MARKING 3G MAXIM Search Results

BC856BW

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

3D smd marking

Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_

Contextual Info: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for

Contextual Info: DB3J208K Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3G  Packaging DB3J208K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

BAT42

Contextual Info: BAT42/BAT43 Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1N4148

Contextual Info: 1N4148/1N4448 High-speed switching diode Features 1. High reliability 2. High speed trr≤4 ns Applications Extreme fast switches Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 100 V Reverse voltage VR

bat48

Contextual Info: BAT48 Schottky Barrier Diode Features 1. High reliability 2. Very low forward voltage 3. Small surface mounting type Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage

1n914

Contextual Info: 1N914 Fast switching diode Features 1. High reliability 2. High conductance 3. Fast switching speed trr≤4 ns Applications For general purpose switching applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

Contextual Info: SD103A/SD103B/SD103C Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃

BC857

Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C

Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

CAPACITOR marking code 2j

Contextual Info: ELECTRONIC EQUIPMENT FILM CAPACITOR New! @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @Downsizing of HACB series. ?SPECIFICATIONS Items Characteristics Category temperature range Rated voltage range Capacitance tolerance Voltage proof

BC557 sot package sot-23

Abstract: BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1 Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted

Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1T • Features ● Small size and lightweight For PCB size reduction and lightweight products ● High reliability

recommended land pattern for 0201

Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1T n Features l Small size and lightweight For PCB size reduction and lightweight products l High reliability

0201 resistor

Abstract: resistors 0201
Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1T n Features l Small size and lightweight l High reliability Metal glaze thick film resistive element and three layers of electrodes

Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2012, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1W, 1WZ n Features l Small size and lightweight For PCB size reduction and lightweight products l High reliability

BC856BW

Contextual Info: Transistors IC SMD Type BC856W,BC857W,BC858W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage VCBO -80 -50 -30 V Collector-emitter voltage

3F smd transistor

Abstract: 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC856W,BC857W,BC858W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage

Contextual Info: BC857T PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-523 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic

marking 3F transistor sot-23

Contextual Info: BC857 PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic

Contextual Info: BC857W PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic