MARKING 4D NPN Search Results
MARKING 4D NPN Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TPCP8513 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet | ||
| TTC5810 |
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NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini | Datasheet | ||
| TTC019 |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini | Datasheet |
MARKING 4D NPN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2N6603
Abstract: 2n6603 transistor 2N6603 JANTX marking code GNF 2n6604 jantxv 2N6604 2n6603 jan
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MIL-PRF-19500/522A MIL-S-19500/522 2N6603 2N6604 MIL-PRF-19500. 2n6603 transistor 2N6603 JANTX marking code GNF 2n6604 jantxv 2N6604 2n6603 jan | |
TRANSISTOR SUBSTITUTION 1993
Abstract: 2N6301 JANTX 2N6300 2N6301 JANTX2N6300 MIL-PRF19500 CC 3053
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MIL-PRF-19500/539B MIL-S-19500/539A 2N6300, 2N6301 MIL-PRF-19500. TRANSISTOR SUBSTITUTION 1993 2N6301 JANTX 2N6300 JANTX2N6300 MIL-PRF19500 CC 3053 | |
2N5685
Abstract: 2N5686 3041 v 464c
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MIL-PRF-19500/464C MIL-S-19500/464B 2N5685 2N5686, MIL-PRF-19500. 2N5686 3041 v 464c | |
equivalent transistor 2N1711
Abstract: 2N1711 2N1890 equivalent 2N1711S 2N1890 2N1890S transistor 2N1711 E11051 transistor TL 431 g
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MIL-PRF-19500/225F MIL-S-19500/225E 2N1711, 2N1711S, 2N1890, 2N1890S, MIL-PRF-19500. equivalent transistor 2N1711 2N1711 2N1890 equivalent 2N1711S 2N1890 2N1890S transistor 2N1711 E11051 transistor TL 431 g | |
transistor ignition circuitContextual Info: BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as |
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BU323Z OT-93/TO-218 O-220 BU323Z/D transistor ignition circuit | |
BU323ZG
Abstract: transistor marking 4D transistor ignition circuit WCLA ONSEMI 717 TRANSISTOR BU323Z
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BU323Z BU323Z BU323Z/D BU323ZG transistor marking 4D transistor ignition circuit WCLA ONSEMI 717 TRANSISTOR | |
2N2708Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/302C 1 August 1999 SUPERSEDING MIL-S-19500/302B 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, |
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MIL-PRF-19500/302C MIL-S-19500/302B 2N2708, MIL-PRF-19500. T0-72) 2N2708 | |
2N3442
Abstract: MIL-PRF19500 JANTX 2222 2N3442 JAN transistor d 331 data
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MIL-PRF-19500/370D MIL-S-19500/370C 2N3442, MIL-PRF-19500. 2N3442 MIL-PRF19500 JANTX 2222 2N3442 JAN transistor d 331 data | |
2N335
Abstract: 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN
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MIL-S-19500/37E MIL-S-19500/37D 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N335 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN | |
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Contextual Info: BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as |
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BU323Z OT-93/TO-218 O-220 BU323Z/D | |
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Contextual Info: BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as |
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BU323Z BU323Z BU323Z/D | |
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Contextual Info: SO T8 9 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. |
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PBHV8540X SC-62) PBHV9040X. AEC-Q101 | |
2N7368
Abstract: MC 3041
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MIL-PRF-19500/622A MIL-S-19500/622 2N7368 MIL-PRF-19500. MC 3041 | |
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Contextual Info: BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as |
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BUB323Z BUB323Z BUB323Z/D | |
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a6251
Abstract: 2N6249 2N6250 2N6251 QPL-19500 A6249
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MIL-PRF-19500/510C MIL-S-19500/510B 2N6249, 2N6250, 2N6251 MIL-PRF-19500. a6251 2N6249 2N6250 2N6251 QPL-19500 A6249 | |
2N3442 CR
Abstract: 2N3442
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MIL-PRF-19500/370G MIL-PRF-19500/370F 2N3442, MIL-PRF-19500. 2N3442 CR 2N3442 | |
BC849W
Abstract: BC850W BC859BW BC859CW BC859W BC860BW BC860CW BC860W marking 4d npn
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M3D187 BC859W; BC860W OT323 BC849W BC850W. 115002/00/04/pp7 BC850W BC859BW BC859CW BC859W BC860BW BC860CW BC860W marking 4d npn | |
diode cc 3053
Abstract: cc 3053 diode 2N6383 2N6384 2N6385 MIL-PRF19500 K 3053 TRANSISTOR
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MIL-PRF-19500/523B MIL-S-19500/523A 2N6383, 2N6384, 2N6385, MIL-PRF-19500. diode cc 3053 cc 3053 diode 2N6383 2N6384 2N6385 MIL-PRF19500 K 3053 TRANSISTOR | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W PINNING FEATURES |
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M3D187 BC859W; BC860W OT323 BC849W BC850W. 115002/00/04/pp7 | |
2N7373
Abstract: 2N7373 transistor 2N5004
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MIL-PRF-19500/613A MIL-S-19500/613 2N7373, MIL-PRF-19500. O-254AA) 2N7373 2N7373 transistor 2N5004 | |
488e
Abstract: 2n5672 2N5672 JAN equivalent 1N1186A 2N5671
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MIL-PRF-19500/488E MIL-PRF-19500/488D 2N5671 2N5672, MIL-PRF-19500. 488e 2n5672 2N5672 JAN equivalent 1N1186A | |
01903
Abstract: diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
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MIL-PRF-19500/315F MIL-S-19500/315E 2N2880, 2N3749, MIL-PRF-19500. 01903 diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor | |
BU323Z
Abstract: BUB323Z BUB323ZG BUB323ZT4 BUB323ZT4G
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BUB323Z BUB323Z BUB323Z/D BU323Z BUB323ZG BUB323ZT4 BUB323ZT4G | |
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Contextual Info: BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount http://onsemi.com The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as |
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BUB323Z BUB323Z BUB323Z/D | |