M4BF010 Search Results

Contextual Info: EM48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features m 128K Byte FLASH Erasable Non-Volatile Memory m FLASH EEPROM Cell Technology • ■ ■ ■ ■ ■ ■ Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing