MARKING 14E Search Results

Contextual Info: KEMET Part Number: C0805N561J5GSH7189 C0805N561J5GSH7189, CDR31BP561AJSS-T&R Capacitor, ceramic, 560 pF, +/-5% Tol, 50V, C0G, 0805 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol T 1.3

Contextual Info: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for

24EB60

Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Contextual Info: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC

varistor ve 17

Abstract: VZA048XX vzd 300 VZD275 VZD420XX VZA060 VZC460 VZD275XX VZD250
Contextual Info: I ’iGSôaoS 0 Q Q 0 3 0 Ô THOMSON COMPONENTS THOMSON PASSIVE 14E 0 4 | VZ METÄL OXIDE VARISTOR PHYSICAL CHARACTERISTICS UL-recognized File Number E84108 S TABLE OF VALUES T max T max PART NUMBER VZG048XX VZG060XX VZG075XX VZG095XX VZG106XX VZG130XX VZG150XX

d1711

Abstract: MMBC1009F2
Contextual Info: S AMSUNG SEMí CONOUCíOR INC MMBC1009F2 14E D | ?*ii,4m3 0 00 72 3 0 ë | NPN EPITAXIAL SILICON TRANSISTOR T-31-19 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MMBA812M7

Abstract: MMBT5086 marking ja
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBA812M7 14E D §7 *11,4142 0 0 0 75 31 , T | PNP EPITAXIAL SILICON TRANSISTOR T-^l-Oq GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MMBC1009F4

Abstract: marking am
Contextual Info: ¡SAMSUNG SEMICONDUCTOR INC MMBC1009F4 14E D _ | 7 ^ 4 1 4 2 0007240 0 j T ~3/~ /? NPN EPITAXIAL SILICO N TRANSISTOR AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage

MMBC1009F3

Contextual Info: 'SAMSUNG SEM ICO NDUCTOR .INC MMBC1009F3 14E D |71k41»l2 0007531 4 f NPN EPITAXIAL SILICON TRANSISTOR T-31-19 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 öC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2929 transistor

Abstract: MMBT6427 MMBTA14 SOT-23 J
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage

MMBA811C7

Abstract: MMBT5086 transistor marking fl VC80
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current

514 transistor

Abstract: MMBC1622D7 b 514 transistor MMBC1622D6
Contextual Info: S A MS UN G SEMICO ND UCT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR — — “ — — :- :- rT i < v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C ! i Characteristic | Collector-Base Voltage

MMBT5086

Abstract: MMBTA70 transistor 571 MARKING VA SOT23
Contextual Info: SA MS UN G SEMICONDUCTOR INC MMBTA70 14E I 7‘1fc>‘1142 00073CU S | PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR f SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

MMBC1009F5

Abstract: transistor marking HB sot-89
Contextual Info: SAMSUNG S E M I C ON DU CT OR INC MMBC1009F5 14ED ^7^4145 0007241 5 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 9 I AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MMBC1623L6

Abstract: MMBC1623L3
Contextual Info: SA M S U N G SEMICONDUCTOR INC MMBC1623L6 14E 0 7 ^ 4 1 4 2 00072SQ 3 | NPN EPITAXIAL SILICON TRANSISTOR T -Ä t-fa AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voftage CoUector-Emitter Voltage Emitter-Base Voltage

la 4142

Abstract: MMBA811C6 MMBT5086
Contextual Info: SA MS UN G SEMICONDUCTOR INC MMBA811C6 14E D | 711,4142 □ DO?aati 1 | PNP EPITAXIAL SILICON TRANSISTOR _ J T - 23- DRIVER TRANSISTOR t °i SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MMBTA06

Abstract: MPSA05 Transistor driver TRANSISTOR MARKING FA
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA06 14E D | 7 c! b 4 1 4 a 0007531 fi | NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Ennitter Voltage Emitter-Base Voltage Collector Current

MARKING BL

Abstract: fS 4142 transistor 513 MMBC1622D6
Contextual Info: SAMSUNG S EMICONDUCTOR INC MMBC1622D6 14E D ^7Tt.4145 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Cotector-Emitter Voltage Emitter-Base Voltage Collector Current

BCW33

Abstract: MMBT5088
Contextual Info: SAMSUNG SEMICONDUCTOR INC BCW33 14E D j 0007207 2 | NPN EPITAXIAL SILICON TRANSISTOR T - ^ - !‘ utlMCKAL r U n r U o t 1rlAINold 1UH SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C S ym bol C h a ra c te ris tic ; Collector-Base Voltage ' Collector-Emitter Voltage

KSR1107

Abstract: KSR2107 t313
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E O | 714,4145 0007123 7 | PNP EPITAXIAL SILICON TRANSISTOR KSR2107 SWITCHING APPLICATION T-31-&#39;3 Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit . • Built in bias Resistor (R,=22KO, R,=47KO)

la 4142

Abstract: MMBT5088 MMBT6429 Scans-0014323
Contextual Info: SAMSUNG SEMI C ONDU CT OR INC 14E MMBT6429 ' D § 7 ^ t , 41 42 0007507 4 | NPN EPITAXIAL SILICON TRANSISTOR : " AMPLIFIER TRANSISTOR r'r-avfl" SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage

BCW30

Abstract: MMBT5086 icao
Contextual Info: SAMS UN G SEMICON DUC TO R INC BCW30 14E 0 | 7*^4142 0007204 7 | PNP EPITAXIAL SILICO N TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 “ABSOLUTE MAXIMUM RATINGS Ì l i f 25°C ' Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base: Voltage

MMBT3904

Abstract: MMBT4124 TRANSISTOR 636
Contextual Info: ¡SAM SUNG SEM ICO NDUCTOR . INC MMBT4124 14E D | ?*1b4:t<l2 O O O T a tt. 7 | NPN EPITAXIAL SILICON TRANSISTOR .Tj-aR-fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

BCW71

Abstract: MMBT5088
Contextual Info: SAMSUNG SEMICONDUCTOR INC _ BGW71 14E D | 00 0 7 2 1 A 7 Jjj NPN EPITAXIAL SILICON TRANSISTOR T -« g q GENERAL PURPOSE TRANSISTOR - ft S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C | Characteristic i Collector-Base Voltage j Collector-Emitter Voltage I Emitter-Base Voltage

JB marking transistor

Abstract: transistor marking JB MMBT5550 marking JB
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic