71K41 Search Results

MMBC1009F3

Contextual Info: 'SAMSUNG SEM ICO NDUCTOR .INC MMBC1009F3 14E D |71k41»l2 0007531 4 f NPN EPITAXIAL SILICON TRANSISTOR T-31-19 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 öC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or

Contextual Info: SAMSUNG S E M I C O ND U CT OR INC D2 ' ' ¡>Ëj 7 ^ 4 1 4 2 ' KS5112 OOOSbSl 0 §1 5651 D ^ ° *CMOS DIGITAL INTEGRATED CIRCUIT 5-FUNCTION 6-DIGIT WATCH CIRCUIT FOR TRIPLEXED LCD. The KS5112 is a CMOS LSI which contains all logic necessary to implement a five function, six digits liquid crystal display watch. The

KM62256P-10

Contextual Info: S A M S U N G S E M I C O N D U C T O R INC TÖ ' " :" DE| 7 ^ 4 1 4 2 □□□5545 T-46-23-14 KM62256P/KM62256LP CMOS SRAM 32K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 0 0 ,1 2 0 ,150ns max. • Low Power Dissipation Standby: 0.55mW (max.).

Contextual Info: KMM5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000BV is a 1M bits x 32 Dynam­ ic RAM high density memory module. The Samsung KMM5321000BV consist of eight CMOS 1 Mx 4 bit

256x16* STATIC RAM

Abstract: 10 35L W9 10 35L W1 10 35L W8 sc 4145 KM4216C256 KM4216V256 74143 10 35L a8 capacitor 0051142
Contextual Info: CMOS VIDEO RAM KM4216C/V256 2 56K X 16 B it CMOS Video HAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port