MARKING CODE CE SOT23 Search Results

MARKING 016 SOT-353

Abstract: marking nc sot-353 sot-353 marking code SOT-353 SOT-353 MARKING e2 SOT353 SP2524 SP2524XS25RG SP2524XS35RG LDO MARKING
Contextual Info: SP2524 Low ESR Cap. & Low Power High-speed CMOS LDO With CE Pin DESCRIPTION The SP2524 series are highly precise, low noise, positive voltage LDO regulators manufactured using CMOS processes. The series achieves high ripple rejection and low dropout and consists of a standard

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

IMBT4403

Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Contextual Info: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C

MAX6367PKA29

Abstract: maxim CODE TOP MARKING MARKING AABV marking code AABJ aabp marking aabz sot23 AAAK marking 8pin aabi marking AACE marking code R2 sot23
Contextual Info: 19-1658; Rev 0; 7/00 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features ♦ Low +1.2V Operating Supply Voltage VCC or VBATT ♦ Precision Monitoring of +5.0V, +3.3V, +3.0V, and +2.5V Power-Supply Voltages ♦ On-Board Gating of Chip-Enable Signals, 1.5ns

sot-23 MARKING CODE G1

Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
Contextual Info: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,

Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES SOT-23 ♦ PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier " applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

Contextual Info: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volt VOLTAGE POWER 330 mW • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . Halogen Free

sot-23-5 marking code Ax

Abstract: FP6731 sot-23-5 marking code Step-up Converter marking sot-23-5 Step-up Converter sot-23-5 FP6731-32S5G
Contextual Info: FP6731 fitipower integrated technology lnc. PWM Controlled, Step-up DC/DC Converter in Tiny Package Description Features The FP6731 is a high efficiency PWM DC/DC step -up converter with internally compensated current mode controller. The 250kHz switching frequency

SOT23-5 pwm generator

Abstract: mosfet cl sot23-5 SOT23-5 MARKING 255 EW SOT23 PWM 003 marking code CE SOT23-5 sot23-5 mosfet driver marking 255 SOT23-5
Contextual Info: AP1625 PWM/PFM Dual Mode Step-down DC/DC Controller „ Features „ General Descriptions - Input voltage range:2.2V~8V（VOUT type） - Adjustable version（±2.5%） - Oscillator frequency: 300kHz（±15%） - High Efficiency: 92%（typ .） - Stand-by capability: ISTB＝3µA.（max .）

Contextual Info: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings

SMD TRANSISTOR MARKING w7

Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: FS8853-DS-26_EN OCT 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8853 300 mA LDO Linear Regulator FS8853 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

FS8860

Contextual Info: FS8860-DS-21_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.1 Datasheet FS8860 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: DW01M-DS-15_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation

bta 05

Abstract: BTA05
Contextual Info: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05

T2907A

Abstract: marking AI sot23 JJ SOT23
Contextual Info: TM C e n t r a l Sem i c o n d u c t o r C o r p . C M P T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.

Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23

BCV72

Abstract: BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti
Contextual Info: I t FERRANTI llsemiconductorsL FMMT4125 PNP Silicon Planar General Purpose S w itch in g T ransistor D E S C R IP T IO N T h is device is intended for use in sm a ll and m e diu m sign a l a m p lificatio n a p p lica tio n s from d.c. to radio requencies.

Contextual Info: FS361-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS361 One Cell Lithium-ion/Polymer Battery Protection IC FS361 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: Fo r tun e FS8806 Semiconductor Corporation 富晶半導體股份有限公司 PFM Step-up DC-DC Converter General Description Features The FS8806 is a compact PFM step-up DC/DC converter that operates from an input voltage as low as 1.0 Volt. The low start-up input voltage

Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR /L I T E M îl'j I P O W E R S E M IC O N D U C T O R / Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available

SOT-23 marking AFE

Abstract: marking code AFE CE040
Contextual Info: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Values Unit