MARKING 200B Search Results

marking a86

Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

b72 voltage regulator

Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

B83 004

Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.

oni 350

Abstract: ZFW MARKING JN2FS T700238 2FCF SJ-1003 SJ100301 marking zfw
Contextual Info: %J1 B DATE JK f t REV. 8 2 5 5 0 l PS DCN m & W. f t « D E S C R IP T IO N NO. M s m A PPD . a üé CHK. DR. * M A PPD . 'ON ONI MVÜQ W HITE MARKING AS NOTE!. CONTACTS ARE SOLD SEPARATELY. THE APPLICABLE CONTACTS ARE LISTED IN THE TABLE-1. 2. THE PART NUMBER SHALL SPECIFY THE AVAILABILITY OF THE BUSHING, AND THE APPLICABLE CABLE SIZE.

Contextual Info: CYD02S36V18-200BBXC Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CYD02S36V18-200BBXC Automotive Qualified N Min. Operating Voltage V

Contextual Info: Email: info@grupopremo.com Web: http://www.grupopremo.com • • • • • Open loop Hall Effect sensor. Bipolar power supply. High currents measurement. High precision. High linearity. T Nominal current HCT-65BP1 HCT-85BP1 HCT-100BP1 HCT-125BP1 HCT-200BP1

ACS-51

Abstract: r2001 200B
Contextual Info: i frossEors h D AT E REV. ‘ ON 0 N I M V H Q DON "TUT NO. a DR. D E S C R I PTIO N g APPD. APPD. OHK. 10.Ap r.2001 47964 ADDED N0TE4. E.MATSUM0T0 2 8 .S e p .2 0 0 1 48849 ADDED ITEM E.MATSUMOTO S.NANAO 4 .J u n.200B 52239 REVISED E.MATSUMOTO S.NANAO

thyristor 072 0043

Abstract: scr 072 0043 FLC10-200D smd THYRISTOR scr firing gas ignition DIODE smd marking E3 K1621 diode smd ED 74 Zener diode smd marking 27 lighter ignitor
Contextual Info: FLC10-200D FLC10-200B  Application Specific Discretes A.S.D.TM FIRE LIGHTER CIRCUIT TARGET SPECIFICATION FEATURES SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY

Contextual Info: D2 PA K PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified

Contextual Info: FLC10-200D FLC10-200B Application Specific Discretes A.S.D. FIRE LIGHTER CIRCUIT TARGET SPECIFICATION FEATURES • SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION ■ DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION

SMD Marking 4570

Abstract: PSMN070-200P PSMN070-200B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA

Contextual Info: SGS-THOMSON CLP30-200B1 m Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards

tip 220

Abstract: CLP200M CLP30-200B1 LCP1511D VDE0433 VDE0878
Contextual Info: CLP30-200B1 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : Analog and ISDN line cards PABX DESCRIPTION

Contextual Info: 7/ SGS-THOMSON CLP30-200B1 ILI Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipm ent submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards

CLP200M

Contextual Info: CLP30-200B1  Application Specific Discretes A.S.D OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards ■ PABX

CLP30-200B1RL

Contextual Info: CLP30-200B1 ASD Application Specific Devices Overvoltage and overcurrent protection for telecom line Features • ■ ■ ■ Dual bidirectional protection device High peak pulse current: – IPP = 40 A (5/310 µs surge) – IPP = 30 A (10/1000 µs surge)

ptc overvoltage protections application note

Abstract: CLP30-200B1 CLP30-200B1RL MM1315
Contextual Info: CLP30-200B1 ASD Application Specific Devices Overvoltage and overcurrent protection for telecom line Features • ■ ■ ■ Dual bidirectional protection device High peak pulse current: – IPP = 40 A (5/310 µs surge) – IPP = 30 A (10/1000 µs surge)

Contextual Info: BCM Bus Converter BCM48B x 040 y 200B00 S C NRTL US Unregulated DC-DC Converter FEATURES DESCRIPTION The VI Chip® bus converter is a high efficiency >94% Sine Amplitude Converter (SAC™) operating from a 38 to 55 Vdc primary bus to deliver an isolated, unregulated 3.2 to 4.6

stac2942

Abstract: STAC2942B
Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

stac2942

Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

SD4933

Abstract: M177 marking code h4 capacitor transistor marking code 325
Contextual Info: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European

Contextual Info: SD4933 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz • In compliance with the 2002/95/EEC European

FERRITE TOROIDAL CORE DATA

Abstract: STAC2932B ferrite toroidal
Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive