MARKING A14 Search Results

MPSA14

Abstract: mps a14 K MPS DSA0010574 equivalent mpsa14 MPSa14 equivalent
Contextual Info: SEMICONDUCTOR MARKING SPECIFICATION MPSA14 TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS A14 801 No. Item Marking 1 KEC K 2 Description KEC CORP. MPS Series Name A14 Device Name Device Name 3 4 98.06.23 Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999

A09 resistor network

Abstract: B1578 L05 MARKING
Contextual Info: MRP precision metal film resistor SIP network NEW features • • • • • Custom design network Ultra-precision performance for precision analog circuits Tolerance to ±0.1%, matching to 0.05% T.C.R. to ±25ppm/°C, tracking to 2ppm/°C Marking: Black body color with white marking

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1504A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A14 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit

Contextual Info: SIEMENS BAR66 Silicon PIN Diode Array • • • Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code taped Pin Configuration 1 2 A1 Q62702-A1473

BAR66

Abstract: Q62702-A1473
Contextual Info: BAR66 Silicon PIN Diode Array l l l Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code taped Pin Configuration 1 2 A1 C2 Q62702-A1473 Package

marking PM

Contextual Info: S IE M E N S BAR66 Silicon PIN Diode Array • • • Surge protection device Tw o PIN diodes, series configuration D esigned for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PM s Ordering Code taped Pin Configuration 1 2 Q 62702-A1473

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

MMBD1503

Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
Contextual Info: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.

a7338

Abstract: A6338M a6228 A6225M A1335 B2336
Contextual Info: Single Ended GP – Capacitors Standard Series – 105oC B41851/B43851 Construction Radial leads Charge-discharge proof, polar Aluminum case with insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Miniaturized dimensions Operation up to 1050C

smd j3y

Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O

A1337

Abstract: B568 A1226 A4107 A4475 F2476M A968 A1336 a7338
Contextual Info: Single Ended LL – Capacitors Very Low Impedance B41858 Construction Radial leads Charge-discharge proof, polar Aluminum case with insulating sleeve Minus pole marking on case surface Case with safety vent from diameter 8mm Stand off rubber seal Features

MARKING HYNIX

Abstract: MARKING HYNIX Origin Country
Contextual Info: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration

z80b

Abstract: JTF16C
Contextual Info: 2GB, 4GB x64, DR : 240-Pin DDR3 SDRAM UDIMM Features DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: Table 1: Options • Marking Operating temperature1

hynix hy

Abstract: HY62LF16206A HY62LF16206A-LT12C 48-TSOP1 MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1
Contextual Info: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration

A 1504

Abstract: A14 marking SOT 1505 marking MMBD1503 TA 1504 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505
Contextual Info: MMBD1501/A / 1503/A / 1504/A / 1505/A 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 1 1 2 1503 2 3 3 1504 A11 A13 A14 A15 3 1 1505 2 High Conductance Low Leakage Diode

1505 marking

Abstract: sot-23 marking 113 MMBD1501 MMBD1501A MMBD1503 MMBD1503A MMBD1504 MMBD1505 fairchild
Contextual Info: Connection Diagrams 3 3 1501 11 1 2 1 1504 3 2 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 SOT-23 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A A11 A13 A14 A15 1 3 3 1503 2NC 1 2 3 1505 2 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

P6SBMJ24A

Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current

EPCOS 156 35v

Abstract: F2225 B41857-A9107-M a9335 K2476 A1335 F2226 a7338 A1105-M epcos 336 16v
Contextual Info: Single Ended LL – Capacitors High Reliability B41857/B43857 Construction Radial leads Charge discharge proof, polar Aluminum case with insulating sleeve Minus pole marking on case surface Stand off rubber seal Case with safety vent from diameter 6,3 mm Features

MMBD1500

Abstract: MMBD1503 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 A1505
Contextual Info: Connection Diagrams 3 3 1501 11 1 2 1 1504 3 2 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 SOT-23 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A A11 A13 A14 A15 1 3 3 1503 2NC 1 2 3 1505 2 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

jedec package MO-269

Abstract: MT41J128M SSTE32882 micron ddr3 2133 MT18JDF25672PDZ-1G4
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) Options Marking • Operating temperature

a1277

Abstract: a968 a1684 B41822 b43822 A4108 A1567 A1474 a933 B41835
Contextual Info: Single Ended GP - Capacitors B 41821 Standard Series - 85°C B 43821 Construction Radial leads Charge-discharge proof, polar Aluminum case, insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Miniaturized dimensions High CV product, i.e. Very compact

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

HY62CT081

Abstract: hy62ct081e HY62CT08081E
Contextual Info: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load

HY62CT08081E

Abstract: HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I
Contextual Info: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load