MARKING CODE 3A SOT23 Search Results

Vishay diodes code marking

Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
Contextual Info: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year

F5 marking code

Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Contextual Info: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

Si2303ADS

Abstract: Si2303DS
Contextual Info: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2303ADS

Abstract: Si2303DS
Contextual Info: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2305 Pin Description -20V/-3.5A , RDS ON =60mΩ(typ.) @ VGS =-4.5V RDS(ON) =70mΩ(typ.) @ VGS =-2.5V R =83mΩ(typ.) @ V DS(ON) z GS =-1.8V Super High Dense Cell Design Top View of SOT23-3L z Reliable and Rugged

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L

MARKING TR SOT23-3 P MOSFET

Abstract: APM2301CA STD-020C marking tp sot23-3
Contextual Info: APM2301CA P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A RDS ON = 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 135mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design SOT23-3 Reliable and Rugged

FMMT617

Abstract: FMMT-617 FMMT617TA
Contextual Info: A Product Line of Diodes Incorporated FMMT617 15V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 15V IC = 3A high Continuous Collector Current ICM = 12A Peak Pulse Current

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

Contextual Info: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302S Pin Description 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)

Contextual Info: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302 Pin Description 20V/5A , RDS ON =20mΩ(typ.) @ VGS =4.5V RDS(ON) =40mΩ(typ.) @ VGS =2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)

marking 021

Contextual Info: A Product Line of Diodes Incorporated ZXTN25100BFH 100V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > 100V BVCEX > 170V forward blocking voltage BVECO > 6V reverse blocking voltage

marking 624

Contextual Info: A Product Line of Diodes Incorporated FMMT624 125V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 125V IC = 1A high Continuous Collector Current ICM = 3A Peak Pulse Current RCE sat = 160mΩ for a low equivalent On-Resistance

marking 722

Abstract: fmmt722
Contextual Info: A Product Line of Diodes Incorporated FMMT722 70V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -70V IC = -1.5A Continuous Collector Current ICM = -3A Peak Pulse Current

ic 7495

Contextual Info: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.

Contextual Info: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

zp2 transistor

Contextual Info: DSS5240T Features Mechanical Data • BVCEO > -40V • • IC = -2A high Continuous Collector Current • • ICM = -3A Peak Pulse Current Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 •

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

Contextual Info: A Product Line of Diodes Incorporated FMMTL717 12V PNP HIGH GAIN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -12V IC = -1.25A Continuous Collector Current ICM = -4A Peak Pulse Current

FMMT720TA

Abstract: FMMT720 MARKING 720 SOT23
Contextual Info: A Product Line of Diodes Incorporated FMMT720 40V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -40V IC = -1.5A Continuous Collector Current ICM = -4A Peak Pulse Current

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK