MBT3906 Search Results

MBT3906 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBT3906DW	Unknown	Dual General Purpose Transistor PNP+PNP Silicon	Original	PDF	779.61KB	6
MBT3906DW	Weitron	Dual General Purpose Transistor PNP+PNP Silicon	Original	PDF	329.33KB	6
MBT3906DW1	On Semiconductor	Dual General Purpose Transistors	Original	PDF	101.36KB	6
MBT3906DW1T1	E-Tech Electronics	Dual General Purpose Transistors	Original	PDF	733.2KB	10
MBT3906DW1T1	Leshan Radio Company	Dual General Purpose Transistors	Original	PDF	429.27KB	10
MBT3906DW1T1	Motorola	Dual General Purpose Transistors	Original	PDF	1.25MB	12
MBT3906DW1(T1)	Unknown	Silicon PNP Transistor	Original	PDF	429.27KB	10
MBT3906DW1T1	On Semiconductor	MBT3906 - TRANSISTOR 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-88, 6 PIN, BIP General Purpose Small Signal	Original	PDF	133.94KB	8
MBT3906DW1T1	On Semiconductor	Dual General Purpose Transistors	Original	PDF	101.36KB	6
MBT3906DW1T1-D	On Semiconductor	Dual General Purpose Transistor	Original	PDF	103.8KB	8
MBT3906DW1T1G	On Semiconductor	Dual General Purpose Transistor	Original	PDF	102.94KB	6
MBT3906DW1T2G	On Semiconductor	MBT3906 - Dual PNP Bipolar Transistor	Original	PDF	127.51KB	6
MMBT3906	Shenzhen Heketai Electronics Co Ltd	PNP bipolar transistor in SOT-23 surface mount package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300.	Original	PDF
MMBT3906W	AK Semiconductor	PNP transistor in SOT-323 package with -40V collector-emitter voltage, -0.2A continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications.	Original	PDF

AD-MMBT3906	JCET Group	PNP transistor in SOT-23 package, part of the AD-MMBT3906 series, with a maximum collector current of -200 mA, collector-emitter voltage of -40 V, and power dissipation of 200 mW, AEC-Q101 qualified.	Original	PDF
MMBT3906	Microdiode Semiconductor	SOT-23 Plastic-Encapsulate Transistors, PNP, BASE, EMITTER, COLLECTOR	Original	PDF
MMBT3906T	SLKOR		Original	PDF
MMBT3906	JCET Group	PNP epitaxial planar transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain hFE of 100-300.	Original	PDF
MMBT3906 2A(RANGE:100-300)	JCET Group	MMBT3906 is a PNP transistor in SOT-23 plastic package, with -40V collector-base and collector-emitter voltage ratings, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain ranging from 100 to 300.	Original	PDF
MMBT3906	CREATEK Microelectronics	PNP small signal transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300.	Original	PDF

MBT3906 Price and Stock

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onsemi MMBT3906TT1G TRANS PNP 40V 0.2A SC75 SOT416
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBT3906TT1G	Reel	468,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
Avnet Americas	MMBT3906TT1G	Reel	260,981	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Newark	MMBT3906TT1G	Cut Tape	5,804		1	1 $0.01 10 $0.01 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
RS	MMBT3906TT1G	Bulk			200	1 - 10 - 100 - 1000 $0.13 10000 $0.11	Get Quote
Bristol Electronics ()	MMBT3906TT1G		48,479		45	1 - 10 - 100 $0.11 1000 $0.02 10000 $0.01	Buy Now
	MMBT3906TT1G		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MMBT3906TT1G		2,908		89	1 - 10 - 100 $0.06 1000 $0.01 10000 $0.01	Buy Now

