MARKING CODE 27A Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: Part Marking Information Vishay High Power Products Insulated TO-220AC Tandem Example: Part number xxxxxx V Z119M A C Assembly lot code This is a xxxxxx with assembly lot code AC, assembled on WW 19, 2001 in the assembly line “M” Product version optional :

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

diode marking 343

Abstract: sot-343 schottky diode
Contextual Info: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, Dual, Galvanically isolated Silicon Schottky diode , is designed for use in high speed surface mount switching applications. Marking Code is WSH4.

Si2303DS

Abstract: A3 MARKING CODE
Contextual Info: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2303DS

Abstract: A3 MARKING CODE
Contextual Info: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

ST MARKING STYLE

Abstract: D R MARKING
Contextual Info: A CALIFORNIA MICRO DEVICES PAC 27A01 P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK Features • Matched resistor pair • Tight parametric control • Long term stability • SOT-23 package for space critical applications A p p licatio n s • Matched resistor pair

Contextual Info: PD - 95550 IRFR/U4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS(on) = 0.045Ω G ID = 27A… S Fifth Generation HEXFETs from International Rectifier

Contextual Info: 5 T H IS D R AW IN G C O PYRIG HT IS U N P U B L IS H E D . - R ELEASED BY TYCO E LEC TR O N ICS C ORPORATION. FOR ALL 4 3 2 P U B L IC A T IO N R IG H TS RESERVED. LOC D IS T AD 25 R E V IS IO N S D 53.34[2. 100] DWN D E S C R IP T IO N REVISED PER 27APR07

Contextual Info: IPEC 27A88 CALIFORNIA MICRO DEVICES 8 CHANNEL RELAY DRIVER Features Description ♦ This IPEC 27A88 is an 8 channel, open drain driver with low ON resistance and integrated protection diodes for inductive load switching. Each output can sink 40mA and all outputs

IRF 860

Abstract: AN1001
Contextual Info: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

Contextual Info: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

marking 27A DIODE

Abstract: IRLZ34N IRF1010
Contextual Info: PD - _ IRLZ34N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.035Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier

IRF540N

Abstract: MOSFET IRF540n IRF1010 irf1010 applications
Contextual Info: PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier

IRF 860

Abstract: AN1001
Contextual Info: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

IRF540N

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description

Contextual Info: V23990-K233-F preliminary datasheet 2 nd gen. MiniSKiiP 2 600V/75A Features MiniSKiiP 2 Housing ● SixPack inverter topology ● Solder less interconnection ● Designed for motor drives up to 7 kW ● Fully compatible with Semikron pedant 27AC066V1 ● Temperature sensor

Sixpack

Contextual Info: V23990-K232-F-PM MiniSKiiP 2 PACK 600V/50A MiniSKiiP® 2 Housing Features ● SixPack inverter topology ● Solder less interconnection ● Designed for motor drives up to 7 kW ● Fully compatible with Semikron pedant 27AC066V1 ● Temperature sensor

IRF 860

Abstract: AN1001
Contextual Info: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including