M5364080 Search Results
M5364080 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| M53640800CB0-C50 |
|
8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V | Original | 299.38KB | 15 | ||
| M53640800CB0-C60 |
|
8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V | Original | 299.38KB | 15 | ||
| M53640800CW0-C50 |
|
8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V | Original | 299.38KB | 15 | ||
| M53640800CW0-C60 |
|
8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V | Original | 299.38KB | 15 | ||
| M53640805BT0-C50 |
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V | Original | 445.44KB | 21 | ||
| M53640805BT0-C60 |
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V | Original | 445.44KB | 21 | ||
| M53640805BY0-C50 |
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V | Original | 445.44KB | 21 | ||
| M53640805BY0-C60 |
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V | Original | 445.44KB | 21 |
M5364080 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE |
Original |
m53640805cy0/ct0-c8mx364mx168mx36bits | |
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Contextual Info: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS. |
Original |
m53640805by0/bt0-c8mx364mx168mx36bits | |
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Contextual Info: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D |
Original |
m53640800dw0/db0m53640810dw0/db0m53640808mx36bits+3 | |
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Contextual Info: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D |
Original |
m53640800dw0/db0m53640810dw0/db0m53640808mx36bits+3 | |
DQ9-DQ12Contextual Info: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C |
Original |
m53640800cw0/cb0m53640810cw0/cb0m53640808mx36bits+4 |