TME	MMBT3906TT1G				1	1 $0.13 10 $0.09 100 $0.05 1000 $0.03 10000 $0.02	Get Quote
Avnet Asia	MMBT3906TT1G		48,000	16 Weeks	30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	MMBT3906TT1G			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MMBT3906TT1G		39,000	18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	MMBT3906TT1G		78,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	MMBT3906TT1G		102,000			1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Win Source Electronics	MMBT3906TT1G		226,260			1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
Taiwan Semiconductor MMBT3906L-RFG TRANS PNP 40V 0.2A SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MMBT3906L-RFG	Cut Tape	62,312		1	1 $0.16 10 $0.10 100 $0.06 1000 $0.04 10000 $0.04	Buy Now
	MMBT3906L-RFG	Reel	51,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
onsemi SMMBT3906LT1G TRANS PNP 40V 0.2A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMMBT3906LT1G	Reel	48,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
Avnet Americas ()	SMMBT3906LT1G	Reel	69,000	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
	SMMBT3906LT1G	Ammo Pack			1	1 $0.11 10 $0.11 100 $0.04 1000 $0.04 10000 $0.04	Buy Now
	SMMBT3906LT1G	Ammo Pack			1	1 $0.12 10 $0.12 100 $0.04 1000 $0.04 10000 $0.04	Buy Now
Mouser Electronics	SMMBT3906LT1G		560,929			1 $0.15 10 $0.06 100 $0.04 1000 $0.03 10000 $0.02	Buy Now
Newark ()	SMMBT3906LT1G	Cut Tape	40,088		1	1 $0.14 10 $0.14 100 $0.05 1000 $0.05 10000 $0.05	Buy Now
	SMMBT3906LT1G	Cut Tape	12,053		1	1 $0.13 10 $0.13 100 $0.04 1000 $0.04 10000 $0.04	Buy Now
RS	SMMBT3906LT1G	Bulk			100	1 - 10 - 100 $0.08 1000 $0.07 10000 $0.07	Get Quote

TME	SMMBT3906LT1G				1	1 $0.10 10 $0.07 100 $0.04 1000 $0.02 10000 $0.02	Get Quote
ComSIT USA	SMMBT3906LT1G		342			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SMMBT3906LT1G		30,000	17 Weeks	60,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	SMMBT3906LT1G			12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SMMBT3906LT1G		93,000	13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	SMMBT3906LT1G		24,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	SMMBT3906LT1G		93,000			1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
Infineon Technologies AG SMBT3906E6327HTSA1 TRANS PNP 40V 0.2A PG-SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SMBT3906E6327HTSA1	Digi-Reel	20,277		1	1 $0.25 10 $0.15 100 $0.09 1000 $0.06 10000 $0.06	Buy Now
	SMBT3906E6327HTSA1	Cut Tape	20,277		1	1 $0.25 10 $0.15 100 $0.09 1000 $0.06 10000 $0.06	Buy Now
	SMBT3906E6327HTSA1	Reel	18,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
Avnet Americas	SMBT3906E6327HTSA1	Reel	72,000	4 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
TME	SMBT3906E6327HTSA1		1,770		1	1 $0.17 10 $0.10 100 $0.08 1000 $0.05 10000 $0.05	Buy Now
Chip 1 Exchange	SMBT3906E6327HTSA1		318,338			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip Stock	SMBT3906E6327HTSA1		46,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	SMBT3906E6327HTSA1			5 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SMBT3906E6327HTSA1		42,800			1 - 10 - 100 - 1000 $0.08 10000 $0.05	Buy Now
Taiwan Semiconductor MMBT3906H-RFG SOT-23, -40V, -0.2A, PNP TRANSI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MMBT3906H-RFG	Reel	5,570		3,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
	MMBT3906H-RFG	Digi-Reel	5,570		1	1 $0.10 10 $0.05 100 $0.04 1000 $0.03 10000 $0.03	Buy Now
	MMBT3906H-RFG	Cut Tape	5,570		1	1 $0.10 10 $0.05 100 $0.04 1000 $0.03 10000 $0.03	Buy Now

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MBT3906 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40	Original	MBT3906DW OT-363 SC-88) MBT3906DW OT-363	PDF
Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40	Original	MBT3906DW OT-363 SC-88) MMBT3906DW OT-363	PDF
Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1T1 23/SOT MBT3906DW1T1 363/SC	PDF
1N916 Abstract: MBT3906DW1T1 Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1T1 MBT3906DW1T1 23/SOT 363/SC r14525 MBT3906DW1T1/D 1N916	PDF
1N916 Abstract: MBT3906DW1T1 MBT3906DW1T1G Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1T1 MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916 MBT3906DW1T1G	PDF
Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications	Original	MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1	PDF
EE-43007 Abstract: EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111 Contextual Info: DN06023/D Design Note – DN06023/D Universal AC 15 W 4 Cell Charger Device Application Input Voltage Output Power Topology I/O Isolation MBT3906 MC33340 NCP1055 NIS6111 4 Cell NiCd-NiMH Battery Charger Universal 90-264 Vac 15 Watt Flyback Optional Other Specifications	Original	DN06023/D MBT3906 MC33340 NCP1055 NIS6111 EE-43007 EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111	PDF
Contextual Info: MBT3906DW1, MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1, SMBT3906DW1 MBT3906DW1 OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D	PDF
MBT3904DW1T1 Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1 Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications	Original	MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3904DW1T1 SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1	PDF
MBT3906DW1T1G Abstract: 1N916 Contextual Info: MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1T1G MBT3906DW1T1G OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916	PDF
1N916 Abstract: MBT3906DW VCE-30 Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol	Original	MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 VCE-30	PDF
MBT3904 datasheet Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded	Original	MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT 363/SC STYLE00 MBT3904 MBT3904 datasheet MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1	PDF
MBT3906DWITI Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed	Original	MBT3904DWlT1/D MBT3904DW1TI, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DWI MBT3906DWI MBT3946DWI 14WI-247 MBT3906DWITI MBT390 MBT3946DW1 MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI	PDF
Contextual Info: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G 23/SOTâ MBT3906DW1T1/D	PDF

"dual TRANSISTORs" pnp npn Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1 Contextual Info: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1	Original	SC-88, OT-363 419B-02 OT-563 63A-01 SO-16 751B-05 "dual TRANSISTORs" pnp npn BC847CPDW1T1 dual pnp BC858CDW1T1	PDF
Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1/D	PDF
1N916 Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed	Original	MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 1N916 MBT3904DW1T1 MBT3906DW1T1	PDF
5070H Abstract: MBT3904 datasheet MBT3904 MBT3904DW1T1 MBT3946 MBT3906DW1T1 MBT3946DW1T1 Contextual Info: Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded	Original	MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT 363/SC MBT3904 5070H MBT3904 datasheet MBT3904DW1T1 MBT3946 MBT3906DW1T1	PDF
1N916 Abstract: MBT3906DW Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO	Original	MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded	Original	MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1	PDF
MBT3906DW Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed	Original	MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW 1N916 MBT3904DW1T1 MBT3906DW1T1	PDF
Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value	Original	MBT3906DW OT-363 SC-88) MBT3906DW OT-363	PDF
Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in	Original	MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1 OT-363/SC-88	PDF
1N916 Abstract: MBT3906DW Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol	Original	MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916	PDF

MBT3906 Search Results

MBT3906 Datasheets (29)

MBT3906 Price and Stock

onsemi MMBT3906TT1G

Taiwan Semiconductor MMBT3906L-RFG

onsemi SMMBT3906LT1G

Infineon Technologies AG SMBT3906E6327HTSA1

Taiwan Semiconductor MMBT3906H-RFG

MBT3906 Datasheets Context Search

1N916

1N916

EE-43007

MBT3904DW1T1

MBT3906DW1T1G

1N916

MBT3904 datasheet

MBT3906DWITI

"dual TRANSISTORs" pnp npn

1N916

5070H

1N916

MBT3906DW

1N916