MARKING CODE AHE Search Results

Kelly

Abstract: marking code of 0 to Z marking 51 MF-NSMF020 MF-NSMF035 MF-NSMF050 MF-NSMF075 MF-NSMF110 MF-NSMF150 MF-NSMF200
Contextual Info: June 2005 Circuit Protection Division Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team ION IT TECT U C CIR PRO Bourns Multifuse® Product Marking Modification The products in the MF-NSMF product family will now be marked with a simple product code

MCF528X

Abstract: MCF5282 MCF5281 MCF5282DE L95M
Contextual Info: MCF5282 Chip Errata Silicon Revision: All Supports: MCF5281, MCF5282 Summary of MCF528x Errata All current MCF5281/82 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is

WE 251

Abstract: HOT 51011 W6 13A Diode 2306U
Contextual Info: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video

251M1002

Abstract: ic 6301 22 J.63 capacitor
Contextual Info: To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video

Contextual Info: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video

Contextual Info: P- 251 - E013 TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies.

10B35

Abstract: 22 J.63 capacitor
Contextual Info: To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video

Contextual Info: P- 251 - E014 TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies.

3528

Abstract: T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS
Contextual Info: Go ahead, it’s your move . . . . Design a KEMET Tantalum Chip into your future KEMET is offering five Tantalum Chip Engineering Kits to meet your diverse design needs for the future. KEMET’s line of Engineering Kits for Tantalum Chips will include a T495 Low ESR Kit, an Extended Range T491 Kit, a Standard T491

Contextual Info: • bbSB^Bl 0025AQ1 bbl ■ APX N AHER PHILIPS/DISCRETE PMBD 6050 b?E D J V. SILICON PLANAR EPITAXIAL HIGH SPEED DIODES Silicon epitaxial high speed diodes in a microminiature plastic envelope. It is intended for high-speed switching in thick and thin-film circuits.

Contextual Info: bbSB'lBl OOSSfiOH 370 « A P X N AHER PHILIPS/DISCRETE PMBD 6100 b7E D J V SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PMBD6100 consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high speed switching.

Contextual Info: fc.bSB'm DDEMBD? bfifi • APX Philips Semiconductors Product specification N AHER PHILIPS/DISCRETE b7E D Schottky barrier diodes BAS70-07 QUICK REFERENCE DATA FEATURES • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage

Contextual Info: bb53T31 0PS4SST 64fl « A P X N AHER PHILIPS/DISCRETE b?E BCV71 BCV72 J> J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

Contextual Info: • bb53T31 00243b3 407 N AHER PHILIPS/DISCRETE APX BAV74 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the device is intended for high-speed switching in thick and thin-film circuits.

Contextual Info: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323

Contextual Info: • bbSBTBl QOSMSfl? 70S H A P X N AHER PHILIPS/DISCRETE BCW71 BCW72 b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

Contextual Info: • bbS3T31 0025561 Ifll H A P X N AHER PHILIPS/DISCRETE BSR18A b7E D SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope, intended fo r switching and linear applica­ tions in thick and thin-film circuits.

transistor d 1933

Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
Contextual Info: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial

Contextual Info: SN54F283, SN74F283 4ĆBIT BINARY FULL ADDERS WITH FAST CARRY SDFS069A − D2932, MARCH 1987 − REVISED OCTOBER 1993 • • • SN54F283 . . . J PACKAGE SN74F283 . . . D OR N PACKAGE TOP VIEW Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead

TRANSISTOR SMD CODE B7

Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Contextual Info: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.

p2x transistor

Abstract: transistor marking code p2x PMST4401 bbS3T31
Contextual Info: 0. . e . „ . Philips Semiconductors • bbSB^l 0025^42 DbS M A P X " n AHER P H I L I P S / D I S C R E T E _ . ._ t. Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION

Contextual Info: SN54F283, SN74F283 4ĆBIT BINARY FULL ADDERS WITH FAST CARRY SDFS069A − D2932, MARCH 1987 − REVISED OCTOBER 1993 • • • SN54F283 . . . J PACKAGE SN74F283 . . . D OR N PACKAGE TOP VIEW Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead

Contextual Info: SN54F283, SN74F283 4ĆBIT BINARY FULL ADDERS WITH FAST CARRY SDFS069A − D2932, MARCH 1987 − REVISED OCTOBER 1993 • • • SN54F283 . . . J PACKAGE SN74F283 . . . D OR N PACKAGE TOP VIEW Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead

Contextual Info: SN74F169 SYNCHRONOUS 4ĆBIT UP/DOWN BINARY COUNTER ą SDFS089 − MARCH 1987 − REVISED OCTOBER 1993 • • • • • D OR N PACKAGE TOP VIEW Fully Synchronous Operation for Counting and Programming Internal Look-Ahead Circuitry for Fast Counting Carry Output for N-Bit Cascading