MBN800 Search Results

MBN800E33D

Contextual Info: Spec.No.IGBT-SP-03012 R1 IGBT MODULE MBN800E33D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.

MBN800E33D

Abstract: MBN800
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R4 P1 MBN800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

Hitachi DSA00281

Abstract: MBN800
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10014 R0 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

mbn800h45e2h

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R0 MBN800H45E2-H Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R1 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10014 R1 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

MBN800E33E

Abstract: L120 ls 1802
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05015 R2 MBN800E33E Silicon N-channel IGBT 3300V E version OUTLINE DRAWING FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input

circuit diagram of single phase water pump

Abstract: 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine
Contextual Info: +,7$&+, 3RZHU 6HPLFRQGXFWRU 3URGXFW - ,*%7 PRGXOH - +LJK 9ROWDJH ,& Motor driver, MOS/IGBT gate driver - 6XUJH 6XSSUHVVRU 3RZHU 'LRGH - +LJK 9ROWDJH )DVW 5HFRYHU\ 'LRGH +LWDFKL ,*%7 0RGXOHV

Contextual Info: DIODE MODULE Spec.No.SR2-SP-09001 R1 P1 MDM800H45E2 Target Specification OUTLINE DRAWING FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.

mbm150gr12

Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Contextual Info: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics

Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-03002R8 MDM800E33D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Repetitive Peak Reverse Voltage

carrier wiring diagram

Abstract: igbt wiring IGBT DRIVER SCHEMATIC IGBT parallel hitachi snubber capacitor igbt parallel diagram MBN800
Contextual Info: April 1998 No.17 Hitachi Power Devices Technical Information PD Room This month we present you topics on connecting IGBT elements in parallel following up on the material last month. Last month, we discussed on the gate driver circuit used for driving elements in parallel and this month, we describe the main circuit wiring.

diode hitachi

Abstract: LS190N 1000-1 POWER MODULE
Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.

C2E1

Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
Contextual Info: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ

N2M400

Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
Contextual Info: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)

Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.

Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.