SIS8 Search Results

Contextual Info: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss

inductor 221

Abstract: SIS811
Contextual Info: SMT Power Inductor SIS811 Type Features High current 3.5A, 10uH type. Unshielded. Self-leads ,suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters

Contextual Info: SPICE Device Model SiS890DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SiS822DNT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiS862DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested

Contextual Info: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

10uH inductor

Abstract: SIS811
Contextual Info: SMT Power Inductor SIS811 Type Features High current 3.5A, 10uH type. Unshielded. Self-leads ,suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters

P54C

Abstract: SiS85C503 SiS85C501 SiS85C502 SiS+85C503
Contextual Info: Pentium/P54C PCI/ISA Chipset 1 85C501/502/503 Overview SiS85C501 SiS85C502 SiS85C503 PCI/ISA Cache Memory Controller PCMC PCI Local Data Buffer (PLDB) PCI System I/O (PSIO) A whole set o f the SiS85C501, 85C502, and 85C503 provides fully integrated support for the

S1209

Abstract: SiS890DN
Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

SiS892ADN

Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested

p54c

Abstract: SiS 85C503 85c501 3-8 decoder 74138 pin diagram 3-8 decoder 74138 85c503 9ROM SiS85C501 SiS chipset T54B
Contextual Info: Pentium/P54C PCI/ISA Chipset 1 85C501/502/503 Overview SiS85C501 SiS85C502 SiS85C503 PCI/ISA Cache Memory Controller PCMC PCI Local Data Buffer (PLDB) PCI System I/O (PSIO) A whole set of the SiS85C501, 85C502, and 85C503 provides fully integrated support for the

Contextual Info: SiS862DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () (Max.) ID (A)f 0.0085 at VGS = 10 V 40g 0.0105 at VGS = 6.0 V 40g 0.0125 at VGS = 4.5 V 40g • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm

SIS83

Contextual Info: SMT Power Inductor SIS83 Type Features • ■ ■ ■ ■ ■ Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,

Contextual Info: SPICE Device Model SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

SIS83

Contextual Info: SMT Power Inductor SIS83 Type Features Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,

SIS811

Contextual Info: SMT Power Inductor SIS811 Type Features • High current 3.5A, 10uH type. ■ Unshielded. ■ Self-leads .suitable fo r high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter, DC-AC Inverters

Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: SiS888DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

SIS85

Abstract: SIS85-100 SIS85-150 SIS85-1R0 SIS85-1R5 SIS85-220 SIS85-2R2 SIS85-330 SIS85-3R3 SIS85-4R7
Contextual Info: SMT Power Inductor SIS85 Type Features Low profile 5.0mm max. height , high current (6.8A, 1uH) SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,