TRANSISTOR 59015
Abstract: la7567e partsnic 1w402 PA2MF57DA Diode MARKING E26 BAS16-03W 723p audi s2 NT 407 F TRANSISTOR
Text: 1W407, BB689 BB565 RF Amplifier FET Video Transistor BB502CBS 2SB709A Amplifier BF799W , 558.15 E65 823.25 566.15 E66 831.25 574.15 E67 839.25 582.15 E68 847.25 590.15 E69 855.25 598.15 C57
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PA2MF57DA
TRANSISTOR 59015
la7567e
partsnic
1w402
PA2MF57DA
Diode MARKING E26
BAS16-03W
723p
audi s2
NT 407 F TRANSISTOR
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59014 transistor
Abstract: transistor 59013 h 331 59013 transistor Transistor 59014 TRANSISTOR 59015 transistor 59013 59013 h 331 FERRITE TRANSFORMER 20khz toroid ferrite RM6 marking code E5 SMD ic
Text: . 70 1 . 18000 12 23 20 IG120 59015 3.9 . 100000 Application: high
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vsD-db0039-0210
59014 transistor
transistor 59013 h 331
59013 transistor
Transistor 59014
TRANSISTOR 59015
transistor 59013
59013 h 331
FERRITE TRANSFORMER 20khz toroid
ferrite RM6
marking code E5 SMD ic
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2007 - HX8678
Abstract: HX8677 ka 20885 D Himax
Text: TFT LCD Source Driver with TCON DATA SHEET Preliminary V01 DRV1 O Power transistor gate , transistor gate signal for the boost converter 2. 2nd PWM can be used to generate VDDA power if needed
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HX8262-A-DS
HX8262-A
HX8262-A
800RGB
24-bit
400x240,
800x480
800x600
73November,
HX8678
HX8677
ka 20885 D
Himax
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1999 - TV horizontal Deflection Systems
Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet CRT TV electron gun horizontal section in crt television TV flyback transformer
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A
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16kHz
32kHz,
64kHz,
100kHz.
TV horizontal Deflection Systems
TRANSISTOR REPLACEMENT GUIDE
an363
TV horizontal Deflection Systems 25
transistor horizontal section tv
Horizontal Deflection Switching Transistors
TV horizontal Deflection Systems mosfet
CRT TV electron gun
horizontal section in crt television
TV flyback transformer
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1999 - ADM6315-31D4ARTZR7
Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline
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OT-143
ADM6315
ADM811
ADM6315
D00081-0-12/11
ADM6315-31D4ARTZR7
ADM6315-29D4ART-RL7
branding llv
ADM6315-46D3ART
transistor F 463
V/65e9 transistor
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2006 - transistor C 2240
Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline
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OT-143
ADM6315
ADM811
ADM6315
C00081-0-4/06
transistor C 2240
ADM6315-44D2ARTZR71
ADM6315-29D2ARTZR71
308 transistor
sot143
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1999 - TO-253-AA
Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240
Text: JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline
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OT-143
ADM6315
ADM811
OT-143
D00081-0-9/07
TO-253-AA
Small-outline integrated circuit SOT 143
transistor 143
46d1
308 transistor
MDV 1-2 kv
SOT-143
sot143
transistor
transistor C 2240
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1999 - Not Available
Abstract: No abstract text available
Text: TO JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , -Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4
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OT-143
ADM6315
ADM811
OT-143
D00081-0-12/11
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YG6260
Abstract: YG-6260 toshiba TO-3P AC701
Text: Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile , , penetrate plastic packages and thus shorten the life of the transistor . The base oil of Toshiba Silicone Grease YG6260 does not easily separate and thus does not adversely affect the life of transistor . This
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1999 - transistor TO Outline Dimensions
Abstract: transistor d 140 g
Text: -253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters , -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4
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OT-143
ADM6315
ADM811
ADM6315
D00081-0-9/13
transistor TO Outline Dimensions
transistor d 140 g
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2001 - "Phase Discriminator"
Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , techniques and computer-controlled wire bonding of the assembly. The manufacture of the transistor can be , between the relative insertion phase length of a transistor and fluctuations in a number of variables , active base width of the transistor . - Emitter Ballast Resistance: Sheet resistance of the doped , transistor dice (as many as six single-packaged transistor ) and the accompanying matched MOS capacitors
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AN569
"Phase Discriminator"
AM81214-060
AM82731-050
AN569
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
transistor study
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1999 - TV horizontal Deflection Systems mosfet
Abstract: TRANSISTOR REPLACEMENT GUIDE dtv32f15 flyback smps planar an363 electron gun CRT Flyback transformer planar BU508A DTV32F1500A horizontal transistor
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A
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16kHz
32kHz,
64kHz,
100kHz.
