MARKING CODE J111 Search Results

TO-236 MARKING CODE C3

Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS

J111

Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

J113 equivalent

Abstract: J113 AN105 J111 J112 SST111 SST112 SST113 V31005
Contextual Info: J/SST111 Series Siliconix NĆChannel JFETs J111 J112 J113 Product Summary SST111 SST112 SST113 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 J/SST111, For applications information see AN105, page 22.

J111

Abstract: J112 J113 SST111 SST112 SST113 marking code J111 device code J111
Contextual Info: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications

SST111

Abstract: J111 J112 J113 SST112 SST113 device code J111
Contextual Info: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications

to236

Abstract: 37652 Siliconix N-Channel JFETs J/SST113 J113 equivalent marking j112 SST111 C1 AN105 J111 J112
Contextual Info: J/SST111 Series N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 J/SST111, For applications information see AN105, page 1.

SST113

Abstract: SST112 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

marking code J111

Abstract: J113 equivalent c3 marking J/SST113 SST111 C1 to236 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

J112 jfet

Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

j112

Abstract: j112g J111
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Contextual Info: OD CO O CO RATING VO LTAG E 50V AC CURRENT 0. 3A co o APPLICABLE CONNECTOR O o O + CD STORAGE TEMPERATURE RANGE —1 o -35°C TO +85°C NOTES 1 1 OPERATING TEMPERATURE RANGE O o O A P P L IC A B L E S T A N D A R D D F17#(*) -*D S-0. 5V (*) SPECIFICATIONS

transistor J111

Abstract: transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet BSR58LT1
Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

z1834

Abstract: BSJ111 BSJ113 Z183 Philips TO-92 MARKING CODE 3150si BSJ112 J111 J112 J113
Contextual Info: • BSJ111 BSJ112 BSJ113 ^ 53=131 0017553 4 N AMER PHILIPS/DISCRETE 5SE D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.

Contextual Info: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

DELTA fan bfb

Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

BSR58LT1

Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50

application note jfet J111 transistor

Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

application note jfet J111 transistor

Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
Contextual Info: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

2N5458

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.