Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    M28F008 Search Results

    M28F008 Datasheets (1)

    Intel
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    M28F008
    Intel 8 MBIT (1 MBIT x 8) FLASH MEMORY Original PDF 408.16KB 28

    M28F008 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    intel 27123

    Abstract: 29043 intel motherboard 915 CIRCUIT diagram M28F008SA
    Contextual Info: ß ff llE U B lß O M y in te i M28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Very High-Performance Read — 120 ns Maximum Access Time Extended Cycling Capability — 10K Block Erase Cycles


    OCR Scan
    m28f008sa40-leadcg/sale/101789intel 27123+229043intel motherboard 915 circuit diagram PDF

    Contextual Info: in te i M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Extended Cycling Capability — 10K Block Erase Cycles Minimum — 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase


    OCR Scan
    m28f00840-lead42-leadmic00+12l17s PDF

    ana 608

    Abstract: E0000 M28F008
    Contextual Info: M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY Y High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Y Extended Cycling Capability 10K Block Erase Cycles Minimum 160K Block Erase Cycles per Chip Y Automated Byte Write and Block Erase Command User Interface


    Original
    m28f00840-lead42-leadana 608+1e0000 PDF

    ana 608

    Abstract: mc28f008 E0000 M28F008
    Contextual Info: M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY Y High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Y Extended Cycling Capability 10K Block Erase Cycles Minimum 160K Block Erase Cycles per Chip Y Automated Byte Write and Block Erase Command User Interface


    Original
    m28f00840-lead42-leadana 608+2mc28f008e0000 PDF

    intel i7 processor mtbf

    Abstract: Intel i7 MTBF 4b2l
    Contextual Info: in te i M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Extended Cycling Capability — 10K Block Erase Cycles Minimum — 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase


    OCR Scan
    m28f00842-lead402bl7501bt77fl+3intel i7 processor mtbfintel i7 mtbf4b2l PDF

    ANA 608

    Abstract: ER27
    Contextual Info: [ p f f i iy M D K g A iH n f in te i M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Extended Cycling Capability — 10K Block Erase Cycles Minimum — 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase


    OCR Scan
    m28f00842-leadana 608er27 PDF

    Contextual Info: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C


    OCR Scan
    vs28f016xsms28f016xs16-mbitve28f008+4m28f00828f016sa56-lead128-kbyte PDF

    Contextual Info: irrtel A Q W A N G B D K l F K (M Â ¥ 0 (fil M28F016SA 16 MBIT (1 MBIT x 16, 2 MBIT x 8 FLASH FI LE MEMORY User-Selectable 3.3V or 5V V q c 1 mA Typical Icc in Static Mode User-Configurable x8 or x16 Operation 100 ns Maximum A ccess Time at 5V 1 jliA Typical Deep Power-Down


    OCR Scan
    m28f016sam28f008sa16-mbitx8/x16 PDF

    MS28F016SV85

    Abstract: 297372 2BF016SV-085 56LSSOP
    Contextual Info: ABW AKKSB fl!M[P ffi MA70@ Kl VS28F016SV, MS28F016SV 16-Mbit (1-Mbit x 16, 2-Mbit x 8 FlashFile MEMORY • Configurable x8 or x16 Operation _ 56-Lead SSOP Plastic Package ■ VS28F016SV 40°C to + 125°C — QML Certified — SE2 Grade ■ Backwards-Compatible with VE28F008


    OCR Scan
    vs28f016svms28f016sv16-mbitvs/ms28f016sv+501bt754ms28f016sv852973722bf016sv-08556lssop PDF

    MS28F016SV85

    Contextual Info: in te i VS28F016SV, MS28F016SV 16-Mbit 1-Mbit x 16, 2-Mbit x 8 FlashFile MEMORY VS28F016SV 40°C to + 125°C — QML Certified — SE2 Grade MS28F016SV 55°C to +125°C — QML Certified — SE1 Grade Smart Voltage Technology — User-Selectable 3.3V or 5V Vcc


    OCR Scan
    vs28f016svms28f016sv16-mbit56-lead+3ve28f008m28f008ms28f016sv85 PDF

    MS3406

    Abstract: 28F016SA 28F016XS M28F008 MS28F016SV VE28F008 intel 27135
    Contextual Info: VS28F016XS MS28F016XS 16-MBIT 1 MBIT x 16 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Y Y Y Y VS28F016XS b 40 C to a 125 C SE2 Grade MS28F016XS b 55 C to 125 C QML Certified SE1 Grade Effective Zero Wait-State Performance up to 25 MHz Synchronous Pipelined Reads


    Original
    vs28f016xsms28f016xs16-mbit56-lead+8ve28f008m28f00828f016sa128-kbytems340628f016xsms28f016svintel 27135 PDF

    BY267

    Abstract: 28F0165V 2dcc 28F016SA M28F008 MS28F016SV VE28F008 VS28F016SV
    Contextual Info: VS28F016SV MS28F016SV 16-Mbit 1-Mbit x 16 2-Mbit x 8 FlashFile TM MEMORY Y Y VS28F016SV b 40 C to a 125 C SE2 Grade MS28F016SV b 55 C to a 125 C QML Certified SE1 Grade Y SmartVoltage Technology User-Selectable 3 3V or 5V VCC User-Selectable 5V or 12V VPP


    Original
    vs28f016svms28f016sv16-mbitve28f008+6m28f008256-byte28f016saby26728f0165v2dcc PDF

    297372

    Abstract: intel 27123 271305
    Contextual Info: AQWADÜK&B ONPOOSDSlAirDOM VS28F016SV, MS28F016SV FlashFile MEMORY • VS28F016SV 40°C to + 125°C — SE2 Grade ■ Configurable x8 or x16 Operation 56-Lead, 0.8mm x 13.5mm SSOP Plastic Package ■ MS28F016SV 55°C to +125°C — QML Certified — SEI Grade


    OCR Scan
    vs28f016svms28f016svvs/ms28f016sv16-mbit+528f016sv28f016sa297372intel 27123271305 PDF

    297372

    Contextual Info: A E > m N l I 0 K 1 F K 1 M A T 0 ® K ] VS28F016XS, MS28F016XS 16-MBIT (1 MBIT x 16,2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to + 125°C — QML Certified — SE2 Grade ■ MS28F016XS 55°C to 125°C — QML Certified — SE1 Grade


    OCR Scan
    vs28f016xsms28f016xs16-mbitvs/ms28f016xs+4vs/ms26f016xsap-39828f016xs297372 PDF