Motorola transistor smd marking codes
Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases
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ot-89ot-223c-1202001md+10motorola transistor smd marking codessmd transistor marking 5csmd codesmd transistor code marking 2ftoshiba smd marking code transistortransistor smd marking code 1psmd transistor 5cdiode sot-23 marking 15dsmd transistor marking 6btransistor smd marking code 1d
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MARKING 4FG
Abstract: ELL5PS SMD MARKING CODE 9D ELLVGG100M ELL6PG marking
Contextual Info: 1853-2012.qxp:QuarkCatalogTempNew 9/6/12 4:55 PM Page 1853 22 Inductors RoHS 20.0 Max. Ø16.0 Max. Ø9.5 Max. Magnetic Shielded SMD Choke Coils — ELL-4FG, ELL-4GG and ELL-4LG 8.9 Max. RoHS Marking 27.0 Max. TEST & MEASUREMENT Choke Coils — Type 9D and 12B
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elc09d103felc18b101lell6gg101mell6pg100m+11ell6pg150mell6pg220mell6pg330mell6pg470mell5ps100mell5ps150mmarking 4fgell5pssmd marking code 9dellvgg100mell6pg marking
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BC859 smd
Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E
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ot-23bc859bc860bc859a+6bc859bbc859cbc860abc860bbc859 smdbc860c
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BC859
Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F
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iso/ts16949ot-23bc859bc860+6bc859abc859bbc859cbc860abc860bbc860c
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d2 SMD TRANSISTORs pnp npn
Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Contextual Info: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100
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ot-23350mwbc858bbc558b+14bc858cbc558cbc859bc559bc859abc559ad2 smd transistors pnp npnbcw6002n2222a smdsmd transistorsb5r17hs7 markingdarlington bc smdsmd marking bj
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SMD Code 12W SOT-23
Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED
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ot-23350mwcmpt2222acmpt2369+16cmpt24cmpt2907acmpt3640cmpt3646cmft3904cmpt3906smd code 12w sot-23cxt5401 bksmd marking code 4ec2ta44smd marking code fe sot89marking code c3e sot-89npn smd bc550 smdsmd code 12w sot23marking bh sot-223marking da sot89
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VTX712025
Abstract: TXO712025LJ Temperature-Compensated Crystal 2520 VTX71 VTX712025LJH VTX7120 TXO71 26.000mhz VTX-71
Contextual Info: Temperature-Compensated Crystal Oscillator Temperature-Compensated Crystal Oscillator TXO71,VTX71 series TXO71,VTX71 series ϮApplications Crystal Oscillator Pb RoHS 4'' CellularΕPHSΕMobile Communication SX-2520 ●Applications ϮFeatures ●Features Cellular‧PHS‧GPS‧Communication
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txo71vtx71sx-2520000pcs+7vtx712025txo712025ljtemperature-compensated crystal 2520vtx712025ljhvtx712026.000mhzvtx-71
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MARKING SMD 4G
Abstract: kc860bw ie 420 smd marking BC860W MARKING SMD 4F
Contextual Info: Transistors SMD Type PNP General Purpose Transistors KC860W BC860W Features Low current (max. 100 mA) Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage
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kc860wbc860wkc860bwkc860cw+3marking smd 4gie 420 smd markingmarking smd 4f
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Contextual Info: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage
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bc859wbc860wbc859bwbc860bw+2bc859cwbc860cw
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SMD TRANSISTOR MARKING 4c
Abstract: 4F smd transistor NF marking TRANSISTOR SMD 4f BC859 smd smd marking rs smd transistor 4b MARKING SMD 4G smd 4B BC859 BC859C
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC859,BC860 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low voltage max. 45 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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bc859bc860ot-23bc859b+11bc859cbc860bbc860csmd transistor marking 4c4f smd transistornf marking transistor smd 4fbc859 smdsmd marking rssmd transistor 4bmarking smd 4gsmd 4b
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4d SMD Transistor
Abstract: 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO
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bc859wbc860wbc859bwbc860bw+12bc859cwbc860cw4d smd transistor4f smd transistormarking smd 4gsmd transistor marking 4dsmd transistor 4dsmd transistor 4bsmd transistor marking 4ctransistor smd 4hnf marking transistor smdmarking smd pnp transistor
