MARKING LAE Search Results

1721E50R

Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Contextual Info: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking

hilton capacitors

Contextual Info: W E 7 TANTALUM CAPACITORS SWT SERIES DIMENSIONS AND TOLERANCE Dimension "d" - 0.020 ± 0 . 002’ 0.5±0.05mm Dimension "LL" 1.5 ±0.06" (38.1 ±1.6 mm) Tolerance on Diameter "D" - ±0.005" (±0.13 mm) Tolerance on Length “L" - ±0.015" (±0.38 mm) Part Marking Information

siemens SFH nm

Abstract: TCA 700 y C120 GPL06724 GPL06880 SFH4290 SFH4295
Contextual Info: - A n SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4290 SFH 4295 Vorläufige Daten / Preliminary Data 3.0 CM 1 ^ CO O Q. SFH 4290 GPL06724 Collector/Cathode marking rto 00 C oD Q. SFH 4295 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

EN 61210

Abstract: 61058 EN61210 400M0E3 50E3 T100 61210 MARQUARDT
Contextual Info: 35.7 ±0-6 16 ± ! 0.3 ±0.25 CD • E& l O +1 r- oo Flachstecker plug-in 1 11 1 11 - ^ CM <=> +1 i_n 6,3 x 0,8 EN 61058 / EN 61210 / DIN 46244 A-A B-B 2:1 2:1 +0.14 3 . 4 _ o j x 3I§ :^ + 0.02 NC NO AuFschri Ft Marking 1006 ji Wechsler 1-polig single pole changeover

opel connectors

Contextual Info: 16 15 14 13 12 ii 10 9 a 5 3 2 1 K J .£=1=1 H x= zu Materiaikennzeichnung MATERIAL MARKING LIefenzustand S p a c e r In V o r r a s t s t e . 0 . 4 . 8 MM F E M A L E TERM. C O N D I T I O N BY D E LIVERY S P A C E R IN P R E L O C K E D P O S I T I O N

capacitor 0.01 k 630 MKT

Abstract: MKT 373 EB capacitor 373 MKT length 0.068 MF CAPACITOR MKT GF500 GL-300 capacitor MKT capacitor 0.022 k 630 MKT pitch 15 capacitor 0.015 k 400 MKT
Contextual Info: MKT 373 M Mini Vishay BCcomponents DC Film Capacitor MKT Radial Potted Type l FEATURES w RoHS compliant 10 mm to 27.5 mm laed pitch Supplied loose in box, taped on ammopack or reel h ENCAPSULATION Flame retardant plastic case and epoxy resin (UL-class 94 V-0)

Contextual Info: laeprofile t 2l COMFATIBL Thinny DIP SQUARE WAVE GENERATOR MODULE Full M ilitary temperature range T2|_ input and output O utput wavetrain can be started in sync w ith o u tp u t b u ffe r w ill add one propagation delay to all tim es . This feature allows the in itia tio n o f a tim in g wavetrain w ith the origin

Contextual Info: Thick Film High Voltage Lead-Free Chip Resistors Standard Halogen-Free Document No. TRH-XX0S001I Revise Date 2012/07/04 page number 1/10 1. Scope : This specification applies for thick film high voltage Laed-Free chip resistors made by TA-I. Conductor Over Coat (Color : Green)

Analog devices assembly code marking Information

Contextual Info: wmLEM h n PA H ECK w LAE RT DT Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • Surface Mount SOT-323 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time)

IEC-134

Abstract: IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking
Contextual Info: 7^ 3 / " / ^ LAE6000Q M AINTENANC E TYPE PHILIPS INTERNATIONAL 5bE J> 711Qfi5t, D04blflQ OOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN transistor fo r common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,

Contextual Info: MOTOROLA SC XSTRS/R F laE D M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 12 Vdc 'c 500 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Ro ja 556 °c/w Pd 300

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LAE4002S FEATURES PINNING -SOT100 • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile

LAE4001R

Abstract: SC15 MGL069
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.

Contextual Info: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

BP317

Abstract: LAE4002S SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4002S

SOT-100

Abstract: BP317 LAE4001R SC15 transistor jc 817 sot100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R

MARKING CODE R7

Abstract: IEC134 LAE6000Q SOT-100
Contextual Info: 1I N AMER P H I L I P S / D I S C R E T E JDbE D • ^ 5 3^31 5 ■ LAE6000Q r-3 |-i5 r LOW-NOISÉ MICROWAVE TRANSISTOR N-P-N transistor fo r com m on-em itter class-A low-noise amplifiers up to 4 G H z. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,

IEC134

Abstract: LAE4002S
Contextual Info: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 81CXXX/81NXXX VOLTAGE DETECTORS WITH BUILT-IN DELAY CMOS IC 1 1 DESCRIPTION The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption.

Voltage Detector SOT-89 marking

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 81CXXX/81NXXX CMOS IC VOLTAGE DETECTORS WITH BUILT-IN DELAY 1 1 DESCRIPTION The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption.

LD33 VOLTAGE REGULATOR

Abstract: LD33 regulator LD33 VOLTAGE REGULATOR 3.3v LD33 SOT 223 LD33 LD33 SOT223 Analog Marking Information LD50 VOLTAGE REGULATOR LD33 marking SOT223 marking ld33
Contextual Info: Packaging for Automatic Handling — Tape & Reel General Description Tape & Reel Surface mount and TO-92 devices are available in tape and reel packaging. Surface mount components are retained in an embossed carrier tape by a cover tape. TO‑92 device leads are secured

Contextual Info: UNISONIC TECHNOLOGIES CO., 81CXXX/81NXXX VOLTAGE DETECTORS WITH BUILT-IN DELAY CMOS IC 1 1 DESCRIPTION The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption.