IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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mmbt2222apzt2222aot-23ot-223+5mmpq2222soic-16nmt2222ic 7403pn2222a
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MMBT2907A
Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16
Contextual Info: PN2907A MMBT2907A PZT2907A C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .2B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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PN2222A
Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
Contextual Info: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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PR63
Abstract: PN2907A MMBT2907A MMPQ2907 NMT2222 NMT2907 PZT2907A SOIC-16 mark 2F
Contextual Info: PN2907A PZT2907A MMBT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 200 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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pn2907apzt2907ammbt2907aot-23+7ot-223nmt2907mmpq2907soic-16pr63nmt2222mark 2f
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2N3904 SOT-23
Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
Contextual Info: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to
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2n3904mmbt3904ot-23mmpq3904+13pzt3904soic-16ot-2232n3904 sot-23mark e4 sot-23mmbt3904 1a2n3904 transistor2n3904 equivalent2n3904 data sheet2n3904 diefairchild sot-223 markh 2n3904switch fairchild
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IC 7403
Abstract: PN2222A npn general purpose amplifier MMBT2222A MMPQ2222 NMT2222 PZT2222A SOIC-16 IC VS 1307 national PN2222A
Contextual Info: PN2222A MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 100 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced
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pn2222ammbt2222apzt2222aot-23+8ot-223mmpq2222soic-16nmt2222ic 7403npn general purpose amplifieric vs 1307national pn2222a
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FAIRCHILD SOT-223 MARK
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.
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pn2222ammbt2222ammpq2222nmt2222+4pzt2222aot-23ot-223fairchild sot-223 mark
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PN2222A le
Abstract: oKH sot-23 PZT2222A on MMBT2222AI MMPQ
Contextual Info: PN2222AI MMBT2222AI MMPQ2222 I NMT2222 I PZT2222A D iscrete POWER & Sig n a l Technologies Na t ion a I S e m i c o n d u c t o r ' PN2222A PZT2222A MMBT2222A SOT-23 B SOT-223 Mark: 1P NMT2222 MMPQ2222 SOT-6 SOIC-16 B1 M a r i e .1 B NPN General Purpose Amplifier
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pn2222aimmbt2222aimmpq2222nmt2222+9pzt2222apn2222ammbt2222aot-23ot-223pn2222a leokh sot-23pzt2222a onmmpq
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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hvd141/142hzu16hzu10hzu18+16hzu11hzu20hzu12hzu22hzu13hzu24marking code 62zphilips surface mount zener diode v6marking 68m sot 23-51s2473 equivalentdiode rohm 3pin marking a7ips302marking 62z sot23diode s4 68a1ss81 diode equivalent1s2473 diode equivalent
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capaCITIVE proximity switch block diagram
Abstract: ic-dp Dp 104 g009 SOT223-4L G003 G008 sot223-4 PI SOT23
Contextual Info: ar y n i im prel iC-DP HIGHSIDE SWITCH Rev B1, Page 1/7 FEATURES APPLICATIONS ♦ 36 V highside switch/level shifter ♦ p-channel output driver without charge pump for short activation time ♦ Decoupling of input and output reference voltages SOT23-6L
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ot23-6lot223-4lsc59-3ld-55294+9capacitive proximity switch block diagramic-dpdp 104g009sot223-4lg003g008sot223-4pi sot23
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Contextual Info: ar y n i im prel iC-DN LOWSIDE SWITCH Rev B1, Page 1/7 FEATURES APPLICATIONS ♦ 36 V lowside switch/level shifter ♦ Decoupling of input and output reference voltages SOT23-6L permits control by 5V logic ♦ 200 mA of output current ♦ Short-circuit protected
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sc59
Abstract: G003 G008 mark B1 sot23
Contextual Info: ar y n i im prel iC-DN LOWSIDE SWITCH Rev B1, Page 1/7 FEATURES APPLICATIONS ♦ 36 V lowside switch/level shifter ♦ Decoupling of input and output reference voltages SOT23-6L permits control by 5V logic ♦ 200 mA of output current ♦ Short-circuit protected
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marking code V6 33 surface mount diode
Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
Contextual Info: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3
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ade-508-010aade-508-016ade-508-017hvl355b+14hvl358bhvl368bhvl375bhvl385bmarking code v6 33 surface mount diodephilips surface mount zener diode v6zener diode applicationips30204bz1w402diode marking s4 59amarking 513 sod-323marking 621 sod-3231w379
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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hsn278wkhzc10hzc11hzc12+16hzc13hzc15hzc16hzc18hzc20hzc221s2473 diode equivalent1s2473 equivalentdiode cross reference 1s2473diode marking s4 59amarking 62n sot231s2471 equivalentuhf/vhf tv tuner hitachidiode 1n4148 ll-34diode zenner c251n52xx
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jrc 2002
Abstract: 2388+84+JRC sot 23 mark 64 5 PIN CODE B2 mark G1 SOT-23 jrc 8 pin MARK D2 SOT23 jrc 14 pin A/2043 JRC jrc 11
Contextual Info: STANDARD MARK LAYOUT The standard mark layout of our packages are as follows. For further information, please contact to our sales offices. <Lead Insertion Type> Number of Name pins Mark Layout Device Device name TO-220 JRC Logo Device code Serial No. 3 ,4 ,5
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PAA 737
Abstract: MAX6145 ebaa
Contextual Info: 75- 7777: Rev. 0; 12/96 JVWYXAJVX SOT23, Low-Cost, Low-Dropout, 3-Terminal Voltage References General Description Initial accuracy for these devices is ±1%. The output temperature coefficient is typically 15ppm/°C, and guarante ed to be less than 50ppm /°C except
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TK631xxS
Abstract: mark A1 SOT23 TK631XXBB6 TK631XXH SON2017-6 TK631 A1 MARK not sot23-5 battery protection ic sot23-5
Contextual Info: Io=200mA high accuracy ±1% CMOS LDO Regulator IC Io=200mA ±1%高精度出力 CMOS低飽和レギュレータIC TK631XXBB6 TK631XXH TK631XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK631XXBB6 type, the TK631XXH type and the TK631XXS type are CMOS LDO Regulator ICs. The
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TK637xxS
Abstract: TK637 SON2017-6 TK637XXH mark A1 SOT23 mark B1 sot23
Contextual Info: Io=150mA Iq=10 A capacitor-less CMOS LDO Regulator IC Io=150mA Iq=10μA キャパシタレスCMOS低飽和レギュレータIC TK637XXAB6 TK637XXH TK637XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK637XXAB6 type, the TK637XXH type and the TK637XXS type are CMOS LDO Regulator ICs. The IC
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Contextual Info: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14
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sot23 mark code CB
Abstract: sot23 mark code AE ZMDC830 marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5
Contextual Info: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase
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mark B1 sot23
Contextual Info: POWER&RF Io=150mA high accuracy ±1% CMOS LDO regulator IC Io=150mA ±1%高精度出力 CMOS低飽和レギュレータIC TK631XXB TK631XXH TK631XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK631XXB type, the TK631XXH type and the TK631XXS type are CMOS LDO regulator ICs. The
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TK63730S
Contextual Info: POWER&RF Io=100mA Iq=10µA capacitor-less CMOS LDO regulator IC Io=100mA Iq=10µA キャパシタレスCMOS低飽和レギュレータIC TK637XXB TK637XXH TK637XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK637XXB type, the TK637XXH type and the TK637XXS type are CMOS LDO regulator ICs. The
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MMBT100
Abstract: MMBT100A PN100 PN100A
Contextual Info: NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 TO-92 1 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A 1 SOT-23 1. Base 2. Emitter 3. Collector
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PS2019
Abstract: PI74FCT521T PI74FCT521TH PI74FCT521TL tssop 20 PERICOM 150 MIL PACKAGE mark a7 sot23
Contextual Info: PI74FCT521T 8-Bit Identity Comparator PI74FCT521T
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