MBM500E33E2 Search Results

MBM500E33E2

Abstract: e2au
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08020 R2 MBM500E33E2 Target Specification Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08020 R6 P1 MBM500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08020 R4 MBM500E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08020 R5 P1 MBM500E33E2 Preliminary Specification Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

mbm150gr12

Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Contextual Info: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics

C2E1

Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
Contextual Info: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