MARKING T1 Search Results

diode marking H2

Abstract: Marking H2 transistor mark code t1 COLOR marking codes marking code capacitors marking code k1 marking .H2 fuse MARKING CODE f2 marking code e2 marking code L2
Contextual Info: ACCU-GUARD FUSE MARKING CODES F1206A marking by special order only Code Current (A) C1 0.2 F1 0.25 G1 0.375 H1 0.50 K1 0.75 11 1.00 P1 1.25 L1 1.50 T1 1.75 21 2.00 V2 2.50 32 3.00 ⇒ Marking location : white side F0805B (all production is marked) Code

marking code T1

Abstract: capacitance diode marking T1 BB669WS
Contextual Info: BB669WS SILICON TUNING DIODE PINNING Features • Very high capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T1 Top View Marking Code: "T1"

Contextual Info: SSTA06 / MMSTA06 Transistors NPN General Purpose Transistor SSTA06 / MMSTA06 zDimensions Unit : mm zFeatures 1) BVCEO < 80V ( IC=1mA) 2) Complements the SSTA56 / MMSTA56. SSTA06 zPackage, marking and packaging specifications Part No. SSTA06 MMSTA06 Packaging type

1N916

Abstract: SC-89 LMBT3906
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1G FEATURE ƽSimplifies Circuit Design. 3 ƽ We declare that the material of product compliance with RoHS requirements. 1 ORDERING INFORMATION Device 2 Marking Shipping LMBT3906TT1G

spark gap

Abstract: phase failure relay relay omron diagram EN61810-1 P7S-14F-END electromechanical relay material declaration
Contextual Info: Relays with Forcibly Guided Contacts G7S Relays Conforming to EN Standard • Relays with forcibly guided contacts EN50205 Class A, certified by VDE . ■ Supports the CE marking of machinery (Machinery Directive). ■ Helps avoid hazardous machine status when used as

MIXA61H1200ED

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MICRON • M T12D 136 MEG X 36, 2 MEG x 18 DRAM MODULE SeWCOWXCTOR MC DRAM „ . . _ I V I W a . . Ä _ 1 MEG x 36>2 MEG x 18 FAST PAGE MODE (MT12D136 LOW POWER, PEXTENDED Y T P M n P n RF REFRESH (MT12D136 L) MODULE W b k FEATURES OPTIONS MARKING • Timing

INA-12063

Abstract: INA-12 INA-12063-BLK INA-12063-TR1 ir 032
Contextual Info: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance

MARKING CODE S5B

Abstract: S5B SOT
Contextual Info: SIEMENS Silicon Switching Diode Array SMBD 6100 • For high-speed switching applications • Common cathode Type Marking Ordering Code tape and reel SMBD 6100 s5B Q68000-A8438 Pin Configuration Package1) 3 ° SOT-23 W I Kl 1 EHA0700* Maximum Ratings Parameter

948F

Abstract: MC33 MC33765 MC33765DTB MC33765DTBR2 TSSOP16
Contextual Info: MC33765 Very Low Dropout/ Ultra Low Noise 5 Outputs Voltage Regulator  Semiconductor Components Industries, LLC, 2000 April, 2000 – Rev. 2 1 http://onsemi.com MARKING DIAGRAMS 16 MC33 765 ALYW TSSOP–16 DTB SUFFIX CASE 948F 16 1 1 A = Assembly Location

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

MIEB101W1200EH

Abstract: 101W1200EH
Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology

2SA1036K

Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

ZERO Bias diode

Abstract: 04W06 bat17
Contextual Info: SIEMENS BAT 63-099R Silicon Schottky Diodes * Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking BAT 63-099F3SN Ordering Code Pin Configuration Package Q62702-A1105 1= A SO T-143 2=C Maximum Ratings Parameter

INA-54063-BLK

Abstract: rfics marking 76 INA-54063 INA-54063-TR1
Contextual Info: 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features • Ultra-Miniature Package Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking With its wide bandwidth and high linearity, the INA-54063 is an excellent candidate for DBS IF

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

101W1200EH

Abstract: D434
Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.

06ATEX1034U

Contextual Info: PHΠNIX CONTACT m Terminal block G 5.-EX Article description G 5/.-EX * Article no. 2703172 2703185 2703198 2703208 G G G G 5/ 3-EX * 5/ 4-EX * 5/ 6-EX * 5/12-EX EC-TYPE EXAMINATION CERTIFICATE PTB 06ATEX1034U * lECEx-CERTIFICATE lECEx PTB 06.0043U Marking

diode J2 marking code

Abstract: VPS05176 diode marking j2 Q62702B diode 1-35 j2 capacitance diode marking T1 DIODE J2
Contextual Info: SIEMENS BB 639C Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners 1 VPS05176 1 o - M — 2 o EHA07001 Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1 =C 2=A SOD-323 Maximum Ratings

MIXA30WB1200TED

Contextual Info: MIXA30WB1200TED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 105 A IC25 = 17 A IC25 = 43 A IFSM = 320 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)

Contextual Info: MIXA80WB1200TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 265 A IC25 = 60 A IC25 = 120 A IFSM = 1100 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)