M48F010 Search Results

A1HB

Abstract: 2764-16
Contextual Info: SEEcJ TECHNOLOGY INC 11E D a n ^ a 0DDS7?b 2 E/M48F010 1024K CMOS FLASH EEPROM 'T - M PRELIMINARY DATA SHEET Block Diagram Features • t - il- z i October 1989 12SK Byte FLASH Erasable Non-Volatile Memory U FLASH EEPROM Cell Technology » Electrical Chip and 1024 Byte Sector Erase

3XXXM

Contextual Info: 000Q E/M48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ 128K Byte FLASH Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing

Contextual Info: SEE<3 TECHNOLOGY INC HE D ainsaa q o q s 7ö 7 ? E/M48F010 PRELIMINARY DATA SHEET T -4 6 -1 3 -2 7 Ordering Information D M 48F010 ~ r Pickag» Typ* ~ T Temperatur« Rang« 1 D*vlc* D » Ceramic Dip E - - 4 0 to +85°C 128KX8FLASH EEPROM L « Ceramic Leadess Chip

Contextual Info: M48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features m 128K Byte FLASH Erasable Non-Volatile Memory m FLASH EEPROM Cell Technology • ■ ■ ■ ■ ■ ■ Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing