27APR07 Search Results

CRIMP CONTACTS

Contextual Info: Product Specification 108-1579 27Apr07 Rev B Sealed Circular Plastic Connector With Removable Crimp Contacts 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for Tyco Electronics sealed circular plastic connectors with removable crimp contacts. These connectors are designed for use in

Contextual Info: 501-517 Qualification Test Report 27Apr07 Rev B Sealed Circular Plastic Connector With Removable Crimp Contacts 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics sealed circular plastic connector with removable crimp contacts to determine its conformance to the requirements of Product Specification 108-1579 Revision

Contextual Info: 5 T H IS D R AW IN G C O PYRIG HT IS U N P U B L IS H E D . - R ELEASED BY TYCO E LEC TR O N ICS C ORPORATION. FOR ALL 4 3 2 P U B L IC A T IO N R IG H TS RESERVED. LOC D IS T AD 25 R E V IS IO N S D 53.34[2. 100] DWN D E S C R IP T IO N REVISED PER 27APR07

AN609

Abstract: Si1034X 70455 70.455
Contextual Info: Si1034X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

3121

Abstract: AN609 Si4376DY 101928
Contextual Info: Si4376DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1037X
Contextual Info: Si1037X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: 24 23 22 21 19 20 17 IB 16 15 14 13 12 11 10 V 7 8 MISSING SYMBOLS SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M TOTAL NO OF INSPECTIONS REQUIRED

FHS-A6025B01

Abstract: W5500 Dow Corning 2073 Dow Corning TC-1996 2759T A602 Dow Corning TC 1996 intel nehalem e5500 TC-1996
Contextual Info: Model Name: FHS-A6025B01 DELTA ELECTRONICS, INC. Application: • Intel Nehalem Socket 1366 2U • Xeon 45nm W5500/X5500/E5500/L5500 CPU sequence Pictures Thermal & Mechanical Spec.: • Thermal performance for 130W CPU • HSK Assembly Weight: 590 g (ref.)

V30100P

Abstract: JESD22-B102D J-STD-002B 0840 057
Contextual Info: V30100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A FEATURES • Trench MOS Schottky Technology • Low forward voltage drop, low power losses • High efficiency operation

intel nehalem

Abstract: A1050 4405 Delta Electronics TC-1996 young
Contextual Info: Model Name: DHS-B9090-11 DELTA ELECTRONICS, INC. 1. Application: Intel Nehalem Socket 1366 1U Passive HSK 2.Material：Fin: Aluminum A1050 + Base: Copper 1100 3.Weight：410g 4.Type：Soldering 5.Dimension：90*90*27 mm 6.Heat source size：34*32(mm) 7.Thermal Interface Material：TC-1996

AMD Sempron 140

Abstract: AMD 140 Socket AM3 AMD Phenom 2 FHS-A7015B62 AMD Phenom AMD phenom x4 AMD Athlon X2 socket AM3 pwm thermistor AMD sempron 3000
Contextual Info: Model Name: FHS-A7015S61 DELTA ELECTRONICS, INC. Pictures Application: • AMD Athlon Ⅱ X2 2XX Regor CPU / 65W • AMD Sempron 140 ( Sargas CPU / 45W ) (SocketAM2/SocketAM2+/Socket AM3) Thermal & Mechanical Spec.: • Thermal performance for 65W/45W CPU

394559

Abstract: AN609 Si4370DY
Contextual Info: Si4370DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

a 6151

Abstract: AN609 Si4511DY 222207 119237
Contextual Info: Si4511DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1032R
Contextual Info: Si1032R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

tetra-etch

Abstract: MR1-350-130 Gore tetra etch PCT-2M 430-FST 136-awp 134-AWP MR1-350-127 M-line accessories MCA-2 EPOXYLITE 813
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book strain gage accessories vishay micro-measurements vse-db0065-0707 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

7912 data book

Abstract: data sheet 7912 AN609 Si4636DY
Contextual Info: Si4636DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1033X
Contextual Info: Si1033X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

in 4436

Abstract: AN609
Contextual Info: Si4736BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

KTA1505

Abstract: MARKING 27 sot23
Contextual Info: KTA1505 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(TA=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous

VBUS054B-HSF

Abstract: zener diode U3 Marking marking dC
Contextual Info: VBUS054B-HSF Vishay Semiconductors 4-line BUS-port ESD-protection Features • • • • • • Ultra compact LLP75-6L package Low package height < 0.6 mm 4-Line USB ESD-protection e3 Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2

ISO-11898

Abstract: iso11898 ISO 11898-2 ISO-11898-2 TJA1051 ISO 11898-3 reliability report of nxp ISO11898-2 ISO11898-3 J2602
Contextual Info: NXP Automotive networking solutions FlexRay TJA1080A production development 10000 Normal, Standby, Sleep SSOP20 FlexRay V2.1 Rev. A 10000 Normal, Standby, Sleep SSOP20 V V uA 6.5 … +60 4.75…5.25 50 6.5 … +60 4.75…5.25 50 V -60 … +60 kV kV V ±8 Status

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd, 3rd & 5th Harmonic : Pushing: Pulling, 12dBr pk-pk (all Phases): Tuning Sensitivity:

Contextual Info: 7 THIS DRAWING IS U N PU B LISH ED . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. A LL FOR PUBLICATION 5 3 4 2 - LOC RIGHTS RESERVED. REVISIONS D IS T AD 00 LTR K H OUSING MATERIAL: HIGH COLOR: GRAY OR WHITE POST AND 93.98[3.7 00] MAX l4: 87.7 6[3.455] —