M5364 Search Results

Contextual Info: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE

Contextual Info: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM

Contextual Info: DRAM MODULE M53640405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640405CY0/CT0-C DRAM MODULE

Contextual Info: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C

64mb edo dram simm

Abstract: K4E160411C
Contextual Info: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C

Contextual Info: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C

capacitor taa

Contextual Info: DRAM MODULE M53640405BY0/BT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M5364 Construction Diameters (In) 1) Component 1 6 X 1 COND a) Conductor 20 (7/28) AWG TC 0.038 b) Insulation 0.016" Wall, Nom. PVC

Contextual Info: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D

DQ9-DQ12

Contextual Info: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C

pico electronics transformers h5460

Abstract: M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300
Contextual Info: P IC O ’S Ultra-Miniature PULSE Transformers .n i!* # » no "/« MAX ” OIA MSERIES rB fO _ . 2 5 0 t 010 025 Plug-In 3 5 MAX DIA 14.9 MAX OlA) 16 .3 5 t r* 7/ M MAX 5.55 M AX)£ 035* (0 91 00 i.* 5 .2 5,4 «6.351 i '/ j iV * (38.1 + 6 .3 5 ) , I.so i t s

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E 3 WÊ 7 ^ b 4 m 2 DGlSeflG b7E • SMGK DRAM MODULES M5364000H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: M5364000H-6 • • • • • • • tflA C tcA C Í rc 60ns 15ns

KM416C4104AS

Abstract: KM416C4104a KM44C4005BS
Contextual Info: Preliminary M5364005ASW/ASWG DRAM MODULE M5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung M5364005A

Contextual Info: M5364003BK/BKG DRAM M5364103BK/BKG M5364003BK/BKG & M5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG G EN ER AL DESC RIPTIO N The Samsung M53640 1 03BK is a 4M bit x 36

Contextual Info: M5364000H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAC M5364000H-6 60ns 15ns M5364000H-7 70ns 2 0 ns 130ns M5364000H-8 80ns 2 0 ns 150ns The Samsung M5364000H is a 4M bits x 36 Dynam­

Contextual Info: DRAM MODULES M5364100H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tcAC tRC 15ns 110ns M5364100H-7 70ns 20ns 130ns M5364100H-8 80ns 20ns 150ns The M5364100H is a S ingle In-line M em ory M odule w ith edge connections and is intended fo r m ounting into

Contextual Info: M5364005BK/BKG M5364105BK/BKG DRAM MODULE M5364005BK/BKG & M5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M 53640 1 05BK is a 4M bit x 36 • Part Identification

A1KA

Abstract: KMM5364103BK
Contextual Info: M5364003BK/BKG M5364103BK/BKG DRAM MODULE M5364003BK/BKG & M5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53640 1 03BK is a 4M bit x 36 • Part Identification

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

KMM5334100

Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Contextual Info: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13

Contextual Info: SAMSUNG ELECTRONICS INC b?E j> m Tibmns M5364000B/BG o d i s i ö s sb4 • s m g k DRAM MODULES 4 M x 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tR A C tC A C t f lC M5364000B-6 60ns 15ns

M5330

Abstract: A5161
Contextual Info: PICO ’S Ultra-Miniature PU LSE Transformers SPECIFICATIONS e ML-TO31O30: • OPERATING TEMPERATURE: All unit* manufactured 1o MIL T 21036 -S5°C to +130°C FEATURES e EXTREM E RESISTANCE TO THERMAL SHOCK e ULTRA MINIATURE SIZE # BUILT TO MIL T-21036 e TERMINALS: