E48F010 Search Results

Contextual Info: EM48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features m 128K Byte FLASH Erasable Non-Volatile Memory m FLASH EEPROM Cell Technology • ■ ■ ■ ■ ■ ■ Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing

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Abstract: 2764-16
Contextual Info: SEEcJ TECHNOLOGY INC 11E D a n ^ a 0DDS7?b 2 E/M48F010 1024K CMOS FLASH EEPROM 'T - M PRELIMINARY DATA SHEET Block Diagram Features • t - il- z i October 1989 12SK Byte FLASH Erasable Non-Volatile Memory U FLASH EEPROM Cell Technology » Electrical Chip and 1024 Byte Sector Erase

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Abstract: 48F010-200 47F010-200 47F010-250 47F010-300 48F010-250 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25
Contextual Info: - 158 — 28 F O 1O ¥ 7. 'f 7 f* > VDD as -h /m %. % «i ns 0-71) 200 200 75 50 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 47F010-250 SEEQ 0-70 250 250 100 60 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 (*C> TOD •ax (ns) 1 A SEEQ 45 TOH US 47F01Q-200

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Contextual Info: 000Q E/M48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ 128K Byte FLASH Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing