MARKING E 1N DIODE Search Results

diode pj 916

Abstract: IC la 4148
Contextual Info: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

BD1501

Contextual Info: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B

1N4770

Contextual Info: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol

IN5230B

Abstract: 5246B 1n 5252b zener 5242B 1N5000 5232b 1N5248B 1N5000 SERIES
Contextual Info: 1N5000B series Diodes, Zener, 500 mW, leaded These glass-sealed Zener diodes are suitable for lead mounting on printed circuit boards. They can be used to regulate voltages between 4 and 24 V. Dimensions Units : mm CATHODE BAND <£ 0 . 5 ± 0 . I Features

IN3155

Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Contextual Info: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values

diode 4483

Abstract: 1N4471
Contextual Info: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.

1N1183

Abstract: 1N3768
Contextual Info: SCS-THOMSON 1N 1183/84/1N 1186 —> 90 1N 3766/1N 3768 [» [H i [i[L Œ O T 2 *S RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORW ARD VOLTAGE DROP A B S O L U T E R A T IN G S (limiting values P aram e ter Value Unit

Contextual Info: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 M¡erosemi Corp. j ' The dtOOe experts SCOTTSDALE, 4 / ☆JANS^ 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • M ic ro m in ia tu re packag e. H ig h p e rfo rm a n c e characteristics. S ta b le o p era tio n at te m p e ra tu re s to 2 0 0 ° C .

1n939

Abstract: 939AB 939B 1N935 935A 1n938 1N937 938a N937 N935B
Contextual Info: SbE ]> • 7^237 0 0 4 1 5 2 ? 604 ■ SG TH SGS-THOMSON -f-lj-f/ 1N 935,A,B 1N 939,A,B [» K IL iO T « ! S G S- TH O n S O N TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING A B S O LU TE R ATING S limiting values

Js SMD MARKING CODE SOT23

Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
Contextual Info: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003

Contextual Info: rz 7 SGS-THOMSON ^ 7 # [M û[M iajO T ô*S 1N 3 1 5 4 , 1 N 3157,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING s - " ' DO 35 (Glass) A B S O L U T E R A TIN G S (limiting values)

1N4565

Abstract: IN4568 1n4573 45B4 IN4583A 1n4572 4566A
Contextual Info: SbE ] • 7 T ST E3 7 0 0 4 1 5 3 4 T44 ■ SGTH s 6 s-thohson S G S -T H O M S O N 1 N 4 5 6 5 ,A -> 1 N 4 5 8 4 ,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values)

1N1341

Abstract: 1N3988 1348B 1346b 1341B 1344B
Contextual Info: SGS-THOMSON 1N 1341B/42B/1N 1344B -4 48B 1N 3988/1 M 3990 RECTIFIER DIODES • STANDARD RECTIFER . HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP A B S O L U T E R A TIN G S limiting values Unit V alu e P aram e ter Symbol A verage F o rw ard C urrent*

IN4370A

Abstract: IN751a in749a IN4370 IN759A IN4372 IN751 in748a Zener Diode 12v 400mW 1N4372
Contextual Info: s t c d | THOMSON 7 ^ 2 3 7 a o a a T r .tt-o * ! Q THOMSON-CSF DIVISION SEMICONDUCTEURS - IN 4370 A — 1N 4372 A IN 746 A — 1N 759 A • ^ 59C 0 2 4 1 3 ZENER DIODES DIODES ZENER D Ptot = 4 0 0 mW 2 ^ V < V z T n o n i< 1 2 V 400 m W hermetically sealed glass silicon Zener

1n4148

Abstract: 1n916 1N4606 1N4150 diode 1N916 1n4148 general diode 1n4153 914-R
Contextual Info: 1N4148 1N914 1N916 1N4150 1N4153 1N4448 1N4606 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 . 5 ± 0.1 Features • available in DO-35 package

