MARKING W2 SOT23 TRANSISTOR Search Results

SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

MARKING W2 SOT23 TRANSISTOR

Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
Contextual Info: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23

MARKING W2 SOT23 TRANSISTOR

Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
Contextual Info: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)

MARKING W3 SOT23 TRANSISTOR

Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: S AM S UN G SEMICONDUCTOR I NC MMBA812M7 14E D §7*11,4142 0 0 0 75 3 1 , T | PNP EPITAXIAL SILICON TRANSISTOR T -^ l-O q GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

MARKING W2 SOT23 TRANSISTOR

Contextual Info: SAMSUNG SEMI CONDUCTOR INC NPN EPITAXIAL SILICON TRANSISTOR MMBC1623L4 :- T - ^ - H AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C - Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA13 l^ E 00 072c10 4 | O J NPN EPITAXIAL SILICON TRANSISTOR _ L DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7*11.4:1.42 O O O T a T l b | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 1 DARLINGTON AMPLIFIER TRANSISTOR :- SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage

transistor marking SA p sot-23

Abstract: MARKING 14E samsung f4 14e npn
Contextual Info: SA M SUNG SEMICONDUCTOR INC MMBC1009F4 14E D _ | 7 ^ 4 1 4 2 0007240 0 j T ~ 3 / ~ /? NPN EPITAXIAL SILICON TRANSISTOR AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotlector-Emitter Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBC1009F2 11E D | ? * ii,4 m 3 0 0 0 7 2 3 fl 2 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 9 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

pn2222a fairchild

Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5087 . 14E ° | fl J | 0007575 PNP EPITAXIAL SILICON TRANSÌSTOR T LOW NOISE TRANSISTOR - 3 9 - ñ SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: S A M S U N G SE MI C O N D U C T OR INC MMBTA64 D | 7^4142 0007300 3 | PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG S EM I C ON D UC T OR IN C BCW33 14E D j 0007207 | NPN EPITAXIAL SILICON TRANSISTOR T liL N tK A L 2 rU n rU o C - ^ - l‘ 1 r l A I N o l d 1U H SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Sym bol C h a ra cte ristic ; Collector-Base Voltage ' Collector-Emitter Voltage

Contextual Info: S AM S UN G SEMICONDUCTOR INC MMBTA05 IME D | 7^4142 0007203 b | NPN EPITAXIAL SILICON TRANSISTOR T 'Ì f ì 'f ì DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cottector-Emltter Voltage

MARKING W2 SOT23 TRANSISTOR

Contextual Info: SAM SUN G SEMICONDUCTOR INC MMBA811C6 14E D | 7 ^ 4 1 4 2 □ D0?a3ti 1 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: SAMSUNG SEMICONDUCTOR INC IME MMBT6428 D ÜOG72ñb 2 I NPN EPITAXIAL SILICON TRANSÌSTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA56 IME D | TibMlMS O G O ? ^ ? 7 | PNP EPfTAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA55 m E D | 7^ *1142 00072*11. 5 | PNP EPITAXIAL SILICON TRANSISTOR ' T - £ CU \ CV DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating Unit Vceo Vcco Vebo Ig Pc Tstg Rth()-a) -6 0 -6 0 -4

Contextual Info: I S AM S U N G S E M I C O N D U C T O R . INC MMBT4124 14E D | 7*^4142 0 0 0 7 a tt» 7 | NPN EPITAXIAL SILICON TRANSISTOR .T j-a R -fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC M M BTH24 1MÉ O | y'IbMllS 0007305 è | NPN EPITAXIAL SILIC O N TRANSISTO R T-31-19 VHF MIXER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage * CoHector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation

Contextual Info: S A M SUNG SEMICONDUCTOR INC ' MMESAÖ11C8 «E O | Vil.Ml« 0 0 0 7 2 3 1 î | PHP EPITAXIAL SILICON TRANSISTOR T - a s - a DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Em itter Voltage