TV horizontal Deflection Systems mosfet
TRANSISTOR REPLACEMENT GUIDE
dtv32f15
flyback smps planar
an363
electron gun CRT
Flyback transformer planar
BU508A
DTV32F1500A
horizontal transistor
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bonitron
Abstract: m3775rk M3575T VFD for motors transistor product line manuals "variable frequency drive" "variable frequency drive" circuit Application Manual Power Modules vfd motor braking in ac motors
Text: M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK Resistive , Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · , 67hp / 50kW and Above Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard
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2008 - w32 transistor
Abstract: w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33
Text: Pull-up transistor control bit PU02 Pull-up transistor control bit PU01 Pull-up transistor control bit PU00 Pull-up transistor control bit PU12 Pull-up transistor control bit PU11 Pull-up transistor control bit PU10 Pull-up transistor control bit PU22 Pull-up transistor control bit PU21 Pull-up transistor control bit PU20 Pull-up transistor control bit REC05B0047-0200/Rev.2.00 455A Group at , retained 00002 P23 pull-up transistor OFF P23 pull-up transistor ON P22 pull-up transistor OFF P22
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M3455AG8FP
M3455AG8-XXXFP)
M34559G6FP
M34559G6-XXXFP)
M3455AGCFP
M3455AGC-XXXFP)
REC05B0047-0200/Rev
w32 transistor
w41 transistor
w33 transistor
transistor p31
transistor k33 34
transistor w32
ic 4559
transistor 4559
455a
transistor k33
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2006 - Buck-Boost Converter advantages
Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: topology and switching transistor * Only available in ISODRAIN package 8 PWM+CCM PFC CoolSET TM , Power Supplies SMPS Controller with very few peripheral components, using MOS Transistor , magnetic coupling C Cheap solution Disadvantages C Power transistor drain-source voltage VDS = VO > VI , , ICE3DS01 Forward Converter Single Transistor Forward Converter Single-ended Forward Converter Advantages C Demagnetizing the core is no problem C Simple circuitry Disadvantages C Power transistor
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B152-H8202-G4-X-7600
Buck-Boost Converter advantages
SPA11N80C3
ice1qs02
tda16846
CoolMOS Power Transistor
tda4605 application note
TDA4605-3
TDA16888
ICE1QS01 equivalent
transistor
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smd transistor marking 12W
Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
Text: transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor , - J Z L Electrode Connections Model 1 Emitter Transistor Drain 2SK208/209 2SK210/211 Gate 2 Base Source Drain 3 Collector Gate Source Fig. 1 Outline Drawing of the Super Mini Transistor 94 (2) Power Mini Transistor (SOT-89 equivalent) Figure 2 shows an outline drawing of the Power Mini Transistor . The molded plastic por tion of this unit is compact, measuring 2.8 mm (L) by 4.5 mm (W
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O-126
O-220
O-236
OT-23
O-220SM
O-22QSM
T0-220SM
smd transistor marking 12W
smd transistor 12W 3 pins
SMD transistor Marking 13w
transistor SMD 12W
TRANSISTOR SMD 13W
smd transistor 12W 98
transistor te 2305
smd transistor LY
smd transistor 12W
12W smd transistor
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2005 - LED DRIVER BY MC34063
Abstract: schematic diagram mc34063 constant current led MC34063 5v MC34063 driver led mc34063 MC34063 application mc34063 pwm led MC34063 Application Notes mc34063 pwm mc34063 flyback
Text: the best efficiency performance of bipolar transistor and diodes, Philips Semiconductors has , Step-down Regulator the switching waveforms for this regulator. Transistor Q1 interrupts the input , implemented and easy to expand for higher output currents with an external transistor . Further, this , . With built- in switch transistor , the MC34063 can switch up to 1.5 A current. But for higher output , transistor (s) Vin 0.15 8 7 6 5 1000uF DRc SWc Ipk SWe Vcc Ct FB Gnd 1
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AN10360
MC34063,
PBSS5320T,
PMEG2020EJ
LED DRIVER BY MC34063
schematic diagram mc34063 constant current led
MC34063 5v
MC34063 driver led
mc34063
MC34063 application
mc34063 pwm led
MC34063 Application Notes
mc34063 pwm
mc34063 flyback
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1999 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: Glossary of Microwave Transistor Terminology
Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types , transistor action. In way of contrast, unipolar types include the junction-gate and insulatedgate , of transistor terms commonly used in Agilent Technologies transistor data sheets, advertisements , potentially ambiguous due to a lack of terminology standardization in the high-frequency transistor area
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5966-3085E