1N3496

Abstract: Thomson-CSF semiconductor GE-229 1N3498 1N3499 1N3500 IN3600 diodes de regulation de tension IN3496
Contextual Info: S G S'ÏC S —THOMSON ' € D I 7 ^ 2 3 7 0002540 O THOMSON'CSF * 1N 3496- ^ 1 N 3500 DIVISION SEMICONDUCTEURS VOLTAGE REFERENCE DIODES TEMPERATURE COMPENSATED D IO D ES D E R É FÉR EN CE D E TEN SIO N (CO M PEN SÉES EN TEM PÉRATU RE) EPI Z 59C Û2540

T 4148

Abstract: in 4148 MARKING a1n bav 56 lN4148 marquage a7 A7 marking BBY31 dual 4148 SOT-23 4148
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID C IR C U IT S COMPOSANTS A C T IF S POUR C IRC U ITS H Y B R ID E S Planar silicon diodes Diodes planar au silicium Type Marking Typa Marquage i l VR V 'o (m A ) VF / (V ) / ü 'f (m A ) max ♦ Ir / (MA) / ' VR (V )

Contextual Info: SbE D • DD4177Ô SCS-THOMSON 03Ö ■SGTH 1 N 1341B/42B/1N 1344B - ly M M O iO ß S 48B 1N 3988/1M 3990 S G S-TH0MS0N T - o t - n RECTIFIER DIODES ■ STANDARD RECTIFER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values

1N4868

Abstract: lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N483B 1N485B 1N486B
Contextual Info: 1N483B-1N486B 1N51I94-1N5196 «¡erosemi Corp. GENERAL PURPOSE SILICON DIODES FEATURES • • • • Voidless hermetically sealed glass package. Triple layer passivation. Metallurgically bonded. TX types available per MIL-S-19500/118C. ABSOLUTE M A XIM U M RATING S

IN2976

Abstract: IN2980 in2990 1N2970B IN3011 IN2974 Thomson CSF ET 3005 1N2970BR IN3015b
Contextual Info: STC D I S G S—THOMSON 59C Q T H O M S O N - C S F 7^123? D 0 2 42 2 . 1 N 2 9 7 Q B DIVISION SEMICONDUCTEURS 00Q2M22 T — T'H-O* 1 N 3 0 1 5 B ZENER DIODES DIODES ZENER •% f Ptot — 10 W 10 W silicon Zener diodes : • • 6,8 V < V z j nom ^200 V Hermetically sealed metal according t o '

Contextual Info: 5 bE D • 7=12=1237 G G 4 1 7 7 b SCS-THOMSON [M O ^ a m tK g lM K S 2bS ■ SGTH 1N 1183/84/1N 1186 -> 90 1N 3766/1N 3768 G S-THOMSON s T - O h H RECTIFIER DIODES ■ STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values

1N248B

Abstract: 1196-A RN820 1N1198
Contextual Info: e r e T t in iic n u olio-1 numoiiN 248 b -» i n 250 b 1N1N^gs A 1N1198 A l* ^ [i[L i ïï^ ® * S RN 820/R N 1120 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values

1198A

Abstract: 1196-A RN820
Contextual Info: Gl 1N 248 B -» 1N 250 B 1N 1195 A -> 1N 1198 A RN 820/RN 1120 SGS-THOMSON tUEOTlEiMOSS S G S-THOnSON RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values Value Unit Average Forward Current*

Z808

Abstract: Z226 ANA 608 MZ210 1N5105 marking 1n diode MZ80 845MZ Zener 224 Z860
Contextual Info: 1N 5063 - 1N5117 M Z 806 - M Z 890, MZ 210 • MZ 2 4 0 Mierosem i Corp. diode experts SANTA ANA, CA SCOTTSDALE, A Z / For m ore inform ation call: 714 979-8220 3-WATT G USS ZENER DIODES FE A TU R E S • • • • • • • Microminiature package.