MARKING- L31 Search Results

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

MARKING L31 SMD

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE

philips bav23s

Abstract: MARKING L31 SMD BAV23S L31 l31 sot23 SMD L31 BAV23S Philips smd code marking sot23 marking L31 PHILIPS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV23S General purpose double diode Product specification Supersedes data of 1999 May 05 2001 Oct 12 Philips Semiconductors Product specification General purpose double diode FEATURES BAV23S MARKING

SMD L31

Abstract: smd diode marking 9 ba MARKING- L31 BAV23S l31 BAV23S MARKING L31 SMD
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

SMD L31

Abstract: MARKING L31 SMD SOT-23 marking l31 BAV23S l31 BAV23S marking L31 SOT23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

MARKING L31 SMD

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

MARKING L31 SMD

Abstract: BAV23S l31
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

marking W26 sot23

Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Contextual Info: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters

Contextual Info: 2.5V & 3.3V LVDS Oscillator GXO-L31 Specifications Variant Parameters J       ±100ppm ±50ppm ±25ppm <170MHz       B A Operating temperature range: -10 to +70°C -40 to +85°C     I Storage temperature range:

L3121B

Abstract: STMicroelectronics marking code date Date Code Marking STMicroelectronics IEC1000-4-5 L3000N VDE0433 VDE0878
Contextual Info: L3121B  Application Specific Discretes A.S.D.TM PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V.

2A 220v transformer

Abstract: L3000N L3121B
Contextual Info: L3121B Application Specific Discretes A.S.D. PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V.

Contextual Info: L3121B PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR . . . FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. HOLDING CURRENT = 150 mA min. HIGH SURGE CURRENT CAPABILITY.

Contextual Info: 7 / SGS-TILIHOMSON Application Specific Discretes A.S.D. L3121B PROGRAM M ABLE TR AN SIEN T VOLTAGE SUPPRESSO R FOR SLIC PROTECTION FEATURES . BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. • PROGRAMMABLE BREAKDOWN VOLTAGE

Contextual Info: SGS-THOMSON L3121B m Application Specific Discretes A.S.D. PRO G RAM M ABLE TRANSIENT VOLTAGE SUPPRESSO R FOR SLIC PROTECTION FEATURES • BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. ■ PROGRAMMABLE BREAKDOWN VOLTAGE

VB MARKING

Contextual Info: i C T S G S -T H O M S O N [M iSSi(greMO(êS L3121B PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FEATURES • BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. ■ PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. . HOLDING CURRENT = 150m A m in.

BSR18R

Abstract: BSR18AR 1N916 BSR18 BSR18A BSP18
Contextual Info: “Ñ AMER PHILIPS/DISCRETE OhE D • bb53=l31 DDlSISt t BSR18 BSR18A T "- 3 7 - SILIC O N L O W -P O W E R S W IT C H IN G T R A N S IS T O R S * micromirli;l,llre ptasiic envelope, intended for sw itching and linear applfcations in thick and thin-film circuits.

l3100

Abstract: L3100B L3100B1
Contextual Info: L3100B L3100B1  Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V PROGRAMMABLE CURRENT LIMITATION FROM 50 mA TO 550 mA HIGH SURGE CURRENT CAPABILITY

oh140

Contextual Info: *T i L3100B L3100B1 SGS-THOMSON ;y Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE FEATURES • UNIDIRECTIONAL FUNCTION ■ PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V ■ PROGRAMMABLE CURRENT LIMITATION

L3100

Abstract: L3100B L3100B1 ptc resistor 300 to 500 e
Contextual Info: L3100B L3100B1  Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V PROGRAMMABLE CURRENT LIMITATION FROM 50 mA TO 550 mA HIGH SURGE CURRENT CAPABILITY