MARKING N6 TRANSISTOR Search Results

Contextual Info: DRC4143X Tentative Total pages page DRC4143X Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N6 Package Code : NS-B1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRC4143x

Contextual Info: DRC4143X Tentative Total pages page DRC4143X Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N6 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRCF143X

Contextual Info: DRCF143X Tentative Total pages page DRCF143X Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N6 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23

SOT23 W1P

Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
Contextual Info: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X

BFG540 N43

Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE

n7 transistor

Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

DDTA144ELP

Abstract: DDTC144ELP DDTC144ELP-7 DFN1006-3 marking K
Contextual Info: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes

Contextual Info: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

NGA-686

Abstract: N6 Amplifier marking N6 mmic amplifier marking n6 marking n6 transistor HBT marking P MMIC N6
Contextual Info: Preliminary Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

NGA-686

Contextual Info: Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

marking n6 amplifier

Abstract: SIRENZA MARKING
Contextual Info: Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

SIRENZA MARKING

Contextual Info: Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

NGA-689

Abstract: 4n63
Contextual Info: Preliminary Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

N6 marking code

Abstract: marking 210 N6 Amplifier amplifier marking code n6 marking n6 amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1
Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 2 2 BASE 1 EMITTER 1 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

N6 marking code

Abstract: marking n6 transistor N6 Amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1 amplifier marking code n6 marking n6
Contextual Info: NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 1 2 BASE 1 EMITTER 2 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous

Contextual Info: TOSHIBA HN3C02F h n 3r n i F TOSHIBA TRANSISTOR • ■ ■ SILICON NPN EPITAXIAL PLANAR TYPE 'm mm ■ Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. +0.2 2 .8 - 0.3 • • +0.2 1.6-0.1 Including Two Devices in SM6 Super Mini Type with 6Leads

Contextual Info: TOSHIBA HN3C03F TOSHIBA TRANSISTOR hn SILICON NPN EPITAXIAL PLANAR TYPE • 'm ■ ■ 3 mm r n3 F ^ur v ■ Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. +0.2 2 .8 - 0.3 • • +0.2 1.6-0.1 Including Two Devices in SM6 Super Mini Type with 6Leads

smd transistor marking n5

Abstract: smd transistor n6 N5 smd transistor N5 N6 SMD Transistor MARKING SMD TRANSISTOR sot-23 Marking N5 N5 npn transistor pd smd 2SC1654 N7200
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1654 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High voltage VCEO : 160V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2SC1654

Abstract: N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor
Contextual Info: 2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE   High Frequency Power Amplifier Application Power Switching Applications A L 3 3

Contextual Info: SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ・With Built-in Bias Resistors. E B L L ・Simplify Circuit Design. D ・Reduce a Quantity of Parts and Manufacturing Process.