128KX16BIT Search Results

HY62UF16201A-I

Abstract: HY62UF16201A
Contextual Info: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

Contextual Info: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

SM-1994

Contextual Info: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The

SM-1994

Contextual Info: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

HY62UF16201A

Abstract: HY62UF16201A-I HY62UF16201AF HYUF621 REV08
Contextual Info: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 07 08 History Draft Date Remark Divide output load into two factors Dec.10. 2000 Final - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW

HY62QF16200A

Contextual Info: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

HY62SF16201A

Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
Contextual Info: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: HY62LF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 History Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information

kor 2001

Abstract: MARKING HYNIX Origin Country HYNIX Origin Country
Contextual Info: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 07 History Draft Date Remark Divide output load into two factors Dec.10. 2000 Final - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW

Contextual Info: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

Contextual Info: HY62SF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16201A is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62SF16201A uses high performance full CMOS process technology and designed for high speed low

hynix hy

Abstract: HY62LF16206A HY62LF16206A-LT12C 48-TSOP1 MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1
Contextual Info: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration

HY62SF16201A

Abstract: HY62SF16201A-I
Contextual Info: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

MARKING HYNIX

Abstract: MARKING HYNIX Origin Country
Contextual Info: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration

MARKING HYNIX Origin Country

Contextual Info: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

Contextual Info: HY62QF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62UF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16200A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62UF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16201A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62QF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16200A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: Y62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention • Standard pin configuration

Contextual Info: HY62SF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62SF16200A uses high performance full CMOS process technology and is designed for high speed and

EM128J16B

Abstract: EM128J16T
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128J16 Preliminary EM128J16 128Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128J16 is an integrated memory device

DSP56F803

Abstract: DSP56F80X 64Kx16-bit
Contextual Info: BR1537/D Preliminary Information . APPLICATIONS: Steppers and Encoders Home Appliance Controls Integrated with Voice Control Smart Appliances Home Security Digital Telephone Answering Machine Engine Management Power Line Modem Servo Drives Automotive Control