MARKING BBS DIODE SOT Search Results

BAR81W

Contextual Info: BAR81W Silicon RF Switching Diode 3
Design for use in shunt configuration 4
High shunt signal isolation
Low shunt insertion loss 2 1 Type Marking BAR81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT343 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss EHA0702D Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343

A1270

Abstract: transistor A1270 A1270 transistor datasheet 81W MARKING CODE a1270* transistor Q62702-A1270 marking 81W
Contextual Info: BAR 81W Silicon RF Switching Diode Preliminary data 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343

marking 81W

Contextual Info: BAR 81W Silicon RF Switching Diode 3
Design for use in shunt configuration 4
High shunt signal isolation
Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol

smd JS

Abstract: smd JS 3 diode smd transistor js DIODE JS marking bbs diode sot 100 mA diode diode ja smd marking SOT343 smd diode marking ja
Contextual Info: Diodes SMD Type Silicon RF Switching Diode BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100

Contextual Info: Product specification BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100 mW Diode reverse voltage

Contextual Info: Philips Semiconductors b b 5 3 ^ 31 □ 0 2 b 4 M0 b 7 5 IB APX Product specification Variable capacitance diode BBY31 N AUER PHILIPS/DISCRETE DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning

81W MARKING CODE

Abstract: Q62702A1270 marking code 7G
Contextual Info: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss IN - — - W » EHA07023 BAR 81W BBs 1 = A1 2 = C2 Q62702-A1270 Package eg Pin Configuration

BAL74

Abstract: SOT23 DIODE marking CODE AV Philips MBB diode RL-250
Contextual Info: Philips Semicon b iE P bbS3^31 Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. TSO IAPX Product specification N AUER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION

bbs 2002

Abstract: BAR81 BAR81W marking 015
Contextual Info: BAR81. Silicon RF Switching Diode
Designed for use in shunt configuration in high performance RF switches
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation using  lines BAR81W 4 3 1 2 Type BAR81W Package

Contextual Info: BAR81. Silicon RF Switching Diode
Designed for use in shunt configuration in high performance RF switches
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation using  lines BAR81W 4 3 1 2 Type BAR81W Package

Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " !  Type BAR81W

N 407 Diode

Abstract: Philips MBB BAV74
Contextual Info: • hbS3T31 N AMER 00243b3 407 ■ PHILIPS/DISCRETE APX b7E BAV74 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists o f tw o diodes in a m icrom iniature plastic envelope. The cathodes are commoned and the device is intended fo r high-speed switching in thick and thin -film circuits.

marking bbs

Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package

Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " !  Type BAR81W

Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " !  Type BAR81W

Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package

Contextual Info: BAR81. Silicon RF Switching Diode
Designed for use in shunt configuration in high performance RF switches
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation using  lines BAR81W 4 3 1 2 Type BAR81W Package

marking p3

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA - - G r e e n f A 4 - — v-V L i n e M MBF2202PT1 Low rDS on Sm all-Signal VAOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy-con­ serving traits.

AN1085

Abstract: AN10857 TCXO Quartz oscillator compensated 10 MHz PCF2129A SO20 UM10204 PCF2129 PCF2127A
Contextual Info: PCF2129A Integrated RTC, TCXO and quartz crystal Rev. 01 — 13 January 2010 Product data sheet 1. General description The PCF2129A is a CMOS1 real time clock and calendar with an integrated Temperature Compensated Crystal Xtal Oscillator (TCXO) and a 32.768 kHz quartz crystal optimized

Contextual Info: PCF2129AT Integrated RTC, TCXO and quartz crystal Rev. 4 — 7 November 2012 Product data sheet 1. General description The PCF2129AT is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz

Contextual Info: PCF2129AT Integrated RTC, TCXO and quartz crystal Rev. 3 — 4 October 2012 Product data sheet 1. General description The PCF2129AT is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz

PCA2129T/Q900/2

Contextual Info: PCA2129T Accurate RTC with integrated quartz crystal for automotive Rev. 4 — 11 July 2013 Product data sheet 1. General description The PCA2129T is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz

Contextual Info: PCF2129T Accurate RTC with integrated quartz crystal for industrial Rev. 4 — 11 July 2013 Product data sheet 1. General description The PCF2129T is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz