M5361 Search Results

Contextual Info: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5361000B1 is a 1M bits x 36 Dynamic RAM M5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung

0015142

Contextual Info: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 M5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns M5361000B2-7 70ns 20ns

Contextual Info: DRAM MODULE M53613201BE0/BJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53613201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: DRAM MODULE M53611601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53611601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M5361 Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 20 (7/28) AWG TC 0.038 b) Insulation 0.016" Wall, Nom. PVC

Contextual Info: DRAM MODULE M53611601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53611601CE0/CJ0-C DRAM MODULE M53611601CE0/CJ0-C

Contextual Info: DRAM MODULE M53613201CE0/CJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. M53613201CE0/CJ0-C DRAM MODULE M53613201CE0/CJ0-C

pico electronics transformers h5460

Abstract: M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300
Contextual Info: P IC O ’S Ultra-Miniature PULSE Transformers .n i!* # » no "/« MAX ” OIA MSERIES rB fO _ . 2 5 0 t 010 025 Plug-In 3 5 MAX DIA 14.9 MAX OlA) 16 .3 5 t r* 7/ M MAX 5.55 M AX)£ 035* (0 91 00 i.* 5 .2 5,4 «6.351 i '/ j iV * (38.1 + 6 .3 5 ) , I.so i t s

KMM5361000/A

Contextual Info: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 M5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung M5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung M5361000A1 consist of eight CMOS 1M x4 bit

coaxial cable awm 1354

Abstract: AWM 2498 M39024/11
Contextual Info: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan

km44c1003cj

Contextual Info: DRAM MODULE M5361203AW/AWG M5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung M5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung M5361203AW consists of two CMOS

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 M5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung M5361000B is a 1M bits x 36 Dynam­ ic RAM high density memory module. The Samsung

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

KM44C1000

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14

km44c16104ak

Abstract: 44c16104
Contextual Info: DRAM MODULE M53616004AK/AKG M53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs

Contextual Info: DRAM MODULE M5361205C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE M5361205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5361205CW /CWG to M5361205C2W /C2W G caused by PCB revision .

TIC 1160

Contextual Info: M5361000A1/A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5361000A1 is a 1M bits x 36 Dynamic RAM high d e nsity m em ory m odule. The Sam sung M5361000A1 co n sist o f eig h t CMOS 1 M x 4 bit

KMM364C12

Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7Sb4142 0014517 721 M5361000B1/B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRAC tcAC tra M5361000B1-6 60ns 15ns 110ns M5361000B1-7

Contextual Info: M536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung K M M 5 3 6 1 0 0 0 A is a 1M b its X 3 6 Dynamic RAM high density m em ory module. The Samsung K M M 5 3 6 1 0 0 0 A con sist o f eight C M OS 1 M X 4 bit

Contextual Info: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E M5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung M5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung

Contextual Info: DRAM MODULE M5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE M5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5361203CW /CWG to M5361203C2W /C2W G caused by PCB revision .

M5330

Abstract: A5161
Contextual Info: PICO ’S Ultra-Miniature PU LSE Transformers SPECIFICATIONS e ML-TO31O30: • OPERATING TEMPERATURE: All unit* manufactured 1o MIL T 21036 -S5°C to +130°C FEATURES e EXTREM E RESISTANCE TO THERMAL SHOCK e ULTRA MINIATURE SIZE # BUILT TO MIL T-21036 e TERMINALS:

KMM5361003

Abstract: KMM5361003-6
Contextual Info: SAI1SUN6 ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 001525b 3S3 « S M G K M5361003/G DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5361003/G is a 1M b its x 3 6 Dynam ic RAM high density m em ory module. The Sam sung