MARKING 3G MAXIM Search Results

bc857b

Abstract: BC857C BC857C sot23
Contextual Info: BC857B BC857C SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857B 3F BC857C 3G SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE NPN COMPLEMENTARY TYPES ARE

BC856BW

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

BC857BT

Contextual Info: BC857AT/BT/CT SOT-523 Transistor PNP SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)

3D smd marking

Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_

Contextual Info: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for

Contextual Info: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

Contextual Info: TQM879026 0.7-4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure • Repeaters • LTE / WCDMA / CDMA 24 Pin 4x4 mm leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

Contextual Info: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

TQM879028-PCB2140

Contextual Info: TQM879028 0.7−4.0 GHz ½ W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 24 Pin 4x4 mm Leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 23 22 21 20 19 Pin 1 Marking

Contextual Info: DB3J208K Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3G  Packaging DB3J208K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

1N4150

Abstract: 1N41
Contextual Info: 1N4150 High-speed switching diode Features 1. High reliability 2. High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Repetitive peak reverse voltage

BAT42

Contextual Info: BAT42/BAT43 Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

bav21

Contextual Info: BAV19 thru BAV21 Small-Signal Diodes Features High reliability Applications For general purpose Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current Type Unit VRRM 120 V BAV20

bat48

Contextual Info: BAT48 Schottky Barrier Diode Features 1. High reliability 2. Very low forward voltage 3. Small surface mounting type Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage

bat85

Abstract: BAT85 marking
Contextual Info: BAT85 Schottky Barrier Diode Features 1. High reliability 2. Very low forward voltage 3. Integrated protection ring against static discharge Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj=25℃ Parameter

1n914

Contextual Info: 1N914 Fast switching diode Features 1. High reliability 2. High conductance 3. Fast switching speed trr≤4 ns Applications For general purpose switching applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

Contextual Info: SD103A/SD103B/SD103C Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃

1n60 diode

Abstract: 1n60 1N60P diode 1n60 1N60 Schottky DIODE 1n60p
Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

BC857

Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC857 kec
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT BC856 -80 Collector-Base

Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

CAPACITOR marking code 2j

Contextual Info: ELECTRONIC EQUIPMENT FILM CAPACITOR New! @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @Downsizing of HACB series. ?SPECIFICATIONS Items Characteristics Category temperature range Rated voltage range Capacitance tolerance Voltage proof