MARKING CODE 3T3 Search Results

CK 77-1 3 94V-0

Abstract: BDP 548 P6SMBJ33CA 3T260AA P4SMAJ11CA GI 1.5KE250A ddx 2050 3T180AA 3T130AA Zener diode wz 162
Contextual Info: 3T Thyristor Series MERITEK UL E223027 SMA AND AXIAL LEAD DO-41 3T PART NUMBER 3T110AA 3T130AA 3T150AA 3T180AA 3T230AA 3T260AA 3T310AA 3T350AA MARKING CODE FOR AXIAL DO-41 PACKAGE FOR SMA PACKAGE 3T110AAL 3T130AAL 3T150AAL 3T180AAL 3T230AAL 3T260AAL 3T310AAL

marking code 11G1

Contextual Info: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V

1N MARKING

Contextual Info: International I O R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 JD I g 1n r 3T3D1 ss a t 3 D D2 G2 or a # 3 D D2 Vdss = 20 V Ros on = 0.029Î2

mini 123 card reader decoding software

Abstract: TAG35 tjc3 BS2848 tag6-100 SS2343 BS6746C polyolefin film TIA606 TAG8-100
Contextual Info: Identifying • LABELING SOFTWARE . . . . . . . . . . . . . . . . . . . . .102 • COMPUTER PRINTABLE LABELS AND SYSTEMS . . . . . . . . . . . . . . . . . . . . . . . . . . .106 • PREPRINTED LABELING CARDS, BOOKS, AND TAPE . . . . . . . . . . . . . . . . . . . . . . .135

3T130AA

Abstract: 3T230AA 3T150AAL 3T110AA
Contextual Info: TWO TERMINAL THYRISTOR SERIES SURFACE MOUNT SMA AND AXIAL LEAD DO-41 TWO TERMINAL THYRISTOR 3T SURGE SUPPRESSOR FEATURES ◎ UL94V-0 Flammability Classification ◎ Peak Off-State Voltage from 58 to 300 volts ◎ ESD Protection >40 kilovolts ◎ Meet IEC100-4-4 & -5 Industry Requirement

tjc3

Abstract: RO512 HellermannTyton ul224 TIA606 CMF072 95320 HellermannTyton-Cable Protection marking 3t1 MHG00
Contextual Info: M I S C E L L A N E O U S L A B E L I N G RITE-ON MARKERS HellermannTyton’s Rite-On Markers are flexible vinyl film used to mark wire and cable. The self-laminating labels have a clear tail which seals the legend under clear vinyl, maintaining the quality of the labels. The RiteOn markers are packaged in a reuseable dispenser made from high impact

piezotite

Abstract: UT200BA Distance measurement MA40S4S "Piezoelectric transducer" ultrasonic, murata UT200BA8 PKGS MURATA Airbag sensor piezoelectric 40KHZ ULTRASONIC transducers download TC4011BP datasheet 40khz Ultrasonic cleaner circuit diagram
Contextual Info: This is the PDF file of catalog No.P19E-6. No.P19E6.pdf PIEZOELECTRIC CERAMIC SENSORS PIEZOTITE PIEZOELECTRIC CERAMICS SENSORS (PIEZOTITE ®) Murata Manufacturing Co., Ltd. Cat.No.P19E- 6 This is the PDF file of catalog No.P19E-6. No.P19E6.pdf Preface

smd code marking NEC

Abstract: fuse smd code y smd marking gz smd fuse marking code K k smd fuse marking code national semiconductor thyristor 3T230B GW smd fuse marking code 1 smd fuse marking code n smd fuse marking 20
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210 La Quinta, CA. U.S.A. 92253 Tel: 760*564-8656 * Fax: 760-564-2414 TWO TERMINAL THYRISTOR SERIES SURFACE MOUNT AND AXIAL LEAD TWO TERMINAL THYRISTOR 3T SURGE SUPPRESSOR DEVICE SYMBOL FEATURES UL94V-0 Flammability Classification

PH 17G

Abstract: PH-17G ph-17j MBG048 BYD17G RECTIFIER BYD17 BYD17D BYD17G BYD17J BYD17K
Contextual Info: Philips Semiconductors Product specification Controlled avalanche rectifiers BYD17 series FEATURES • Glass passivated • High maximum operating temperature k a • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability

SIEMENS 3VF

Abstract: epson printer board pm 235 access 2 wash buffer II MSDS LS5-HS3 gmv 3010 panasonic ER 203 charger circuit siemens LS4 MANUAL psmb 325 alps head NEC PINWRITER P7
Contextual Info: Table of Contents Description Page Number s Portable Labeling Systems and Printers . 5-26 Pan-Quik LS3E Hand-Held Dot-Matrix

Contextual Info: Central CM PT2907A Sem iconductor Corp. PNP SILICON TRAN SISTO R DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

NAF-0602

Abstract: WES-1334 MARKING CODE WM9 WD-26p WD-26P thomas and betts WCCP1-25S BP-0273 WC-125 D882 pm 75 WL185
Contextual Info: MEP S-2205/Technical Sec. M 28/09/99 15:44 Page 2 E-Z-Code Wire Marker System Applications for IS-SW 30 Software IS-SW 3.0 Windows Labeling System • • • • • The IS-SW 3.0 software offers the customer powerful technology allowing them to address their particular labeling needs quickly and efficiently. The

smd marking gz

Abstract: MIL-STD-750 METHOD 2026 marking code for SMD MDE Semiconductor GZ SMD 3T230B GW smd marking GY smd marking gc smd transistor GY 3T072A
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA, U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 TWO TERMINAL THYRISTOR SERIES SURFACE MOUNT AND AXIAL LEAD TWO TERMINAL THYRISTOR 3T SURGE SUPPRESSOR FEATURES DEVICE SYMBOL • UL94V-O Fammability Classification

Contextual Info: International PD9'1376A TOR Rectifier preliminary IRL2910S HEXFET Power MOSFET • Logic-Level G ate Drive • • • • • • • Surface Mount Advanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 °C Operating Tem perature

BF994 M94

Abstract: BF994 FET MARKING CODE
Contextual Info: _I f N AMER PHILIPS/DISCRETE obE D • Q0 i ^53131 J 30 ü a 4 1 BF994 L T ' 3 i - a r SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and

Contextual Info: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

Contextual Info: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon

3T400C

Abstract: 3T110BL
Contextual Info: TWO TERMINAL THYRISTOR SERIES SURFACE MOUNT SMB AND AXIAL LEAD DO-15 TWO TERMINAL THYRISTOR 3T SURGE SUPPRESSOR ◎ UL94V-0 Flammability Classification ◎ ESD Protection >40 kilovolts ◎ Low Capacitance for T1/E1 Trunk and Line Card Application ◎ High Surge Current Capability

PTB42003X

Contextual Info: l'P-33'Ol PTB42003X \_ PHILIPS INTERNATIONAL St.E D • 7110fl2b DD4b44fl Mb? ■ P H I N MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.

3T310BL

Abstract: 3T310AL HCL 0300 MARKING GJL DO-204AC DO214AA IEC61000-4-4 3T064BLC 3T064C GHL 88
Contextual Info: LOW CAPACITANCE TWO TERMINAL THYRISTOR SERIES SURFACE MOUNT SMB AND AXIAL LEAD DO-15 TWO TERMINAL THYRISTOR 3T SURGE SUPPRESSOR ◎ UL94V-0 Flammability Classification ◎ ESD Protection >40 kilovolts ◎ Low Capacitance for T1/E1 Trunk and Line Card Application

TRANSISTOR K 314

Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083
Contextual Info: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.

BFR31

Abstract: BFR30 MARKING CODE 7E VF 53 TAM transistor marking code 7E SOT-23 BFR31 MARKING CODE
Contextual Info: • bb53T31 0025137 440 H A P X BFR30 BFR31 b?E D N AMER P H I L I P S / D I S C R E T E 7 V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.

Contextual Info: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint

BS6746C

Contextual Info: Identifying Miscellaneous Labels Rite-On Markers HellermannTyton’s Rite-On Markers are made from a flexible vinyl film and are used to mark wire and cable. The selflaminating labels have a clear tail which seals the legend under clear vinyl, maintaining the quality of the labels. The RiteOn markers are packaged in a reuseable dispenser made from high impact plastic which is resistant to oils and grease.