MARKING BBO CODE Search Results

K2I transistor

Abstract: TRANSISTOR K 135
Contextual Info: SIEMENS BF775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners LOs Q62702-F1520 1=B m BF 775W ro II ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 3=C Package

Contextual Info: S IE M E N S BCR 133S NPN Silicon Digital Transistor Array »Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistors (R-|=10kA, R2=10kfl) Type BCR 133S Marking Ordering Code Pin Configuration

transistor wc

Abstract: MARKING CODE 0N SOT323 bcr148w
Contextual Info: SIEMENS BCR 148W NPN Silicon Digitai Transistor «Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R- =47ki2, R2=47kQ) Pin Configuration BCR 148W WEs 1=B Q62702-C2291 N> il m Marking Ordering Code Package o il CO Type

Q62702-D1340

Abstract: p952
Contextual Info: SIEMENS BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low coliector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Marking Ordering Code Pin Configuration

Contextual Info: S IE M E N S PÑP Silicon High-Voltage Transistors MPSA 92 MPSA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: M P S A 42 M P S A 43 NPN Type M P S A 92 M P S A 93 Marking M P S A 92 M P S A 93 Ordering Code

3906

Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

Contextual Info: UMS2N / UMT2N / FMS2A / IMT2A / IMT3A UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 Transistors I General Purpose Dual Transistors UMS2N / UMT2N / FMS2A / IMT2A / IMT3A •A bsolu te maximum ratings (T a = 2 5 t0 •Features 1 ) Two 2SA1037AK chips are housed in a UMT or SMT package

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS MJ itickicon 5.2mmL MAX. Sm aller Anti-Solvent Feature • 5.2mmL MAX. height. MA I MJ ISpecifications Item Perform ance Characteristics Operating Temperature Range - 4 0 — { -8 5 C Voltage Range 4 — 50V C apacitance Range

diode tfk s 220

Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Contextual Info: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFR106

Abstract: 2I k
Contextual Info: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

1AJ5

Contextual Info: SIEMENS bfp 161 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

TFK diode

Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Contextual Info: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)

bc 471

Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
Contextual Info: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN

SMBJ5.0A DO214AA

Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

MARKING CODE NR12

Contextual Info: il Resistors Rectangular Chip Fixed Resistors JIS Standard: JIS C 5223 - 1989 M a x im u m W o rk in g V o lta g e (V) R a te d d is s ip a tio n (7 0 C) T ype MCR01 1 /1 6 W (0 0 6 3 W ) MCR03 25 1/16 W (0 .0 6 3 W ) MCR10 50 1 /1 0 W (0 .1 0 0 W ) MCR18

st smd diode marking code BUH

Abstract: diode smd marking BUF smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code diode SMBJ170A-TR st smd diode marking code BUZ diode smd marking BUE diode smd marking BBE
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

diode smd marking BUF

Abstract: smd diode code buh diode smd marking "BBE" diode smd marking BUE diode smd marking BBf smd code buz smb smd code buh diode smd marking "BUF" diode smd marking BUA diode smd marking "BUE"
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodes designed

st smd diode marking code BUH

Abstract: diode smd marking BUF diode smd marking BBE diode smd marking Bva smd diode order marking code stmicroelectronics STMicroelectronics smd marking code STMicroelectronics smd DIODE marking code marking bbz diode smd marking BBf diode smd marking BUA
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

st smd diode marking code BUH

Abstract: diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE st smd diode marking code BUZ diode smd marking BBf diode smd marking "BUF" diode code BUH
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

diode smd marking BUF

Abstract: marking CODE R SMD DIODE SMB J 36 CA diode smd marking BUE diode smd marking BBE diode smd marking "BUF" smd diode code buh diode smd marking BUj diode smd marking Bva SMD CODE BUQ BUL 510
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodesdesigned

bbc ds diodes DS 1,8

Abstract: diode smd marking BUE bbc ds diodes DS20-800 B SMBJ8.5CA
Contextual Info: S G S - ÏH O M S O N S M B J 5 .0 A -T R ,C A -T R [ M r e * S S M B J 1 8 8 A -T R ,C A -T R œ @ [ E L [ iO TRANS IL FEATURES • PEAK PULSE POWER: 600 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR

MARKING CODE R1C

Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95