MARKING P1A Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

VP2110N3

Abstract: VP2106 VP2106N3 VP2106ND VP2110 VP2110K1 VP2110ND 944 SOT23
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 DICE† TO-236AB* Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 VP2106ND - P1A❋ -100V 12Ω

VP2106

Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A

Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A

VP2110

Abstract: VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — VP2106ND P1A❋ -100V 12Ω

SOT23 marking GF

Abstract: xl sot-23 marking p1a sot-23 marking code SD SOT23 VP2110K1 P1A SOT23 SOT-23 Marking code p1A
Contextual Info: VP2110 ^ S u p e r t e x in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices ^D S O N b v tcs (max) -100V 12£i Product marking tor SOT-23: Order Number / Package If BVDSs ! -0.5A SOT-23 P1A* VP2110K1 where * = 2-week alpha date code

RT50800006

Abstract: PVC-45P
Contextual Info: REVISIONS The marking on this product doesn’t contain environmental hazardous, materials per directive 2011/65/EU for RoHS compliant. ECN NO. REV. DESCRIPTIONS REL. AX1 INITIAL RELEASE CHECKED APPROVED DATE AARON DAVID 12 /2 7/2 012 NOTE: THIS CABLE SHOULD BE PASSED BY 6G TEST

VP2106

Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† -60V 12Ω -0.5A VP2106N3 — — -100V 12Ω -0.5A — VP2110K1 VP2110ND Product marking for SOT-23:

Contextual Info: VP2106 VP2110 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON ^D(ON) b v dgs (max) (min) TO-92 TO-236AB* Diet -60V 12& -0.5 A VP2106N3 — — -100V 12& -0.5 A — VP2110K1 VP2110ND Product marking for SOT-23:

GP1A05HR

Abstract: GP1A22HR GPIA05 photointerrupters B3P-SHF-1AA P1A05 SHF-001T B3P-SHF-IAA GP1A05 OPIC Photointerrupter
Contextual Info: SHARP ELEK/ MELEC D IV I 01807=10 0 0 0 301a 4 . ^ I P1A 05HR/G P1A22HR Photointerrupters T -4 1-7 3 GP1A05HR/GP1A22HR • Unit : mm O utline Dimensions Features 1. 3-pin connector terminal 2. High sensing accuracy (Slit width: 0.5mm) 3. Wide gap between light emitter and detec­

A05HR

Abstract: GP1A05HR GP1A22HR
Contextual Info: SHARP GP1A05HR/GP1A22HR OPIC Photointerrupter with Connector GP1A05HR/GP1A22HR • Features 1. 3-pin connector-terminal 2. High sensing accuracy Slit width : 0.5mm 3. Wide gap between light emitter and detec­ tor ( 5m m ) !Outline Dimensions G P1A 05HR

Contextual Info: Socket connector Plug connector Kat 1 i POA No. of pos. Kat 1 i P1A A -0 ,7 6 B C - 0,25 No. of pos. A -0 ,7 6 g + 0,25 C D - 0,30 15 31,19 16,46 25,00 * o''.I 15 31,19 16,79 2 5 ,0 0 :5,i5 6,12 26 39,52 24,79 33,30 *S;1S 26 39,52 25,12 33,30 6,12 44 53,42

MCP43X1

Abstract: transistor p2w MCP43XX MARKING R2W PIC10F206 MCP43X2 marking P2W 20L-TSSOP 435X mcp4x
Contextual Info: MCP433X/435X 7/8-Bit Quad SPI Digital POT with Volatile Memory MCP43X1 Quad Potentiometers TSSOP P2A P2W P2B VDD SDO RESET NC P0B P0W P0A 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 P3A P3W P3B CS SCK SDI VSS P1B P1W P1A P2B P2W P2A P3A P3W MCP43X1 Quad Potentiometers

transistor p2w

Contextual Info: MCP433X/435X 7/8-Bit Quad SPI Digital POT with Volatile Memory MCP43X1 Quad Potentiometers TSSOP P2A P2W P2B VDD SDO RESET NC P0B P0W P0A 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 P3A P3W P3B CS SCK SDI VSS P1B P1W P1A P2B P2W P2A P3A P3W MCP43X1 Quad Potentiometers

E142 wafer format

Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
Contextual Info: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved”

Contextual Info: Æ T S G S -T H O M S O N ^ 7 # R LUGTIfiiOTIO POIxxxN SENSITIVE GATE SCR FEATURES = 0.8A - Vdrm = 100V to 400V • Low Ig t < 200 |aA ■ It r m s DESCRIPTION The POIxxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high

PO102A

Abstract: po102 MARKING SG SOT223 P0111AN P0109DN SOT223 marking SG P0102CN P0109AN HA2001
Contextual Info: r r z ^ 7# S G S -T H O M S O N RfflDOœiHitSiriHiOiDOS POIxxxN SENSITIVE GATE SCR FEATURES • It rms =0.8A ■ V drm = 100V to 400V ■ Low I g t < 200 jiA DESCRIPTION The POIxxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended tor general purpose high

JIS B 0041

Abstract: P0109AL p5A MARKING p0102b P0111 P0102AL P0102BL P0102CL P1A marking sot23 P0109BL
Contextual Info: SGS-THOMSON iMœ [iL[i@¥[HMQra po i xxxL SENSITIVE GATE SCR FEATURES = 0.2A = 100 V to 400V • Low Ig t < 1|uA max to <200|j,A ■ It rm s ■ V drm DESCRIPTION The POIxxxL series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high

p5A MARKING

Abstract: transistor P9d p0102b scr Igt 1mA p9d sot23 P0115AL Marking 0E MARKING P5D rgk 13 1 11 005 01
Contextual Info: P01xxxL  SENSITIVE GATE SCR FEATURES IT RMS = 0.2A VDRM = 100V to 400V Low IGT < 1µA max to < 200µA A G K DESCRIPTION The P01xxxL series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high volume