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Glossary of Microwave Transistor Terminology
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2012 - J3305-2 y transistor
Abstract: No abstract text available
Text: Application Note AN01 - Transistor Testing Over the past decade, Elm Electronics has helped many , transistor pins are not usually marked. The following discussion shows how you might test NPN and PNP transistors in order to identify the three leads. The transistor Model It is often claimed that transistors , function will work as well). This type of test is based on the assumption that a transistor can be , an NPN transistor with symbol: C B E the test assumes a model that is simply two diodes
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2001 - "Phase Discriminator"
Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , techniques and computer-controlled wire bonding of the assembly. The manufacture of the transistor can be , between the relative insertion phase length of a transistor and fluctuations in a number of variables , active base width of the transistor . - Emitter Ballast Resistance: Sheet resistance of the doped , transistor dice (as many as six single-packaged transistor ) and the accompanying matched MOS capacitors
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AN569
"Phase Discriminator"
Hewlett-Packard transistor microwave
AM81214-060
AM82731-050
AN569
transistor study
rf power transistor
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1998 - Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor , Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor
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DS750
87C750
80C51
PZ3032-12A44
BUK101-50GS
BUW12AF
BU2520AF
16kHz
BY328
Zener Diode 3v 400mW
transistor bc548b
BC107 transistor
TRANSISTOR bc108
bc547 cross reference chart
Transistor BC109
DIAC OB3
DIAC Br100
74HCT IC family spec
TRANSISTOR mosfet BF998
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1998 - c102 TRANSISTOR
Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
Text: General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating , dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor The following , characteristic curves 490 Transistors IMX17 491 Transistors General purpose transistor , with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference
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94S-389-A41)
94S-398-C41)
FMG13
94S-849-A143T)
94S-877-C143T)
IMX17
2SD1484K
500mA
96-523-D15)
F04-C101)
c102 TRANSISTOR
c 548 c transistor
C107 transistor digital
c101 TRANSISTOR
C124* transistor
C114y
C124E
Transistors General
a124* transistor
C144E transistor
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2002 - MJ10100
Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power , Introduction The power transistor , in today's switching power supply, exists in an environment which is quite , impedance sources add up to something close to the worst of all possible worlds for the transistor . Given this type of environment, it is not surprising to find that keeping transistor stresses within , determined by the more subtle aspects of how stress imposed by the power supply relates to transistor safe
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AN875/D
r14525
MJ10100
all transistor
transistor Common Base configuration
AN875
transistor
on semiconductor AN875
K.S. Terminals
USE OF TRANSISTOR
MJ10021
fastest finger first
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2000 - 68HC12
Abstract: 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990
Text: metal-oxide semiconductor) transistor , minority carriers flow through the channel of the transistor and , layer. The following transistor cross sections help describe this process. These diagrams do not , Application Note CMOS transistor . Polysilicon is then deposited across the wafer, photo resist is applied as , is etched away, leaving only the polysilicon used to form the gate of the transistor . A ROM array , significantly different transistor characteristics. The importance of this difference is described in the
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AN1837/D
AN1837
68HC12
68HC16
AN1837
M68HC08
M68HC12
motorola embedded flash 1990
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2002 - Si3201
Abstract: Si321x AN47 ac proslic max 32Q1 0X0012 I321
Text: increases, so does the junction temperature of the transistor die. The maximum admissible junction temperature must not be exceeded because this could damage or destroy the transistor die. In the Si321x, the , corresponding indirect registers. If the power in any external transistor exceeds the programmed threshold , the power threshold is calculated based on the characteristic of the transistors used. Transistor manufacturers provide this information in terms of thermal resistance for each transistor package. The
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