MARKING S61 Search Results

STS 75 SOT23

Abstract: marking BSs sot23 E6327 Q62702-S612 STS SOT
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● VDS 250 V ● ID 0.04 A ● RDS on 100 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;

BSS139

Abstract: E6327 Q62702-S612 BSS139 SOT23 diode sot-23 marking AG MARKING CODE br 13 SOT23
Contextual Info: BSS139 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS on ,max 30 Ω I DSS,min 0.03 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS139 SOT-23 Q62702-S612

Contextual Info: BSS89 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level * W = ° - 8- 2 0 V Type Vbs t flDS on) Package Marking BSS89 240 V 0.3 A en TO-92 SS89 Typ* BSS89 BSS89 BSS89 Ordering Code Q62702-S519 Q62702-S619

e7941

Abstract: Q67000-S221 E6327 Q62702-S612
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;

E6327

Abstract: E7941 Q62702-S612 Q67000-S221 STS SOT
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 139 VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;

SS89 transistor

Abstract: BSS89 s 89
Contextual Info: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.3 A B S S 89 240 V Type B S S 89 B S S 89 B SS 89 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 ffDS(on) 6Q Package Marking

tr 30 f 124

Abstract: SS124
Contextual Info: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 5 - 2-5 v Pin 1 Pin 2 Type BSS 124 VDS 400 V b 0.12 A Type BSS 124 BSS 124 Ordering Code Q62702-S614 Q67000-S172 flDS(on) 28 Q Pin 3 D G Package Marking TO-92

Vishay DaTE CODE 1206-8

Contextual Info: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability

Si5904DC

Contextual Info: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability

74416

Abstract: TSC75-6L
Contextual Info: Package Information Vishay Siliconix PowerPAK TSC75-6L Power IC only D1 Exposed pad e b D Pin4 Pin 5 Pin6 K E PPAK TSC75 (1.6 x 1.6 mm) E1 Exposed pad K L Pin3 Pin 2 Pin1 e1 K2 Pin 1 Dot By Marking K2 Top View Bottom View A C A1 Side View MILLIMETERS

Contextual Info: V ie w on mating side c j r o ^ T L n u 3 i ^ o o n O ' _ C M r o ' ^ r L n u D r - a o c n O ' - CMm' ^r Lnkf l r ^aoc nO' ^<\ i CM^CMCMCMCMCMCMOslCNIrO^rO 16 s t a n d a r d contacts L=4,5 Marking Standard P e r f o r m a n c e level GI/0 = C o n t a c t a r e a level I / Te rm in a tio n tin

T60405-S6123-X316

Abstract: 6123-X316
Contextual Info: DATENBLATT / Specification Sach Nr.: K-Nr.: 25610 K-no.: Kunde: Customer T60405-S6123-X316 Item no.: VAC UUM SCH M ELZE Stromkompensierte Drossel / Common Mode Choke Typenelement / Standard type Datum: 21.06.2012 Date: Kd. Sach Nr.: Seite Customers part no.:

k2564

Abstract: s4 63a
Contextual Info: DATENBLATT / Specification Sach Nr.: K-Nr.: K-no.: 25645 Kunde: Stromkompensierte Drossel / Common Mode Choke Typenelement / Standard type Customer T60405-S6123-X363 Item no.: VA CUU M SC HM ELZE Datum: 15.02.2010 Date: Kd. Sach Nr.: Seite Customers part no.:

Q62702-S615

Abstract: ss296 BSS296 Q62702S615
Contextual Info: SIEMENS BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 296 VDS 100 V Type BSS 296 BSS 296 Ordering Code Q62702-S615 Q67000-S217 b 0.8 A ffDS(on) 0.8 Q Pin 3 D Package

Contextual Info: Formosa MS Chip Schottky Barrier Rectifier FM620-T1 THRU FM6100-T1 List List. 1 Package outline. 2

Contextual Info: Formosa MS Chip Schottky Barrier Rectifier FM620 THRU FM6100 List List. 1 Package outline. 2

DG2612

Abstract: DG2612DX-T1-E3 DG2613 DG2613DX-T1-E3 HP4192A SC-89
Contextual Info: DG2612/2613 Vishay Siliconix Low-Voltage, Low rON, SPDT Audio Switch with Negative Swing Capability DESCRIPTION The DG2612/2613 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative signal swing capability. It is designed for low

Si1407DL

Abstract: Si1407DL-T1 Si1407DL-T1-E3 A.4 SOT363
Contextual Info: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available

Si2305DS-T1-E3

Abstract: SI2305DS-T1 / A5 Si2305DS Si2305DS-T1
Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT

Si2331DS

Contextual Info: Si2331DS Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • TrenchFET Power MOSFETS Pb-free APPLICATIONS

Contextual Info: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available

a5 marking

Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free