M100FG Search Results

Contextual Info: M25FG M50FG M100FG M160FG 2,500 V - 16,000 V Rectifiers 10 mA - 100 mA Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse

M50FG

Contextual Info: 2,500 V -16,000 V Rectifiers M25FG M50FG M100FG M160FG 10 mA -1 0 0 mA Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number M25FG M50FG M100FG M160FG Working Reverse Voltage Average

M80FG

Contextual Info: M60FG M80FG M100FG HIGH VOLTAGE RECTIFIERS 200nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm .300(7.62) Max. y I = 6000-10000V = 25mA T rr = 200nS 1.00(25.4) Min. .130(3.30) Max. •020±.003 (.50+.08) J ELECTRICAL CHARACTERISTICS AND MAXIMUM RA1"INGS

M100FG

Abstract: M160FG M25FG M50FG
Contextual Info: M25FG M50FG M100FG M160FG 2,500 V - 16,000 V Rectifiers 10 mA - 100 mA Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse

M50FG

Abstract: M100FG M160FG M25FG
Contextual Info: M25FG M50FG M100FG M160FG 2,500 V - 16,000 V Rectifiers 10 mA - 100 mA Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse

X200UFG

Contextual Info: HIGH VOLTAGE RECTIFIERS 100ns-200ns Recovery • Axial Leaded • Hermetic ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current 1 (b) (Vrwm) 55°C 100°C mA mA Volts Reverse Current @ Vrwm Forward Voltage

sharp laser diodes

Abstract: OC100G
Contextual Info: Table of Contents PAGE SURFACE MOUNT MOLDED DIODES 30ns 420mA, 2000V . 08 - 09 70ns 50mA - 250mA, 150mA - 500mA, 2000V - 5000V .

X200SG

Abstract: Z100SG 1N6521U
Contextual Info: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000

1N6532 equivalent

Abstract: 1N6528 M100UFG JX6528 1n6535 jantxv RM117 1N6531 1N6535 1N6530 1N6532
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. INCH-POUND MIL-PRF-19500/577C 6 October 2006 SUPERSEDING MIL-PRF-19500/577B 19 February 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,

1N6528

Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
Contextual Info: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart­

Contextual Info: High Voltage Diodes - Axial Lead 10mA - 100mA • 200ns • Hermetic ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C