MBN900D45A Search Results

MBN900D45A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBN900D45A		Hitachi Semiconductor	TRANS IGBT MODULE N-CH 4500V 900A	Original	PDF	153.5KB	1

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Power Integrations 1SD312F2-MBN900D45A IC GATE DRVR HALF-BRIDGE MODULE
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Power Integrations 1SP0340D2S0-MBN900D45A Gate Drivers ONLY for Hitachi MBN900D45A module
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Power Integrations 1SP0340V2M0-MBN900D45A Gate Drivers ONLY for Hitachi MBN900D45A module
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Mouser Electronics	1SP0340V2M0-MBN900D45A					1 - 10 $218.30 100 $211.59 1000 $211.59 10000 $211.59	Get Quote

MBN900D45A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MBN900D45A Abstract: IC-900A Contextual Info: Spec.No.IGBT-SP-02008 R2 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Preliminary spec. FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.	Original	IGBT-SP-02008 MBN900D45A 000cycles) MBN900D45A IC-900A	PDF
Contextual Info: Spec.No.IGBT-SP-02008 R5 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.	Original	IGBT-SP-02008 MBN900D45A 000cycles)	PDF
MBN900D45A Abstract: IC-900A Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.	Original	IGBT-SP-02008 MBN900D45A 000cycles) MBN900D45A IC-900A	PDF
mbm150gr12 Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt Contextual Info: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics	Original	MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt	PDF
Contextual Info: DIODE MODULE Spec.No.SR2-SP-05006 R3 P1 MDM900E45A OUTLINE DRAWING PRELIMINARY SPEC. Unit in mm FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . CIRCUIT DIAGRAM	Original	SR2-SP-05006 MDM900E45A	PDF
C2E1 Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12 Contextual Info: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。】Ｃ：適合Ｓ.Ｃ：適合Ｎ：未対応（但し適用除外項目物質を含有）【ステータス】Ｍ：量産品Ｗ：ＷＳ	Original	MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12	PDF
N2M400 Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C Contextual Info: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)	Original	KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C	PDF
MBN900D45A Abstract: comparative tracking index Contextual Info: Spec.No.SR2-SP-05006 R3 DIODE MODULE MDM900E45A OUTLINE DRAWING PRELIMINARY SPEC. Unit in mm FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM	Original	SR2-SP-05006 MDM900E45A MBN900D45A comparative tracking index	PDF