLDB) PCI System I/O (PSIO) A whole set of the SiS85C501, 85C502, and 85C503 provides fully integrated support for the


    Original
    Pentium/P54C 85C501/502/503 SiS85C501 SiS85C502 SiS85C503 85C502, 85C503 p54c SiS 85C503 85c501 3-8 decoder 74138 pin diagram 3-8 decoder 74138 9ROM SiS chipset T54B PDF

    Contextual Info: SiS862DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () (Max.) ID (A)f 0.0085 at VGS = 10 V 40g 0.0105 at VGS = 6.0 V 40g 0.0125 at VGS = 4.5 V 40g • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm


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    SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SIS83

    Contextual Info: SMT Power Inductor SIS83 Type Features • ■ ■ ■ ■ ■ Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    OCR Scan
    SIS83 SIS83-100 SIS83-150 SIS83-220 SIS83-330 SIS83-470 SIS83-680 SIS83-101 SIS83-151 PDF

    Contextual Info: SPICE Device Model SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    SiS822DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS892DN 2002/95/EC SiS892DN-T1-GE3 11-Mar-11 PDF

    SIS83

    Contextual Info: SMT Power Inductor SIS83 Type Features Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    Original
    SIS83 100KHz, Is471 SIS83-221 SIS83-331 SIS83-471 SIS83-681 SIS83-102 1000uH -20oC PDF

    SIS811

    Contextual Info: SMT Power Inductor SIS811 Type Features • High current 3.5A, 10uH type. ■ Unshielded. ■ Self-leads .suitable fo r high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter, DC-AC Inverters


    OCR Scan
    SIS811 SIS811-100 SIS811-150 SIS811-220 SIS811-330 SIS811-470 SIS811-680 SIS811-101 PDF

    Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original
    SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original
    SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS888DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SiS888DN AN609, 0033m 8804u 0137m 3078m 3392m 8067m 5000m 15-Sep-14 PDF

    SIS85

    Abstract: SIS85-100 SIS85-150 SIS85-1R0 SIS85-1R5 SIS85-220 SIS85-2R2 SIS85-330 SIS85-3R3 SIS85-4R7
    Contextual Info: SMT Power Inductor SIS85 Type Features Low profile 5.0mm max. height , high current (6.8A, 1uH) SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


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    SIS85 SIS85-680 SIS85-101 SIS85-151 SIS85-221 SIS85-331 SIS85-471 SIS85-681 SIS85-102 1000uH SIS85-100 SIS85-150 SIS85-1R0 SIS85-1R5 SIS85-220 SIS85-2R2 SIS85-330 SIS85-3R3 SIS85-4R7 PDF