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Contextual Info: Transistors IC SMD Type BC859,BC860 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low voltage max. 45 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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bc859bc860ot-23e-850+4bc859bbc859cbc860bbc860c
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Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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32GB eMMC
Abstract: MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5
Contextual Info: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMDEA-4M IT, MTFC8GLDEA-4M IT, MTFC16GJDEC-4M IT, MTFC32GJDED-4M IT, MTFC64GJDDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash
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mtfc16gjdec-4mmtfc32gjded-4mmtfc64gjddn-4m169-ball+1309005aef8523ca914gb-64gb441-it32gb emmcmtfc8gldea-4m itmicron emmc 5.0emmc bga 162bga 221 emmcmicron emmc application note221 ball emmc memoryemmc 4.41 firmware operationmtfc4gmicron emmc 4.5
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Contextual Info: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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marking code ya SMD Transistor
Abstract: SmD TRANSISTOR a71
Contextual Info: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to Vq = 1 V Overtemperature protection Reverse polarity proof
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q67000-a9190q67006-a9173q67006-a9288p-dso-14-4+6q67006-a9192p-dso-20-6regulato757d11672fimarking code ya smd transistorsmd transistor a71
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59014 transistor
Abstract: transistor 59013 h 331 59013 transistor Transistor 59014 TRANSISTOR 59015 transistor 59013 59013 h 331 FERRITE TRANSFORMER 20khz toroid ferrite RM6 marking code E5 SMD ic
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book INDUCTORS AND TRANSFORMERS vishay AZTRONIC vsD-db0039-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsd-db0039-021059014 transistortransistor 59013 h 33159013 transistor+7transistor 59014transistor 59015transistor 5901359013 h 331ferrite transformer 20khz toroidferrite rm6marking code e5 smd ic
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MT41K512M8RH-125
Abstract: 256M16
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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mt41k1g4mt41k512m8mt41k256m168192-cycle+309005aef84780270mt41k512m8rh-125256m16
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MT41K512M8RH-125
Abstract: MT41K512M8RH 256M16 mt41k256m16 78ball 9mm x 12mm 140PS MT41K512M8RH125
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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mt41k1g4mt41k512m8mt41k256m168192-cycle+709005aef84780270mt41k512m8rh-125mt41k512m8rh256m1678ball 9mm x 12mm140psmt41k512m8rh125
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Contextual Info: Preliminary‡ 4Gb: x4, x8, x16 Automotive DDR3L SDRAM Description 1.35V Automotive DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • • • • • • DDR3L SDRAM 1.35V is a low voltage version of the
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mt41k1g4mt41k512m8mt41k256m1609005aef8537e66f |
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DDR3L-1866
Abstract: MT41K512M8RH-125 256M16
Contextual Info: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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mt41k1g4mt41k512m8mt41k256m168192-cycle+409005aef84780270ddr3l-1866mt41k512m8rh-125256m16
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MT41K256M16
Abstract: MT41K 256M16 TIS88 AC175
Contextual Info: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • • • • • Automatic self refresh ASR Write leveling Multipurpose register Output driver calibration
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mt41k512m8mt41k256m1609005aef8488935bmt41k+3256m16tis88ac175
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smd code marking TV sot23
Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r
Contextual Info: Low Noise SMD" Transistors Low Noise SMD Transistors Description Mechanical Data Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed low-current
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ot-23bc849bbc849cbc850b+15bc850cbc859abc859bbc859cbc860asmd code marking tv sot23smd marking code riamarking code p1rsmd code marking sot23smd transistors marking code 2.fce marking sot-23sot-23 marking code n csmd transistorsbcf70marking p1r
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Contextual Info: Frequently Asked Questions Rev A For Series: EV32C3 1. What is this oscillator series? This oscillator series is a voltage controlled crystal oscillator VCXO . It utilizes a quartz crystal oscillator where the output frequency is controlled by an external control voltage applied to the input of the oscillator and the
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