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    3XXXM

    Contextual Info: 000Q E/M48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ 128K Byte FLASH Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing


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