MARKING 3BS Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: MT8D88C132 S , MT16D88C232(S) 4MB, 8MB DRAM CARDS MICRON I TECHNOLOGY. INC. DRAM CARD 4,8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access -6

3BS transistor

Abstract: S0642
Contextual Info: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

3BS transistor

Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75

3BS transistor

Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75

TME57

Abstract: marking code 1AW 27-D27 E221SD1CGE PT4E ic635
Contextual Info: Sealed* Snap-Acting Momentary Pushbutton Switches E020 Series •process sealed-withstands soldering and cleaning processes. SWITCHES WITH STANDARD OPTIONS C8K MARKING ON THIS SIDE EPOXY SEAL .030 TYP. 76 3 NC 2 NO “ 1 .1 8 5 TYP. T 4 , ?0) COMM. -^ .2 6 0 k (6,6 0)

marking code 1AW

Abstract: tme57 E221SD1CGE h032
Contextual Info: Sealed* Snap-Acting Momentary Pushbutton Switches E020 Series •process sealed-withstands soldering and cleaning processes. SWITCHES WITH STANDARD OPTIONS C8K MARKING ON THIS SIDE EPOXY SEAL .030 TYP. 76 3 NC 2 NO “ 1 .1 8 5 TYP. T 4 , ?0) COMM. -^ .2 6 0 k (6,6 0)

3BSE012770

Abstract: report of home automation system 800xa arc welding 3BSE030335R101
Contextual Info: ABB Automation Segment Guidelines 3BSE025935 Issued by department: Date: Lang.: Revision: Page: ATCE/PA/MS 2003-12-09 En D 1 6 Category: Approved IndustrialIT Basic and Extended Set of Aspects Summary: This document aims at giving the audience guidelines of what to consider when

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

transistor packing code 3f

Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

MARKING 3FS

Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)

marking code MS SOT323

Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

top marking 1B sot23

Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

15j01

Abstract: philips 0805 2r 104 pf Philips X7R capacitors 0805 philips 0805 2r 104 CECC 32 101-801 Philips 0805 capacitors
Contextual Info: Product specification Philips Components Surface mounted ceramic multilayer capacitors Class 2, X7R QUICK REFERENCE DATA FEATURES • Seven standard sizes VALUE DESCRIPTION • High capacitance per unit volume Rated voltage U r DC • Supplied in tape on reel or in bulk

DIN 6784

Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

E44145

Abstract: j927
Contextual Info: rrrnra s e r ie s m2 r o c k e r I s w it c h e r SUBMINIATURE/WASHABLE/PCB MOUNTING TYPICAL SWITCH ORDERING EXAMPLE M2T 8 TX G POLES 1 2 ROCKERS/PADDLES SPDT DPDT RATINGS W Silver Rated 6A @ 125V AC & 3A @ 250V AC Gold over Silver Rated A 6A @ 125V AC & 0.4VA

RBS 6402

Abstract: smd code 1Bs smd fuse marking code TN solar cell cnc TRANSISTOR SMD MARKING CODE kn smd transistor 5Bs smd transistor marking DK RH smd transistor marking cf rh RBS 2202 telecom rbs 6102
Contextual Info: Contents 2011 RoHS Compliant CERAMIC METALIZED SUBSTRATE Ceramic Metalized Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F1-F2 CIRCUIT PROTECTION PRODUCTS Page Over-Current Protection CF/CFS

CI853

Abstract: AI810 connection diagram SS823 CI840A CI854A CI868 PM861 ABB AI810 wiring tb840a TB825
Contextual Info: IndustrialIT AC 800M and S800 I/O Getting Started IndustrialIT AC 800M and S800 I/O Getting Started NOTICE This document contains information about one or more ABB products and may include a description of or a reference to one or more standards that may be generally relevant to

Contextual Info: r z T S G S -T H O M S O N ^ 7 # M û t M M iÊ ÎK îO T C S T N 22 STARTLIG HT FEATURES • Vbr: 1200-1500V and 1000-1600V versions ■ Ih > 175mA ■ Iqt <1 -5 mA t> k SOT 194 Plastic DESCRIPTION The TN22 is an high performance asymetrical SCR in high voltage PNPN diffused planar tech­

BC856B E6327

Abstract: BC846 Infineon BC856-BC860 BC857 st DIN 6784 power 22E BC856B BC857A BC860 BC846
Contextual Info: BC856.BC860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN

flash device MARKing intel

Abstract: PP845 PP865 F250 PP846 intel flash marking
Contextual Info: Version 5.0 Panel 800 - Specifications Specifications Specifications Display Display backlight CPU Memory, flash Memory, RAM Flash memory for application Real time clock Power supply Ambient temperature Relative humidity Housing material Front side material

LCD 1604

Abstract: UL 1604 F250 PP845 flash device MARKing intel
Contextual Info: Version 4.1 Panel 800 - Specifications Specifications Specifications Display Display backlight CPU Memory, flash Memory, RAM Flash memory for application Real time clock Power supply Ambient temperature Relative humidity Housing material Front side material

3BS transistor

Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.