SIS888DN Search Results

Contextual Info: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss

Contextual Info: SPICE Device Model SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SiS888DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in