MARKING CODE S2A SOT23 Search Results

s2A SOT23

Abstract: marking s2A sot23 SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

TRANSISTOR S2A

Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

transistor marking s2a

Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

transistor marking S2A

Abstract: SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

H12E

Abstract: h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e
Contextual Info: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906

H12E

Abstract: h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT
Contextual Info: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906

3906

Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

marking code s2a SOT23

Abstract: smbt3906 MMBT3906 infineon
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

s2A SOT23

Abstract: SOT-23 marking S2A
Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm • PNP epitaxial silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = -40V 0.103(2.60) • Collector current IC = -200mA

s2A SOT23

Contextual Info: MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

Contextual Info: MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

MMBT3906_R2_00001

Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

LTYB

Abstract: ltc833 LTYB MARKING non electrolytic capacitor esl esr
Contextual Info: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA

LTC1429

Contextual Info: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA

LTC1983-5

Abstract: JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 Step-up 1.2V to 3V 60mA SOT-23 Vin 12v charge pump sot LTC1429
Contextual Info: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA

LTC1429

Abstract: FET MARKING MO sot-23 ltc833 LTC1983ES6-5
Contextual Info: Final Electrical Specifications LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT August 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy

JMK316BJ106ML

Abstract: LTC1983-3 LTC1983-5 LTC1983ES6-3 LTC1983ES6-5 "marking s1a" sot-23 LTC1429
Contextual Info: Final Electrical Specifications LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT August 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy

marking code S6 SOT-23

Abstract: LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 LTC1429
Contextual Info: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA