MARKING SA TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

BC848F

Abstract: BC858F
Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F

BC848

Abstract: Transistor SA sot-23 BC858
Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank

Contextual Info: sa%yd Transistors Taping Packages below are available for automatic mounting. dk Example of marking : 2SC4641T-AA Contact sales offices for zigzag bended type of large box size. SANYO Electric Co. .Ltd. Semiconductor Business Headauarters. TR Division. 102

bss123 marking sa

Contextual Info: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code

3V02

Contextual Info: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code

Contextual Info: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code

SOT-23 Product Code bss123

Abstract: DSS SOT23 marking 9a sot-23
Contextual Info: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code

CSD1306

Contextual Info: CDU CSD1306 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA C K A G E O U TLIN E D E T A IL SA L L D IM EN SIO N S IN m m CSD1306E-6E _3.0_ 2.8 0.48 0.14 0.09 "031 Pin configuration JL 0.70 0.50 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4

SOT-23 marking 717

Abstract: SAP SOT23 sot-23 MARKING CODE 718
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Ordering number: EN 1857B 2SA 1438 N 0.1857B I PN P Epitaxial P lanar Silicon Transistor SA I YO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process

Contextual Info: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)

2SB560

Abstract: 2sd438 transistor 2SD438 2sb560 transistor transistor 2sd438 326H transistor 2sb560 2sd438 2sb560 2SD438 SANYO
Contextual Info: Ordering number: EN 326H 2SB560/2SD438 N 0.326H PNP/NPN Epitaxial Planar Silicon Transistors SANYO i Low-Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

Contextual Info: TOSHIBA 2SA1255 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2.5-0.3 High Voltage : V c b o = —200V (Min.) VCEO= —200V (Min.) Small Package Complementary to 2SC3138 •

Contextual Info: SyrnSEM i SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5551LT1 TRANSISTOR NPN FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage V ( b r ) cbo : 180 V Operating and storage junction temperature range

Contextual Info: Central CM PT4401 NPN C M PT4403 PN P Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The C E N T R A L S EM IC O N D U C T O R C M P T4401, CM PT4403 types are com plem entary silicon tran sisto rs manufactured by the epitaxial planar process,

ic LA 7841

Abstract: LA 7841 LG 7CA 2005A transistor sc 308 2SD1145 784E S/LG 7CA
Contextual Info: Ordering number: EN 7 8 4 E 2SD1145 i SA t YO NPN Epitaxial P lanar Silicon Transistor High-Current Driver Applications A p p licatio n s . Relay drivers, ham m er drivers, lamp drivers, strobe DC-DC convertrers, motor drivers. F e a tu re s • Low saturation voltage

Contextual Info: T O SH IB A 2SA1162 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. U nit in mm + 0.5 2 . 5 - 0.3 • High Voltage and High Current : V c E 0 - —50V, I C = - 150mA (Max.) + 0.25