MARKING SA TRANSISTOR Search Results

BC848F

Abstract: BC858F
Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F

BC848

Abstract: Transistor SA sot-23 BC858
Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank

bss123 marking sa

Contextual Info: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code

3V02

Contextual Info: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code

SOT-23 Product Code bss123

Abstract: DSS SOT23 marking 9a sot-23
Contextual Info: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA

Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Ordering number: EN 1857B 2SA 1438 N 0.1857B I PN P Epitaxial P lanar Silicon Transistor SA I YO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

Contextual Info: TOSHIBA 2SA1255 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2.5-0.3 High Voltage : V c b o = —200V (Min.) VCEO= —200V (Min.) Small Package Complementary to 2SC3138 •

D 1413 transistor

Abstract: KT 819 transistor
Contextual Info: Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions •Low noise : N F= l.0dB typ f= IG H z . •High gain : | S21 e 12=12dB typ (f= l GHz). •High cutoff frequency : fj=7GHz typ.

equivalent 2SC2655

Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA
Contextual Info: TOSHIBA {DI SC RE TE /O PT O} Sb D eT | TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)

TRANSISTOR 2108A

Abstract: 2108a 2108a transistor equivalent of 2108A transistor ic 2108a common collector PNP TR 2108A 2108a marking
Contextual Info: Ordering number: EN4698 FP215 No.4698 PNP Epitaxial Planar Silicon Composite Transistors SA\YO High-Frequency Amp, Differential Amp Applications i F eatu re s • Composite type with 2 transistors contained in the PCP package currently in use, improving the

2SD1624

Abstract: u 5601 2SB1124
Contextual Info: Ordering num ber: EN 2019A 2SB1124/2SD1624 NO.2019A SA VYÖ PN P/N PN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBIT, MBIT processes.

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

3079-2

Contextual Info: Ordering number: EN 3079 No.3079 SMiVO, F C l l l PNP Epitaxial Planar Silicon Composite Transistor i Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kQ • Composite type with 2 transistors contained in the CP package currently in use, improving the

BCW29R

Abstract: BCW30R SOT213 BCV72 BCW29 BCW30 BFQ31 BFQ31A ferranti SOT MARKING 213
Contextual Info: FERRANTI semiconductors BCW29 BCW30 PNP S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SOT-23 package these devices are designed sp e cifica lly fo r use in thin and th ick film

2SC4498

Abstract: 2SA1722
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 i Pin configuration

st zo 607

Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
Contextual Info: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.

Contextual Info: N^AMER PHILIPS/DISCRETE ObE D • fc.b53T31 0015503 3 BC807 BC808 r - x v n SILICON PLANAR EPITAXIAL TRAN SISTO RS P-N-P transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.

2sd444

Abstract: 2SD44 1SA16
Contextual Info: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product

MT4S03AU

Contextual Info: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)