MARKING CODE DIODE WP Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

smd diode code WP

Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Contextual Info: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

diode rectifier siemens

Contextual Info: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type

Contextual Info: Product specification WPM2341A P-Channel Enhancement Mode Mosfet Features z Higher Efficiency Extending Battery Life z Miniature SOT23-3 Surface Mount Package z Super high density cell design for extremely low RDS ON 3 1 Applications 2 zDC/DC Converter

WPM3407

Contextual Info: Product specification WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Description The WPM3407 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product

Contextual Info: Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS V -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)

W32 MARKING

Abstract: w32 transistor
Contextual Info: Product specification WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS V -30 Rds(on) (ȍ) 0.058@ VGS=10V 0.080@ VGS=4.5V SOT-23 Descriptions D 3 The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)

marking W26 sot23

Abstract: transistor w26 sot23 transistor marking w26 marking CODE w26
Contextual Info: Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS V Rds(on) (ȍ) 0.056@ VGS=̢4.5V 0.069@ VGS=̢2.5V -20 0.086@ VGS=̢1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced

FB4410Z

Abstract: FB4410
Contextual Info: IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Transistor W35

Contextual Info: Product specification WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET VDS V Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V -30 0.083@ VGS=̢4.5V 0.083@ VGS=̢4.5V SOT-23-3L Descriptions D 3 The WPM3005 is P-Channel enhancement MOS Field Effect Transistor.

diode w8 sod123

Abstract: BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1
Contextual Info: Surface mount zener diode FEATURES Pb z Planar die construction. 500mW power dissipation on ceramic PCB. General purpose, medium current. z Ideally suited for automated assembly processes. z z BZT52C2V4-BZT52C51 Lead-free APPLICATIONS z Zener diode. z Ultra-small surface mount package.

Contextual Info: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V

H 48 zener diode diagram

Abstract: zener diode code c22 C18 zener c27 zener diode diode zener WP zener C27 SOT23 Zener diode WD diode wg SOT-23 diode zener WL zener c22
Contextual Info: SENSITRON SEMICONDUCTOR BZX84C2V4 – BZX84C39 350mW SURFACE MOUNT ZENER DIODE Data Sheet 2597, Rev. –  Features
! ! ! ! ! ! Planar Die Construction L 350mW Power Dissipation 2.4 – 39V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application

Contextual Info: Formosa MS SMD Zener Diode BZT55 Series List List. 1 Package outline. 2 Features. 2

BZT52C15S

Contextual Info: PRELIMINARY BZT52C2V7S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data •

BZT52C2V4

Abstract: BZT52C2V7 BZT52C39 BZT52C3V0 BZT52C3V3 BZT52C3V6 J-STD-020A marking code zener diode wl DS18004
Contextual Info: BZT52C2V4 - BZT52C39 SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 · · · · · · · · Maximum Ratings

diode marking code W5

Abstract: BZT52-C2V7S
Contextual Info: ADVANCE INFORMATION BZT52C2V7S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data

6A1 diode

Abstract: marking code 76s 7006S 6A1 MARKING
Contextual Info: SIEMENS BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 3 • Available with CECC quality assessment A1/A2 2 C2 1 . R FI Type Marking

SOD123 wn diode

Abstract: BZT52C18 BZT52C3V3
Contextual Info: BZT52C2V7 - BZT52C51 SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • Planar Die Construction 410mW Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes · · · E D A B Mechanical Data · ·

BZT52-C9V1S

Contextual Info: NEW PRODUCT BZT52C2V4S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data •

JJ SMD diode

Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Contextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

marking WM

Abstract: BZT52C7v5 spice transistor marking WY BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C39 BZT52C3V0 BZT52C3V3 BZT52C3V6
Contextual Info: BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16

marking code 153 DIODE sod 23

Contextual Info: BZT52C2V7 - BZT52C51 SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction 410mW Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes E D A B Mechanical Data

MR78700

Abstract: schrack mr MRMW0W00 MR78110 MR78755 diode mr 4007 MRMZ0W00 MRMY0W00 MR78750 MRML0730
Contextual Info: MT Multimode Relays 2 pole/3 pole, 10 A i k j . For dc and ac operating voltage, neutral, monostable »a | &• Mechanical and optional electrical operating state indicator LED 6 9 .0 0 217) 1 I T 2 * * * 2 changeover contacts 8 pole M T 3 * * * 3 changeover contacts, 11 pole