MBN1200D33C
Abstract: Hitachi DSA0047
Contextual Info: IGBT MODULE MBN1200D33C Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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mbm150gr12
Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Contextual Info: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics
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mbn1200e17dmbn1600e17dmbn1800e17dks10004+10mbm150gr12mbn1200d33ac2e1mbm300gs12a5252 f 1002mdn1200d33m8ndmbm200js12ewmbm800e17dmbn1200e25c igbt
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C2E1
Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
Contextual Info: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ
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mbn1200e17dmbn1600e17dmbn1800e17dmbn1800e17dd+14mbn2400e17dmbn1200e17e12-fast-onks10003c2e1mdn1200d33mbn1200d33ambm150gr12mbm300gs12ambn1200e25cmbm500e33e2mbm300gs12awmbl400embm300gr12
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N2M400
Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
Contextual Info: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)
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ks05013mbn800e33dmbn1200e33dmbn1200d33c+10mbn600c33ambn400c33ambn1200e25cn2m400mbn1200d33ambm300gs12awc2e1mbm200js12ewmbn600gs12awmbm75gs12aw
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