MARKING CODE FCB Search Results

BC 170 transistor

Contextual Info: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration

5Cs transistor

Abstract: transistor 5bs 5BS transistor
Contextual Info: SIEMENS BC 807W BC 808W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C

BC 170 transistor

Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
Contextual Info: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W

Contextual Info: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M

Contextual Info: SIEMENS BCR 196W PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=47kfl, R2=22kiî WXs UPON INQUIRY 1 =B Package o BCR 196W Pin Configuration II CO Marking Ordering Code III II CM

Contextual Info: S IE M E N S BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1 =B Package

Contextual Info: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W

Contextual Info: BCX69 PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: B C X 68 NPN Type Marking Ordering cod* (or versions In bulk Ordering code for versions on 12 mm-tape

Contextual Info: BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R-| = '\0kQ, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183W WMs Q62702-C2276 1= B Package 2= E 3=C SOT-323

Contextual Info: SIEMENS BCR 158 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor Ri=2.2ki2, R2=47k£2 □ Pin Configuration Q62702-C2338 1 =B Package II CO WIs O Marking Ordering Code BCR 158 LU II

Contextual Info: BCR 119W NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=4.7k£2 c FI 4 Tr Type Marking Ordering Code Pin Config uration BCR 119W WKs 1= B Q62702-C2285 Package 2= E 3=C SOT-323

Contextual Info: BCR 192W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=22k£2, R2=47k£2 c FI □ ill Type Marking Ordering Code Pin Confic uration BCR 192W WPs 1= B Q62702-C2282 Package 2= E

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=10ki!, R2=47kii Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23

ON Semiconductor marking 821

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23

IDT CODE DATE marking FORMAT

Abstract: 89HPES24T6G2ZCALG IDT CODE DATE marking 89HPES24T6G2ZCALGI 89HPES16T4AG2ALGI 89hpes16t4ag2zcalg 89HPES24T6G2ZBALI8 89HI0524G2PS 89HPES6T6G2Z 89HPES16T4AG2
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: TB0905-02 DATE: 29-May-2009 Product Affected: 19mm x 19mm FCBGA-324 Date Effective: Contact: Title: Phone #: Fax #: E-mail: MEANS OF DISTINGUISHING CHANGED DEVICES:

epson MARKING CODE

Abstract: TQS-530S-7G 535AB TOYO crystal toyocom crystal filter
Contextual Info: SAW Filter SAW FILTER FOR CELLULAR / RF TQS-530S-7G /-516EA-7G TQS-535AB-7G /-539A-7G •Miniature size and low profile using FCB technology •Balanced termination type and unbalanced termination type are available. •Lead Pb -free : Lead free completely

sd 20n60

Abstract: FCB20N60
Contextual Info: SuperFET TM FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

11N60

Abstract: MOSFET 11N60 11n60 dc
Contextual Info: SuperFET TM FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

HEL16

Abstract: DEVICE MARKING CODE table onsemi marking marking code onsemi marking code onsemi Diode kel33 on semiconductor traceability marking soic HEL32 HEL12 HEL31 HEL05
Contextual Info: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and

KLT20

Abstract: k1648 klt22 KEL32 MC100 HEP64 KLT21 LP17 KEP32 HEP139
Contextual Info: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and